JPS6220689B2 - - Google Patents
Info
- Publication number
- JPS6220689B2 JPS6220689B2 JP55041691A JP4169180A JPS6220689B2 JP S6220689 B2 JPS6220689 B2 JP S6220689B2 JP 55041691 A JP55041691 A JP 55041691A JP 4169180 A JP4169180 A JP 4169180A JP S6220689 B2 JPS6220689 B2 JP S6220689B2
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- pattern
- positive photoresist
- film
- diffraction grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Drying Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4169180A JPS56137634A (en) | 1980-03-29 | 1980-03-29 | Pattern forming |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4169180A JPS56137634A (en) | 1980-03-29 | 1980-03-29 | Pattern forming |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56137634A JPS56137634A (en) | 1981-10-27 |
JPS6220689B2 true JPS6220689B2 (enrdf_load_stackoverflow) | 1987-05-08 |
Family
ID=12615442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4169180A Granted JPS56137634A (en) | 1980-03-29 | 1980-03-29 | Pattern forming |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56137634A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2742683B2 (ja) * | 1986-08-08 | 1998-04-22 | 東洋通信機株式会社 | 透過型回折格子の製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5259580A (en) * | 1975-11-11 | 1977-05-17 | Matsushita Electric Ind Co Ltd | Photo etching method |
JPS5389673A (en) * | 1977-01-19 | 1978-08-07 | Oki Electric Ind Co Ltd | Fine pattern forming method of semiconductor device |
-
1980
- 1980-03-29 JP JP4169180A patent/JPS56137634A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS56137634A (en) | 1981-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5741625A (en) | Process for forming fine patterns in a semiconductor device utilizing multiple photosensitive film patterns and organic metal-coupled material | |
US5858591A (en) | Optical proximity correction during wafer processing through subfile bias modification with subsequent subfile merging | |
US4124473A (en) | Fabrication of multi-level relief patterns in a substrate | |
JPS6220689B2 (enrdf_load_stackoverflow) | ||
EP0057268A2 (en) | Method of fabricating X-ray lithographic masks | |
JPH0219970B2 (enrdf_load_stackoverflow) | ||
TWI232495B (en) | Manufacturing method of transfer mask substrate and transfer mask | |
US20050011767A1 (en) | Manufacturing method for a magnetic recording medium stamp and manufacturing apparatus for a magnetic recording medium stamp | |
GB2291982A (en) | Photo masks | |
JPS60230650A (ja) | 微細パタ−ンの製作法 | |
JPH01128522A (ja) | レジストパターンの形成方法 | |
JPS5914888B2 (ja) | パタ−ン形成方法 | |
JPS6033505A (ja) | 回折格子の製造方法 | |
JPH04249311A (ja) | 光リソグラフィーの限界解像度以下の微細パターン形成方法 | |
JPH06105678B2 (ja) | 半導体装置の製造方法 | |
JPS61138257A (ja) | マスク基板 | |
JPH06250007A (ja) | ブレーズド型回折格子の製造方法 | |
JPH0117247B2 (enrdf_load_stackoverflow) | ||
JPS61204933A (ja) | 半導体装置の製造方法 | |
JPS613489A (ja) | 半導体装置の製造方法 | |
JPH07198922A (ja) | 回折格子の作製方法 | |
JPH06283813A (ja) | 回折格子の製造方法 | |
JPH0462451B2 (enrdf_load_stackoverflow) | ||
JPH0471331B2 (enrdf_load_stackoverflow) | ||
JPS61189503A (ja) | 回折格子の製造方法 |