JPS62203371A - 高速半導体装置 - Google Patents

高速半導体装置

Info

Publication number
JPS62203371A
JPS62203371A JP61045362A JP4536286A JPS62203371A JP S62203371 A JPS62203371 A JP S62203371A JP 61045362 A JP61045362 A JP 61045362A JP 4536286 A JP4536286 A JP 4536286A JP S62203371 A JPS62203371 A JP S62203371A
Authority
JP
Japan
Prior art keywords
layer
base
emitter
collector
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61045362A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0431192B2 (https=
Inventor
Kenichi Imamura
健一 今村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61045362A priority Critical patent/JPS62203371A/ja
Publication of JPS62203371A publication Critical patent/JPS62203371A/ja
Publication of JPH0431192B2 publication Critical patent/JPH0431192B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
JP61045362A 1986-03-04 1986-03-04 高速半導体装置 Granted JPS62203371A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61045362A JPS62203371A (ja) 1986-03-04 1986-03-04 高速半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61045362A JPS62203371A (ja) 1986-03-04 1986-03-04 高速半導体装置

Publications (2)

Publication Number Publication Date
JPS62203371A true JPS62203371A (ja) 1987-09-08
JPH0431192B2 JPH0431192B2 (https=) 1992-05-25

Family

ID=12717164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61045362A Granted JPS62203371A (ja) 1986-03-04 1986-03-04 高速半導体装置

Country Status (1)

Country Link
JP (1) JPS62203371A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62299072A (ja) * 1986-06-18 1987-12-26 Sanyo Electric Co Ltd ホツトエレクトロントランジスタ
US5389798A (en) * 1991-10-02 1995-02-14 Mitsubishi Denki Kabushiki Kaisha High-speed semiconductor device with graded collector barrier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62299072A (ja) * 1986-06-18 1987-12-26 Sanyo Electric Co Ltd ホツトエレクトロントランジスタ
US5389798A (en) * 1991-10-02 1995-02-14 Mitsubishi Denki Kabushiki Kaisha High-speed semiconductor device with graded collector barrier

Also Published As

Publication number Publication date
JPH0431192B2 (https=) 1992-05-25

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