JPS62197393A - 液相エピタキシヤル成長方法 - Google Patents
液相エピタキシヤル成長方法Info
- Publication number
- JPS62197393A JPS62197393A JP3750586A JP3750586A JPS62197393A JP S62197393 A JPS62197393 A JP S62197393A JP 3750586 A JP3750586 A JP 3750586A JP 3750586 A JP3750586 A JP 3750586A JP S62197393 A JPS62197393 A JP S62197393A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- jig
- reaction tube
- substrate
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 24
- 239000007791 liquid phase Substances 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 8
- 239000010439 graphite Substances 0.000 claims abstract description 8
- 238000002791 soaking Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000010583 slow cooling Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000002940 repellent Effects 0.000 description 1
- 239000005871 repellent Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3750586A JPS62197393A (ja) | 1986-02-24 | 1986-02-24 | 液相エピタキシヤル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3750586A JPS62197393A (ja) | 1986-02-24 | 1986-02-24 | 液相エピタキシヤル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62197393A true JPS62197393A (ja) | 1987-09-01 |
| JPH0572360B2 JPH0572360B2 (enrdf_load_stackoverflow) | 1993-10-12 |
Family
ID=12499384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3750586A Granted JPS62197393A (ja) | 1986-02-24 | 1986-02-24 | 液相エピタキシヤル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62197393A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100401468C (zh) * | 2005-10-13 | 2008-07-09 | 中国科学院半导体研究所 | 一种键合具有不同热膨胀系数材料的晶片的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582434A (en) * | 1978-12-15 | 1980-06-21 | Fujitsu Ltd | Method of epitaxial growth at liquid phase |
| JPS58168572U (ja) * | 1982-05-06 | 1983-11-10 | 富士通株式会社 | 液相成長装置 |
-
1986
- 1986-02-24 JP JP3750586A patent/JPS62197393A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582434A (en) * | 1978-12-15 | 1980-06-21 | Fujitsu Ltd | Method of epitaxial growth at liquid phase |
| JPS58168572U (ja) * | 1982-05-06 | 1983-11-10 | 富士通株式会社 | 液相成長装置 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100401468C (zh) * | 2005-10-13 | 2008-07-09 | 中国科学院半导体研究所 | 一种键合具有不同热膨胀系数材料的晶片的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0572360B2 (enrdf_load_stackoverflow) | 1993-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |