JPS6219080B2 - - Google Patents
Info
- Publication number
- JPS6219080B2 JPS6219080B2 JP52033377A JP3337777A JPS6219080B2 JP S6219080 B2 JPS6219080 B2 JP S6219080B2 JP 52033377 A JP52033377 A JP 52033377A JP 3337777 A JP3337777 A JP 3337777A JP S6219080 B2 JPS6219080 B2 JP S6219080B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- semiconductor
- junction
- region
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 44
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 230000006798 recombination Effects 0.000 claims description 13
- 238000005215 recombination Methods 0.000 claims description 13
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 10
- 239000000969 carrier Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910007709 ZnTe Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3337777A JPS53118994A (en) | 1977-03-28 | 1977-03-28 | Iso type hetero junction photo electric conversion element and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3337777A JPS53118994A (en) | 1977-03-28 | 1977-03-28 | Iso type hetero junction photo electric conversion element and its manufacture |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56080305A Division JPS5857914B2 (ja) | 1981-05-27 | 1981-05-27 | 光電変換素子の製造方法 |
| JP61237781A Division JPS62188284A (ja) | 1986-10-06 | 1986-10-06 | イソタイプヘテロ接合光・電力変換素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53118994A JPS53118994A (en) | 1978-10-17 |
| JPS6219080B2 true JPS6219080B2 (enExample) | 1987-04-25 |
Family
ID=12384889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3337777A Granted JPS53118994A (en) | 1977-03-28 | 1977-03-28 | Iso type hetero junction photo electric conversion element and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53118994A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5857914B2 (ja) * | 1981-05-27 | 1983-12-22 | 工業技術院長 | 光電変換素子の製造方法 |
| JPS59195531A (ja) * | 1983-04-19 | 1984-11-06 | Agency Of Ind Science & Technol | ＳｎＯ↓２膜連続成長装置 |
-
1977
- 1977-03-28 JP JP3337777A patent/JPS53118994A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53118994A (en) | 1978-10-17 |
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