JPS62190716A - 半導体薄膜結晶層の製造方法 - Google Patents
半導体薄膜結晶層の製造方法Info
- Publication number
- JPS62190716A JPS62190716A JP3179286A JP3179286A JPS62190716A JP S62190716 A JPS62190716 A JP S62190716A JP 3179286 A JP3179286 A JP 3179286A JP 3179286 A JP3179286 A JP 3179286A JP S62190716 A JPS62190716 A JP S62190716A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor thin
- crystal layer
- region
- annealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 239000010409 thin film Substances 0.000 title claims description 26
- 239000013078 crystal Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000010894 electron beam technology Methods 0.000 claims abstract description 27
- 238000013459 approach Methods 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3179286A JPS62190716A (ja) | 1986-02-18 | 1986-02-18 | 半導体薄膜結晶層の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3179286A JPS62190716A (ja) | 1986-02-18 | 1986-02-18 | 半導体薄膜結晶層の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62190716A true JPS62190716A (ja) | 1987-08-20 |
| JPH0354849B2 JPH0354849B2 (cs) | 1991-08-21 |
Family
ID=12340919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3179286A Granted JPS62190716A (ja) | 1986-02-18 | 1986-02-18 | 半導体薄膜結晶層の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62190716A (cs) |
-
1986
- 1986-02-18 JP JP3179286A patent/JPS62190716A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0354849B2 (cs) | 1991-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |