JPS6217866B2 - - Google Patents
Info
- Publication number
- JPS6217866B2 JPS6217866B2 JP56056102A JP5610281A JPS6217866B2 JP S6217866 B2 JPS6217866 B2 JP S6217866B2 JP 56056102 A JP56056102 A JP 56056102A JP 5610281 A JP5610281 A JP 5610281A JP S6217866 B2 JPS6217866 B2 JP S6217866B2
- Authority
- JP
- Japan
- Prior art keywords
- bird
- silicon nitride
- oxide film
- etching
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
- H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56056102A JPS57170548A (en) | 1981-04-13 | 1981-04-13 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56056102A JPS57170548A (en) | 1981-04-13 | 1981-04-13 | Semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57170548A JPS57170548A (en) | 1982-10-20 |
| JPS6217866B2 true JPS6217866B2 (enrdf_load_stackoverflow) | 1987-04-20 |
Family
ID=13017734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56056102A Granted JPS57170548A (en) | 1981-04-13 | 1981-04-13 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57170548A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0231460U (enrdf_load_stackoverflow) * | 1988-08-22 | 1990-02-27 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4663832A (en) * | 1984-06-29 | 1987-05-12 | International Business Machines Corporation | Method for improving the planarity and passivation in a semiconductor isolation trench arrangement |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54128298A (en) * | 1978-03-29 | 1979-10-04 | Hitachi Ltd | Selective oxidizing method |
-
1981
- 1981-04-13 JP JP56056102A patent/JPS57170548A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0231460U (enrdf_load_stackoverflow) * | 1988-08-22 | 1990-02-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57170548A (en) | 1982-10-20 |
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