JPS6217863B2 - - Google Patents

Info

Publication number
JPS6217863B2
JPS6217863B2 JP56014878A JP1487881A JPS6217863B2 JP S6217863 B2 JPS6217863 B2 JP S6217863B2 JP 56014878 A JP56014878 A JP 56014878A JP 1487881 A JP1487881 A JP 1487881A JP S6217863 B2 JPS6217863 B2 JP S6217863B2
Authority
JP
Japan
Prior art keywords
film
silicon dioxide
dioxide film
etching
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56014878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57128944A (en
Inventor
Hiroyuki Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1487881A priority Critical patent/JPS57128944A/ja
Publication of JPS57128944A publication Critical patent/JPS57128944A/ja
Publication of JPS6217863B2 publication Critical patent/JPS6217863B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP1487881A 1981-02-03 1981-02-03 Maufacture of semiconductor device Granted JPS57128944A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1487881A JPS57128944A (en) 1981-02-03 1981-02-03 Maufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1487881A JPS57128944A (en) 1981-02-03 1981-02-03 Maufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57128944A JPS57128944A (en) 1982-08-10
JPS6217863B2 true JPS6217863B2 (enExample) 1987-04-20

Family

ID=11873264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1487881A Granted JPS57128944A (en) 1981-02-03 1981-02-03 Maufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57128944A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4901300B2 (ja) * 2006-05-19 2012-03-21 新電元工業株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032974B2 (ja) * 1977-03-16 1985-07-31 株式会社日立製作所 半導体装置の製造方法
JPS54132177A (en) * 1978-04-05 1979-10-13 Nec Corp Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS57128944A (en) 1982-08-10

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