JPS62177176A - 薄膜形成装置 - Google Patents
薄膜形成装置Info
- Publication number
- JPS62177176A JPS62177176A JP1688986A JP1688986A JPS62177176A JP S62177176 A JPS62177176 A JP S62177176A JP 1688986 A JP1688986 A JP 1688986A JP 1688986 A JP1688986 A JP 1688986A JP S62177176 A JPS62177176 A JP S62177176A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- substrate
- thin film
- deposition
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 150000002500 ions Chemical class 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 238000005468 ion implantation Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 7
- 229910000831 Steel Inorganic materials 0.000 abstract description 6
- 239000010959 steel Substances 0.000 abstract description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 3
- 239000011261 inert gas Substances 0.000 abstract description 2
- 239000007769 metal material Substances 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 238000001704 evaporation Methods 0.000 abstract 2
- 239000002994 raw material Substances 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- -1 argon (Ar) Chemical compound 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1688986A JPS62177176A (ja) | 1986-01-30 | 1986-01-30 | 薄膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1688986A JPS62177176A (ja) | 1986-01-30 | 1986-01-30 | 薄膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62177176A true JPS62177176A (ja) | 1987-08-04 |
| JPH0121226B2 JPH0121226B2 (de) | 1989-04-20 |
Family
ID=11928730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1688986A Granted JPS62177176A (ja) | 1986-01-30 | 1986-01-30 | 薄膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62177176A (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH024967A (ja) * | 1988-02-08 | 1990-01-09 | Optical Coating Lab Inc | 薄膜形成装置及び方法 |
| JPH02175867A (ja) * | 1988-12-27 | 1990-07-09 | Japan Steel Works Ltd:The | 複合イオンビーム照射方法及び照射装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6176665A (ja) * | 1984-09-21 | 1986-04-19 | Nippon Telegr & Teleph Corp <Ntt> | 蒸着膜形成装置 |
-
1986
- 1986-01-30 JP JP1688986A patent/JPS62177176A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6176665A (ja) * | 1984-09-21 | 1986-04-19 | Nippon Telegr & Teleph Corp <Ntt> | 蒸着膜形成装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH024967A (ja) * | 1988-02-08 | 1990-01-09 | Optical Coating Lab Inc | 薄膜形成装置及び方法 |
| JPH02175867A (ja) * | 1988-12-27 | 1990-07-09 | Japan Steel Works Ltd:The | 複合イオンビーム照射方法及び照射装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0121226B2 (de) | 1989-04-20 |
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