JPS62171098U - - Google Patents

Info

Publication number
JPS62171098U
JPS62171098U JP5790986U JP5790986U JPS62171098U JP S62171098 U JPS62171098 U JP S62171098U JP 5790986 U JP5790986 U JP 5790986U JP 5790986 U JP5790986 U JP 5790986U JP S62171098 U JPS62171098 U JP S62171098U
Authority
JP
Japan
Prior art keywords
high voltage
predetermined value
circuit
address data
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5790986U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5790986U priority Critical patent/JPS62171098U/ja
Publication of JPS62171098U publication Critical patent/JPS62171098U/ja
Pending legal-status Critical Current

Links

JP5790986U 1986-04-17 1986-04-17 Pending JPS62171098U (xx)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5790986U JPS62171098U (xx) 1986-04-17 1986-04-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5790986U JPS62171098U (xx) 1986-04-17 1986-04-17

Publications (1)

Publication Number Publication Date
JPS62171098U true JPS62171098U (xx) 1987-10-30

Family

ID=30888032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5790986U Pending JPS62171098U (xx) 1986-04-17 1986-04-17

Country Status (1)

Country Link
JP (1) JPS62171098U (xx)

Similar Documents

Publication Publication Date Title
KR100300166B1 (ko) 비휘발성 반도체 메모리 장치
KR850008023A (ko) 반도체 기억장치
EP0991080A3 (en) Non-volatile semiconductor memory device
JPH0793002B2 (ja) メモリ集積回路
JPS62266793A (ja) 不揮発性半導体記憶装置
EP0083194A3 (en) Electrically erasable programmable read only memory cell having a single transistor
CA1205912A (en) Dual port type semiconductor memory
KR870002589A (ko) 센스증폭기와 프로그래밍회로 각각에 독립으로 칼럼 트랜스퍼 게이트 트랜지스터 그롤을 갖게한 반도체 기억장치
JPS599990B2 (ja) 半導体記憶装置
JPS62171098U (xx)
JPH02301093A (ja) 不揮発性半導体記憶装置
JPH0632213B2 (ja) 半導体メモリ
JPS62154293A (ja) 半導体記憶装置
JPS63247995A (ja) 半導体記憶装置
JPS6031038B2 (ja) 半導体記憶装置
JPH08335396A (ja) 半導体不揮発性記憶装置
JPS6448799U (xx)
JPS6448800U (xx)
JPH05342890A (ja) 半導体記憶装置
EP1628309B1 (en) Method for arranging data in a memory cell array
JPS62107496A (ja) 半導体メモリセル
JPH0589686A (ja) 半導体不揮発性メモリとその書き込み方法
JP2635412B2 (ja) 半導体記憶装置
JPS6029120Y2 (ja) 記憶装置
KR970029824A (ko) 반도체 메모리 셀