JPS62167427U - - Google Patents
Info
- Publication number
- JPS62167427U JPS62167427U JP5485086U JP5485086U JPS62167427U JP S62167427 U JPS62167427 U JP S62167427U JP 5485086 U JP5485086 U JP 5485086U JP 5485086 U JP5485086 U JP 5485086U JP S62167427 U JPS62167427 U JP S62167427U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistors
- gate
- effect transistor
- voltage side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 14
- 230000000295 complement effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
Description
第1図は本考案レベルシフター回路の一実施例
を示す回路図、第2図は従来のレベルシフター回
路の一例を示す回路図である。
FP1,FP2…Pチヤンネル電界効果トラン
ジスタ、FN1,FN2…Nチヤンネル電界効果
トランジスタ、IV1…インバーター、VDP…
出力段振幅電圧、A…ラツチパルス信号端子、B
…レベルシフター出力端子、GD…接地(基準電
位)、C1,C2…コンデンサ。
FIG. 1 is a circuit diagram showing an embodiment of the level shifter circuit of the present invention, and FIG. 2 is a circuit diagram showing an example of a conventional level shifter circuit. FP1, FP2...P channel field effect transistor, FN1, FN2...N channel field effect transistor, IV1...inverter, VDP...
Output stage amplitude voltage, A...Latch pulse signal terminal, B
...Level shifter output terminal, GD...Ground (reference potential), C1, C2...Capacitor.
Claims (1)
接続、および第3および第4の電界効果トランジ
スタの直列接続の各一端に電圧を印加し、各他端
を共通電位に接続し、前記第1および第2の電界
効果トランジスタの接続点および前記第3および
第4の電界効果トランジスタの接続点を、それぞ
れ、前記第3および第4の電界効果トランジスタ
および前記第1および第2の電界効果トランジス
タのうちの各高電圧側の電界効果トランジスタの
ゲートに接続し、前記第1および第2の電界効果
トランジスタおよび前記第3および第4の電界効
果トランジスタのうちの各低電圧側の電界効果ト
ランジスタのゲートに相補的に入力信号を供給し
、前記接続点の少なくとも一方から出力を取り出
すようにしたレベルシフター回路において、前記
接続点の各々を静電容量素子を介して前記高電圧
側の各電界効果トランジスタのゲートに接続した
ことを特徴とするレベルシフター回路。 A voltage is applied to each one end of the series connection of the first and second field effect transistors and the series connection of the third and fourth field effect transistors, and each other end is connected to a common potential, and the first and second field effect transistors are connected in series. The connection point of the second field effect transistor and the connection point of the third and fourth field effect transistors are respectively selected from among the third and fourth field effect transistors and the first and second field effect transistors. connected to the gate of each high voltage side field effect transistor, and complementary to the gate of each low voltage side field effect transistor of the first and second field effect transistors and the third and fourth field effect transistors. In the level shifter circuit, each of the connection points is connected to the gate of each field effect transistor on the high voltage side via a capacitance element. A level shifter circuit characterized in that it is connected to.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5485086U JPS62167427U (en) | 1986-04-14 | 1986-04-14 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5485086U JPS62167427U (en) | 1986-04-14 | 1986-04-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62167427U true JPS62167427U (en) | 1987-10-23 |
Family
ID=30882221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5485086U Pending JPS62167427U (en) | 1986-04-14 | 1986-04-14 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62167427U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01233756A (en) * | 1988-03-14 | 1989-09-19 | Nec Corp | Mos integrated circuit |
-
1986
- 1986-04-14 JP JP5485086U patent/JPS62167427U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01233756A (en) * | 1988-03-14 | 1989-09-19 | Nec Corp | Mos integrated circuit |