JPS62166564A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62166564A
JPS62166564A JP61009584A JP958486A JPS62166564A JP S62166564 A JPS62166564 A JP S62166564A JP 61009584 A JP61009584 A JP 61009584A JP 958486 A JP958486 A JP 958486A JP S62166564 A JPS62166564 A JP S62166564A
Authority
JP
Japan
Prior art keywords
base
collector
electrons
emitter
mini
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61009584A
Other languages
English (en)
Japanese (ja)
Other versions
JPH053749B2 (enrdf_load_stackoverflow
Inventor
Itaru Nakagawa
格 中川
Kimihiro Oota
太田　公廣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61009584A priority Critical patent/JPS62166564A/ja
Publication of JPS62166564A publication Critical patent/JPS62166564A/ja
Publication of JPH053749B2 publication Critical patent/JPH053749B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
JP61009584A 1986-01-20 1986-01-20 半導体装置 Granted JPS62166564A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61009584A JPS62166564A (ja) 1986-01-20 1986-01-20 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61009584A JPS62166564A (ja) 1986-01-20 1986-01-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS62166564A true JPS62166564A (ja) 1987-07-23
JPH053749B2 JPH053749B2 (enrdf_load_stackoverflow) 1993-01-18

Family

ID=11724363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61009584A Granted JPS62166564A (ja) 1986-01-20 1986-01-20 半導体装置

Country Status (1)

Country Link
JP (1) JPS62166564A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989010631A1 (en) * 1988-04-28 1989-11-02 The Secretary Of State For Defence In Her Britanni Hot electron transistors
US5477060A (en) * 1993-06-25 1995-12-19 The United States Of America As Represented By The Secretary Of The Army Infrared hot electron transistor with a superlattice base
JP2007258308A (ja) * 2006-03-22 2007-10-04 Osaka Univ トランジスタ素子及びその製造方法並びに発光素子及びディスプレイ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210679A (ja) * 1985-03-15 1986-09-18 Sony Corp 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210679A (ja) * 1985-03-15 1986-09-18 Sony Corp 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989010631A1 (en) * 1988-04-28 1989-11-02 The Secretary Of State For Defence In Her Britanni Hot electron transistors
US5477060A (en) * 1993-06-25 1995-12-19 The United States Of America As Represented By The Secretary Of The Army Infrared hot electron transistor with a superlattice base
JP2007258308A (ja) * 2006-03-22 2007-10-04 Osaka Univ トランジスタ素子及びその製造方法並びに発光素子及びディスプレイ

Also Published As

Publication number Publication date
JPH053749B2 (enrdf_load_stackoverflow) 1993-01-18

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term