JPS62151562A - 薄膜形成装置 - Google Patents

薄膜形成装置

Info

Publication number
JPS62151562A
JPS62151562A JP29441585A JP29441585A JPS62151562A JP S62151562 A JPS62151562 A JP S62151562A JP 29441585 A JP29441585 A JP 29441585A JP 29441585 A JP29441585 A JP 29441585A JP S62151562 A JPS62151562 A JP S62151562A
Authority
JP
Japan
Prior art keywords
thin film
vessel
vacuum
film forming
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP29441585A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0419301B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Hoshiko
星子　芳寛
Yasunari Goto
康成 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP29441585A priority Critical patent/JPS62151562A/ja
Publication of JPS62151562A publication Critical patent/JPS62151562A/ja
Publication of JPH0419301B2 publication Critical patent/JPH0419301B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP29441585A 1985-12-26 1985-12-26 薄膜形成装置 Granted JPS62151562A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29441585A JPS62151562A (ja) 1985-12-26 1985-12-26 薄膜形成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29441585A JPS62151562A (ja) 1985-12-26 1985-12-26 薄膜形成装置

Publications (2)

Publication Number Publication Date
JPS62151562A true JPS62151562A (ja) 1987-07-06
JPH0419301B2 JPH0419301B2 (enrdf_load_stackoverflow) 1992-03-30

Family

ID=17807455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29441585A Granted JPS62151562A (ja) 1985-12-26 1985-12-26 薄膜形成装置

Country Status (1)

Country Link
JP (1) JPS62151562A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001031693A1 (fr) * 1999-10-26 2001-05-03 Tokyo Electron Limited Procede et appareil destines a surveiller un gaz d'echappement resultant d'un processus, dispositif de fabrication de semi-conducteur, et procede et systeme de gestion d'un dispositif de fabrication de semi-conducteur
DE19844882B4 (de) * 1997-12-30 2007-02-01 Samsung Electronics Co., Ltd., Suwon Vorrichtung zur Plasma-Prozessierung mit In-Situ-Überwachung und In-Situ-Überwachungsverfahren für eine solche Vorrichtung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3595823B2 (ja) * 1994-07-28 2004-12-02 有限会社 渕田ナノ技研 金属部分膜の形成装置およびその形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5246920A (en) * 1975-10-08 1977-04-14 Suwa Seikosha Kk Paper feeder
JPS5931550A (ja) * 1982-08-16 1984-02-20 Ulvac Corp プラズマエツチング中のラジカルおよび励起分子測定装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5246920A (en) * 1975-10-08 1977-04-14 Suwa Seikosha Kk Paper feeder
JPS5931550A (ja) * 1982-08-16 1984-02-20 Ulvac Corp プラズマエツチング中のラジカルおよび励起分子測定装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19844882B4 (de) * 1997-12-30 2007-02-01 Samsung Electronics Co., Ltd., Suwon Vorrichtung zur Plasma-Prozessierung mit In-Situ-Überwachung und In-Situ-Überwachungsverfahren für eine solche Vorrichtung
WO2001031693A1 (fr) * 1999-10-26 2001-05-03 Tokyo Electron Limited Procede et appareil destines a surveiller un gaz d'echappement resultant d'un processus, dispositif de fabrication de semi-conducteur, et procede et systeme de gestion d'un dispositif de fabrication de semi-conducteur
US6716477B1 (en) 1999-10-26 2004-04-06 Tokyo Electron Limited Method and apparatus for monitoring process exhaust gas, semiconductor-manufacturing device and method and system for managing semiconductor-manufacturing device
US6942891B2 (en) 1999-10-26 2005-09-13 Tokyo Electron Limited Device and method for monitoring process exhaust gas, semiconductor manufacturing device, and system and method for controlling semiconductor manufacturing device

Also Published As

Publication number Publication date
JPH0419301B2 (enrdf_load_stackoverflow) 1992-03-30

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