JPS6214954B2 - - Google Patents
Info
- Publication number
- JPS6214954B2 JPS6214954B2 JP55012643A JP1264380A JPS6214954B2 JP S6214954 B2 JPS6214954 B2 JP S6214954B2 JP 55012643 A JP55012643 A JP 55012643A JP 1264380 A JP1264380 A JP 1264380A JP S6214954 B2 JPS6214954 B2 JP S6214954B2
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- power generation
- electrode
- semiconductor layer
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010248 power generation Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 239000007789 gas Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1264380A JPS55124274A (en) | 1980-02-04 | 1980-02-04 | Solar battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1264380A JPS55124274A (en) | 1980-02-04 | 1980-02-04 | Solar battery |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3130579A Division JPS55123177A (en) | 1979-02-09 | 1979-03-16 | Solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55124274A JPS55124274A (en) | 1980-09-25 |
JPS6214954B2 true JPS6214954B2 (uk) | 1987-04-04 |
Family
ID=11811037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1264380A Granted JPS55124274A (en) | 1980-02-04 | 1980-02-04 | Solar battery |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55124274A (uk) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58134482A (ja) * | 1982-02-05 | 1983-08-10 | Agency Of Ind Science & Technol | 光起電力装置 |
JPS6122370U (ja) * | 1984-07-12 | 1986-02-08 | 富士電機株式会社 | 光起電力素子 |
EP0213910B1 (en) | 1985-08-24 | 1994-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device free from the current leakage through a semi-conductor layer |
KR20100076083A (ko) * | 2008-12-17 | 2010-07-06 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3483038A (en) * | 1967-01-05 | 1969-12-09 | Rca Corp | Integrated array of thin-film photovoltaic cells and method of making same |
US3571915A (en) * | 1967-02-17 | 1971-03-23 | Clevite Corp | Method of making an integrated solar cell array |
JPS4911086A (uk) * | 1972-05-26 | 1974-01-31 | ||
JPS5159381A (ja) * | 1974-11-20 | 1976-05-24 | Matsushita Electric Ind Co Ltd | Hyojisochi |
US4042418A (en) * | 1976-08-02 | 1977-08-16 | Westinghouse Electric Corporation | Photovoltaic device and method of making same |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
JPS554994A (en) * | 1978-06-20 | 1980-01-14 | Siemens Ag | Solar battery and method of manufacturing same |
-
1980
- 1980-02-04 JP JP1264380A patent/JPS55124274A/ja active Granted
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3483038A (en) * | 1967-01-05 | 1969-12-09 | Rca Corp | Integrated array of thin-film photovoltaic cells and method of making same |
US3571915A (en) * | 1967-02-17 | 1971-03-23 | Clevite Corp | Method of making an integrated solar cell array |
JPS4911086A (uk) * | 1972-05-26 | 1974-01-31 | ||
JPS5159381A (ja) * | 1974-11-20 | 1976-05-24 | Matsushita Electric Ind Co Ltd | Hyojisochi |
US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
US4042418A (en) * | 1976-08-02 | 1977-08-16 | Westinghouse Electric Corporation | Photovoltaic device and method of making same |
JPS554994A (en) * | 1978-06-20 | 1980-01-14 | Siemens Ag | Solar battery and method of manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
JPS55124274A (en) | 1980-09-25 |
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