JPS62145779A - 電界効果トランジスタ - Google Patents
電界効果トランジスタInfo
- Publication number
- JPS62145779A JPS62145779A JP60286747A JP28674785A JPS62145779A JP S62145779 A JPS62145779 A JP S62145779A JP 60286747 A JP60286747 A JP 60286747A JP 28674785 A JP28674785 A JP 28674785A JP S62145779 A JPS62145779 A JP S62145779A
- Authority
- JP
- Japan
- Prior art keywords
- indium
- layer
- crystal semiconductor
- mixed crystal
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 39
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 21
- 239000012535 impurity Substances 0.000 claims abstract description 21
- -1 aluminum-indium-arsenic Chemical compound 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910052738 indium Inorganic materials 0.000 claims description 22
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 7
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000012808 vapor phase Substances 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 230000004913 activation Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286747A JPS62145779A (ja) | 1985-12-19 | 1985-12-19 | 電界効果トランジスタ |
| US06/939,716 US4764796A (en) | 1985-12-19 | 1986-12-09 | Heterojunction field effect transistor with two-dimensional electron layer |
| EP86117164A EP0228624B1 (en) | 1985-12-19 | 1986-12-09 | field effect transistor |
| DE8686117164T DE3688318T2 (de) | 1985-12-19 | 1986-12-09 | Feldeffekttransistor. |
| CA000525579A CA1247755A (en) | 1985-12-19 | 1986-12-17 | Field effect transistor |
| KR1019860010809A KR900000073B1 (ko) | 1985-12-19 | 1986-12-17 | 전계효과트랜지스터 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60286747A JPS62145779A (ja) | 1985-12-19 | 1985-12-19 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62145779A true JPS62145779A (ja) | 1987-06-29 |
| JPH0328066B2 JPH0328066B2 (enrdf_load_stackoverflow) | 1991-04-17 |
Family
ID=17708507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60286747A Granted JPS62145779A (ja) | 1985-12-19 | 1985-12-19 | 電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62145779A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428237A (ja) * | 1990-05-23 | 1992-01-30 | Sharp Corp | ３―ｖ族化合物半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795672A (en) * | 1980-10-14 | 1982-06-14 | Thomson Csf | Field effect transistor with high breaking frequency |
-
1985
- 1985-12-19 JP JP60286747A patent/JPS62145779A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795672A (en) * | 1980-10-14 | 1982-06-14 | Thomson Csf | Field effect transistor with high breaking frequency |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0428237A (ja) * | 1990-05-23 | 1992-01-30 | Sharp Corp | ３―ｖ族化合物半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0328066B2 (enrdf_load_stackoverflow) | 1991-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |