JPS62144379A - 半導体レ−ザ素子 - Google Patents
半導体レ−ザ素子Info
- Publication number
- JPS62144379A JPS62144379A JP60285958A JP28595885A JPS62144379A JP S62144379 A JPS62144379 A JP S62144379A JP 60285958 A JP60285958 A JP 60285958A JP 28595885 A JP28595885 A JP 28595885A JP S62144379 A JPS62144379 A JP S62144379A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- optical guide
- active layer
- guide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60285958A JPS62144379A (ja) | 1985-12-18 | 1985-12-18 | 半導体レ−ザ素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60285958A JPS62144379A (ja) | 1985-12-18 | 1985-12-18 | 半導体レ−ザ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62144379A true JPS62144379A (ja) | 1987-06-27 |
JPH0446477B2 JPH0446477B2 (de) | 1992-07-30 |
Family
ID=17698156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60285958A Granted JPS62144379A (ja) | 1985-12-18 | 1985-12-18 | 半導体レ−ザ素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62144379A (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02128491A (ja) * | 1988-11-08 | 1990-05-16 | Sharp Corp | 半導体レーザ素子 |
JP2002513215A (ja) * | 1998-04-27 | 2002-05-08 | ウイスコンシン アラムニ リサーチ ファンデーション | 狭スペクトル幅で高出力の分布帰還形半導体レーザ |
-
1985
- 1985-12-18 JP JP60285958A patent/JPS62144379A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02128491A (ja) * | 1988-11-08 | 1990-05-16 | Sharp Corp | 半導体レーザ素子 |
JP2002513215A (ja) * | 1998-04-27 | 2002-05-08 | ウイスコンシン アラムニ リサーチ ファンデーション | 狭スペクトル幅で高出力の分布帰還形半導体レーザ |
Also Published As
Publication number | Publication date |
---|---|
JPH0446477B2 (de) | 1992-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |