JPH0446477B2 - - Google Patents
Info
- Publication number
- JPH0446477B2 JPH0446477B2 JP60285958A JP28595885A JPH0446477B2 JP H0446477 B2 JPH0446477 B2 JP H0446477B2 JP 60285958 A JP60285958 A JP 60285958A JP 28595885 A JP28595885 A JP 28595885A JP H0446477 B2 JPH0446477 B2 JP H0446477B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- active layer
- guide layer
- diffraction grating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 claims description 27
- 230000003287 optical effect Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000004888 barrier function Effects 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005253 cladding Methods 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 239000013078 crystal Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60285958A JPS62144379A (ja) | 1985-12-18 | 1985-12-18 | 半導体レ−ザ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60285958A JPS62144379A (ja) | 1985-12-18 | 1985-12-18 | 半導体レ−ザ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62144379A JPS62144379A (ja) | 1987-06-27 |
| JPH0446477B2 true JPH0446477B2 (de) | 1992-07-30 |
Family
ID=17698156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60285958A Granted JPS62144379A (ja) | 1985-12-18 | 1985-12-18 | 半導体レ−ザ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62144379A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703784B2 (ja) * | 1988-11-08 | 1998-01-26 | シャープ株式会社 | 半導体レーザ素子 |
| US6195381B1 (en) * | 1998-04-27 | 2001-02-27 | Wisconsin Alumni Research Foundation | Narrow spectral width high-power distributed feedback semiconductor lasers |
-
1985
- 1985-12-18 JP JP60285958A patent/JPS62144379A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62144379A (ja) | 1987-06-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |