JPS62141778A - 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法 - Google Patents
絶縁ゲ−ト型電界効果トランジスタ及びその製造方法Info
- Publication number
- JPS62141778A JPS62141778A JP28263785A JP28263785A JPS62141778A JP S62141778 A JPS62141778 A JP S62141778A JP 28263785 A JP28263785 A JP 28263785A JP 28263785 A JP28263785 A JP 28263785A JP S62141778 A JPS62141778 A JP S62141778A
- Authority
- JP
- Japan
- Prior art keywords
- region
- source
- drain
- source region
- insulated gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 230000005669 field effect Effects 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- 101100081489 Drosophila melanogaster Obp83a gene Proteins 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28263785A JPS62141778A (ja) | 1985-12-16 | 1985-12-16 | 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28263785A JPS62141778A (ja) | 1985-12-16 | 1985-12-16 | 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62141778A true JPS62141778A (ja) | 1987-06-25 |
| JPH0457097B2 JPH0457097B2 (enrdf_load_stackoverflow) | 1992-09-10 |
Family
ID=17655108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28263785A Granted JPS62141778A (ja) | 1985-12-16 | 1985-12-16 | 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62141778A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02105469A (ja) * | 1988-10-13 | 1990-04-18 | Nec Corp | Ｍｉｓ型半導体装置 |
| US5712204A (en) * | 1994-12-21 | 1998-01-27 | Nec Corporation | Method of making a semiconductor device having reduced junction capacitance between the source and drain regions and the substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6031278A (ja) * | 1983-08-01 | 1985-02-18 | Hitachi Ltd | Ｍｉｓ型半導体装置及びその製造方法 |
-
1985
- 1985-12-16 JP JP28263785A patent/JPS62141778A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6031278A (ja) * | 1983-08-01 | 1985-02-18 | Hitachi Ltd | Ｍｉｓ型半導体装置及びその製造方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02105469A (ja) * | 1988-10-13 | 1990-04-18 | Nec Corp | Ｍｉｓ型半導体装置 |
| US5712204A (en) * | 1994-12-21 | 1998-01-27 | Nec Corporation | Method of making a semiconductor device having reduced junction capacitance between the source and drain regions and the substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0457097B2 (enrdf_load_stackoverflow) | 1992-09-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |