JPS62141778A - 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法 - Google Patents

絶縁ゲ−ト型電界効果トランジスタ及びその製造方法

Info

Publication number
JPS62141778A
JPS62141778A JP28263785A JP28263785A JPS62141778A JP S62141778 A JPS62141778 A JP S62141778A JP 28263785 A JP28263785 A JP 28263785A JP 28263785 A JP28263785 A JP 28263785A JP S62141778 A JPS62141778 A JP S62141778A
Authority
JP
Japan
Prior art keywords
region
source
drain
source region
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28263785A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0457097B2 (OSRAM
Inventor
Koichi Kishi
宏一 岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP28263785A priority Critical patent/JPS62141778A/ja
Publication of JPS62141778A publication Critical patent/JPS62141778A/ja
Publication of JPH0457097B2 publication Critical patent/JPH0457097B2/ja
Granted legal-status Critical Current

Links

JP28263785A 1985-12-16 1985-12-16 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法 Granted JPS62141778A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28263785A JPS62141778A (ja) 1985-12-16 1985-12-16 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28263785A JPS62141778A (ja) 1985-12-16 1985-12-16 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS62141778A true JPS62141778A (ja) 1987-06-25
JPH0457097B2 JPH0457097B2 (OSRAM) 1992-09-10

Family

ID=17655108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28263785A Granted JPS62141778A (ja) 1985-12-16 1985-12-16 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS62141778A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105469A (ja) * 1988-10-13 1990-04-18 Nec Corp Ｍｉｓ型半導体装置
US5712204A (en) * 1994-12-21 1998-01-27 Nec Corporation Method of making a semiconductor device having reduced junction capacitance between the source and drain regions and the substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031278A (ja) * 1983-08-01 1985-02-18 Hitachi Ltd Ｍｉｓ型半導体装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031278A (ja) * 1983-08-01 1985-02-18 Hitachi Ltd Ｍｉｓ型半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105469A (ja) * 1988-10-13 1990-04-18 Nec Corp Ｍｉｓ型半導体装置
US5712204A (en) * 1994-12-21 1998-01-27 Nec Corporation Method of making a semiconductor device having reduced junction capacitance between the source and drain regions and the substrate

Also Published As

Publication number Publication date
JPH0457097B2 (OSRAM) 1992-09-10

Similar Documents

Publication Publication Date Title
JP3831602B2 (ja) 半導体装置の製造方法
JP2591927B2 (ja) Ｄｒａｍセルの製造方法
JPS63226055A (ja) 半導体集積回路装置及びその製造方法
JPH0818016A (ja) 半導体の製造方法
JPS62141778A (ja) 絶縁ゲ−ト型電界効果トランジスタ及びその製造方法
JPS63217664A (ja) Ｍｉｓｆｅｔ及びその製造方法
JPH0351309B2 (OSRAM)
JP2996694B2 (ja) 半導体スタックトｃｍｏｓ装置の製造方法
JPH0564458B2 (OSRAM)
JP2626532B2 (ja) 半導体装置およびその製造方法
JP2004063918A (ja) 横型ｍｏｓトランジスタ
JP3314341B2 (ja) Ｃ−ｍｏｓゲートアレイ及び基体コンタクトの形成方法
JP3030459B2 (ja) 半導体装置
JPH0541516A (ja) 半導体装置及び製造方法
JPH118388A (ja) Ｍｏｓ型半導体装置の高耐圧ドレイン構造
JP2569454B2 (ja) 縦型電界効果トランジスタの製造方法
JP2982758B2 (ja) 半導体装置及びその製造方法
JPH02105576A (ja) 電界効果トランジスタ
JPH06181312A (ja) 半導体装置及びその製造方法
JPS63115382A (ja) 半導体装置
KR910009742B1 (ko) 고전압 반도체 장치 및 그 제조방법
JPS6136974A (ja) Ｍｏｓ型半導体装置の製造方法
JPH02312244A (ja) 半導体装置の製造方法
JPH08236760A (ja) 半導体装置及びその製造方法
JPH04297066A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term