JPS6214099B2 - - Google Patents

Info

Publication number
JPS6214099B2
JPS6214099B2 JP56127600A JP12760081A JPS6214099B2 JP S6214099 B2 JPS6214099 B2 JP S6214099B2 JP 56127600 A JP56127600 A JP 56127600A JP 12760081 A JP12760081 A JP 12760081A JP S6214099 B2 JPS6214099 B2 JP S6214099B2
Authority
JP
Japan
Prior art keywords
glass
nail
leadless
head
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56127600A
Other languages
Japanese (ja)
Other versions
JPS5828859A (en
Inventor
Naoharu Teguri
Kenji Ishihara
Makoto Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP12760081A priority Critical patent/JPS5828859A/en
Publication of JPS5828859A publication Critical patent/JPS5828859A/en
Publication of JPS6214099B2 publication Critical patent/JPS6214099B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492Bases or plates or solder therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、リードレスガラス封止ダイオードに
関するものである。 最近、電子部品のプリント配線基板への実装の
高速化、高密度化の要求によつて、リード線を有
しない電子部品、いわゆるリードレス部品が脚光
を浴びている。 ダイオードにおいても、外径が2.2mmで、長さ
が5.9mm、あるいは外径が1.4mmで長さが3.5mmの大
きさで、部品の自動供給に有利な円筒形をしたリ
ードレスダイオードが提案されている。 このリードレスダイオードは、基本的にはジユ
メツト材からなる一対の釘形電極、ダイオードチ
ツプ、およびガラス管で構成され、釘形ジユメツ
ト電極の胴部端面同士でダイオードチツプを挾持
し、胴部側面でその表面に設けられた亜酸化銅層
を介してガラス管の内壁と封止し、ガラスの収縮
力を利用して電極でチツプを圧接した構造になつ
ており、一般にリードレスガラス封止ダイオード
と呼ばれている。 ところで、従来提案されているリードレスガラ
ス封止ダイオードは、第1図にその断面図で示し
たように、ガラス4が正規の封止部6すなわち釘
形電極1の胴部2以外に、少なくとも一方の釘形
電極1の電極頭部3の裏面7に、あるいはその裏
面7と側面8に密着または部分的に接着している
のが普通である。 これは、一般に金属の表面に金属の酸化層があ
るとガラスは接着しやすいが、特にジユメツト製
電極の表面に設けられた亜酸化銅層はガラスとき
わめてよくなじむこと、さらにまた通常採用され
ている縦形組立封止方式の場合下側になる釘形ジ
ユメツト電極にガラス管が当接して支持されたま
まで加熱されること等が原因と考えられる。 ところで、このように正規の封止部の他に釘形
電極の頭部にもガラスが接着して二面で固定され
た構造になると、加熱冷却の際にガラスに簡単に
「ひび」が入りやすいという欠点がある。 すなわち、加熱封止加工での冷却の際や、プリ
ント配線基板への実装における半田浴浸漬での加
熱冷却の際に、ガラスの収縮がジユメツト電極の
軸方向の収縮より大きいので、ガラスがジユメツ
ト電極の頭部裏面から離れようとしてガラスに
「ひび」が入るものと考えられる。 この「ひび」は、「割れ」あるいは「気密漏
れ」などの半導体装置としては致命的な欠陥に発
展する可能性がきわめて高いので、この問題を解
決したリードレスガラス封止ダイオードの出現が
強く望まれているのである。 本発明は、リードレスガラス封止ダイオードの
釘形電極の頭部と胴部との連結部に小突起を設け
た構造とすることによつて、上述の問題点を解決
した、耐熱信頼性の高いリードレスガラス封止ダ
イオードを提供しようとするものである。 以下に、本発明の実施例について、図面を用い
て詳しく説明する。 第2図Aは、一対の釘形ジユメツト電極1の頭
部3と胴部2との連結部にアール状小突起5があ
り、ガラス4が一対の釘形ジユメツト電極1の
各々頭部離面7に接着しない構造のリードレスガ
ラス封止ダイオードの断面図であり、同図Bは、
その加熱封止前の組立断面図である。 下電極3に設けたアール状小突起5は、第2図
Bから明らかなように、ガラス管4′の内壁角9
を支持し、下電極3の頭部裏面7にガラスが当接
しないようにガラス管4′を浮かしている。した
がつて、このような状態では、所定の封止温度で
加熱してもガラス4は釘形電極1の頭部3に接着
しない。 このようにして造られたリードレスガラス封止
ダイオードを、封止工程での「ひび割れ」発生
数、および、半田浴浸漬試験(フラツクスに浸漬
後、260℃±5℃の溶融半田槽に10秒間浸漬する
試験)での「ひび割れ」発生数について、従来品
とともに比較したところ、次のような結果を得
て、本発明のリードレスガラス封止ダイオードの
効果を確認した。
The present invention relates to leadless glass-sealed diodes. Recently, electronic components without lead wires, so-called leadless components, have been in the spotlight due to demands for faster and higher density mounting of electronic components on printed wiring boards. Regarding diodes, we have proposed cylindrical leadless diodes with an outer diameter of 2.2 mm and a length of 5.9 mm, or an outer diameter of 1.4 mm and a length of 3.5 mm, which are advantageous for automatic parts supply. has been done. This leadless diode basically consists of a pair of nail-shaped electrodes made of a cement material, a diode chip, and a glass tube. It is sealed with the inner wall of the glass tube through a cuprous oxide layer provided on its surface, and the chip is pressed against the electrode using the contraction force of the glass, and is generally used as a leadless glass-sealed diode. being called. By the way, in the conventionally proposed leadless glass-sealed diode, as shown in the cross-sectional view in FIG. Usually, it is closely or partially adhered to the back surface 7 of the electrode head 3 of one of the nail-shaped electrodes 1, or to the back surface 7 and side surfaces 8 thereof. This is because glass generally tends to adhere easily when there is a metal oxide layer on the surface of metal, but the cuprous oxide layer provided on the surface of the electrode made of aluminum is particularly compatible with glass, and is also commonly used. In the case of the vertical assembly sealing method, the cause is thought to be that the glass tube is heated while it is in contact with and supported by the nail-shaped cement electrode on the lower side. By the way, if the structure is such that the glass is glued to the head of the nail-shaped electrode in addition to the regular sealing part and fixed on two sides, the glass can easily crack during heating and cooling. It has the disadvantage of being easy. In other words, the shrinkage of the glass is greater than the axial shrinkage of the aluminum electrode during cooling during heat sealing or heating and cooling during solder bath immersion during mounting on a printed wiring board. It is thought that the glass cracked as it tried to separate from the back of the head. These "cracks" have a very high possibility of developing into defects such as "breaks" or "hermetic leaks" that are fatal to semiconductor devices, so the emergence of leadless glass-sealed diodes that solve this problem is highly desired. It is because of this. The present invention solves the above-mentioned problems by providing a structure in which a small protrusion is provided at the connecting part between the head and body of the nail-shaped electrode of a leadless glass-sealed diode, and has improved heat resistance and reliability. The present invention aims to provide a highly leadless glass-sealed diode. Embodiments of the present invention will be described in detail below with reference to the drawings. FIG. 2A shows a pair of nail-shaped electrodes 1 each having a rounded small protrusion 5 at the connecting part between the head 3 and body 2, and a glass 4 that separates the head of each of the pair of nail-shaped electrodes 1. 7 is a cross-sectional view of a leadless glass-sealed diode with a structure that is not bonded to
It is an assembled sectional view before heat sealing. As is clear from FIG. 2B, the rounded small protrusion 5 provided on the lower electrode 3 has an inner wall angle 9 of the glass tube 4'.
is supported, and the glass tube 4' is suspended so that the glass does not come into contact with the back surface 7 of the head of the lower electrode 3. Therefore, in such a state, the glass 4 will not adhere to the head 3 of the nail-shaped electrode 1 even if it is heated to a predetermined sealing temperature. The leadless glass-sealed diode manufactured in this way was tested for the number of cracks that occurred during the sealing process, and a solder bath immersion test (after immersed in flux, it was immersed in a molten solder bath at 260°C ± 5°C for 10 seconds. The number of "cracks" generated in the immersion test was compared with that of conventional products, and the following results were obtained, confirming the effectiveness of the leadless glass-sealed diode of the present invention.

【表】 なお、このアール状小突起5は、電極の頭部3
と胴部2との連結部の必らずしも全周囲に設ける
必要はなく、ガラス管内壁角9の一部分が支えら
れれば連結部周囲の一部分に設けるだけでもよ
い。 また、このアール状小突起5の大きさは、あま
り大きすぎると、電極1の寸法が大きくなつた
り、封止部6パスが短くなつたりして、規格や気
密性保証に問題が生じるので、適宜決めてやれば
よい。 この実施例ではアール状小突起を有するリード
レスガラス封止ダイオードについて説明したが、
それ以外にも、たとえば第3図A,Bにそれぞれ
示したようなテーパー状小突起やステツプ状小突
起など、アール状突起と同じような機能をもつも
のであればいずれのものでもよい。なお、第3図
A,Bにおいて、第2図A,Bに示したダイオー
ドの構成要素と対応する要素には同じ符号を付し
ている。 ここで、第3図Bに示したステツプ状突起の場
合、ステツプ面10がガラス端面11と大きな面
接触をもつと、電極1の頭部裏面7にガラスが直
接接着したときと同様な構造となり、やはり「ひ
び」の入りやすい状態となるので注意を要する。 以上説明したように、本発明のリードレスガラ
ス封止ダイオードは、釘形電極の頭部と胴部との
連結部に小突起を設けて釘形電極の頭部にガラス
が接着するのを阻止したので、加熱封止工程での
冷却時やプリント板実装における半田浴浸漬での
加熱冷却の際に、釘形電極とガラスとの間に熱膨
張による収縮差が生じても、「ひび」の発生する
ことがなく、したがつて「割れ」や「気密漏れ」
のない耐熱信頼性の高い半導体装置となつてい
る。 また、本発明のリードレスガラス封止ダイオー
ドは、ガラスが釘形電極に部分的に接着している
場合に起りがちだつた半田浴浸漬でのフラツクス
の残留も生じないので、正規の封止部が次第に侵
食されて気密性の劣化に発展するというおそれも
ない。 また、本発明のリードレスガラス封止ダイオー
ドは、従来とかくガラスが釘形電極の頭部側面に
まで被つて側面の半田付面積が狭くなるといつた
点も改善され、プリント板回路との接続にも好ま
しい結果をもたらす。 この他、従来は主に抵抗やコンデンサ等の受動
部品を中心に展開されていたリードレス部品のプ
リント板実装も、本発明の信頼性の高いリードレ
スガラス封止ダイオードを使用することにより、
受動・能動の混成部品からなるプリント板実装を
促進できるなど、本発明の効果は非常に大きい。
[Table] Note that this rounded small protrusion 5 is located at the head 3 of the electrode.
It is not necessary to provide it all around the connecting portion between the body 2 and the body 2, and it may be provided only around a portion of the connecting portion as long as a portion of the inner wall corner 9 of the glass tube can be supported. In addition, if the size of the rounded small protrusion 5 is too large, the dimensions of the electrode 1 will increase or the path of the sealing part 6 will become short, causing problems with standards and airtightness guarantees. You just have to decide accordingly. In this example, a leadless glass-sealed diode with rounded small protrusions was explained.
In addition, any other material may be used as long as it has the same function as a rounded projection, such as a tapered small projection or a stepped small projection as shown in FIGS. 3A and 3B, respectively. In addition, in FIGS. 3A and 3B, elements corresponding to those of the diode shown in FIGS. 2A and 2B are given the same reference numerals. In the case of the step-shaped protrusion shown in FIG. 3B, if the step surface 10 has a large surface contact with the glass end surface 11, the structure will be similar to that when the glass is directly bonded to the back surface 7 of the head of the electrode 1. , it is still prone to "cracks" so care must be taken. As explained above, in the leadless glass-sealed diode of the present invention, a small protrusion is provided at the connecting portion between the head and body of the nail-shaped electrode to prevent glass from adhering to the head of the nail-shaped electrode. Therefore, even if there is a contraction difference due to thermal expansion between the nail-shaped electrode and the glass during cooling during the heat sealing process or during heating and cooling during solder bath immersion during printed board mounting, "cracks" will not occur. Therefore, "cracks" and "airtight leaks" will not occur.
It has become a highly reliable semiconductor device with no heat resistance. In addition, the leadless glass-sealed diode of the present invention does not cause residual flux when immersed in a solder bath, which tends to occur when the glass is partially adhered to the nail-shaped electrode, so that the regular sealing part cannot be removed. There is no fear that the airtightness will deteriorate due to gradual erosion. In addition, the leadless glass-sealed diode of the present invention has an improvement in the conventional problem that the glass covers the head side of the nail-shaped electrode, reducing the soldering area on the side, making it easier to connect to a printed circuit board. also yields favorable results. In addition, by using the highly reliable leadless glass-sealed diode of the present invention, printed board mounting of leadless components, which had conventionally been developed mainly around passive components such as resistors and capacitors, can be realized.
The effects of the present invention are very large, such as facilitating the mounting of printed circuit boards consisting of passive and active hybrid components.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来のリードレスガラス封止ダイオ
ードの一例を示す断面図である。第2図は本発明
にかかる一実施例のリードレスガラス封止ダイオ
ードの断面図で、図Aは封止後の状態、図Bは封
止前の状態を示す。第3図A,Bはそれぞれ本発
明の他の実施例の封止前における要部断面図であ
る。 1……釘形電極、2……釘形電極の胴部、3…
…釘形電極の頭部、4……ガラス、4′………ガ
ラス管、5……小突起、6……封止部、7……釘
形電極の頭部裏面、8……釘形電極の頭部側面。
FIG. 1 is a cross-sectional view showing an example of a conventional leadless glass-sealed diode. FIG. 2 is a cross-sectional view of a leadless glass-sealed diode according to an embodiment of the present invention, where FIG. A shows the state after sealing and FIG. B shows the state before sealing. 3A and 3B are sectional views of main parts of other embodiments of the present invention before sealing, respectively. 1... Nail-shaped electrode, 2... Body of the nail-shaped electrode, 3...
...Head of nail-shaped electrode, 4...Glass, 4'...Glass tube, 5...Small protrusion, 6...Sealing part, 7...Back side of head of nail-shaped electrode, 8...Nail-shaped Electrode head side.

Claims (1)

【特許請求の範囲】[Claims] 1 ダイオードチツプが一対の釘形電極の胴部先
端で圧接挾持され、かつ前記釘形電極の胴部側面
に接着されたガラスによつて前記ダイオードチツ
プが封止されているダイオードであつて、前記釘
形電極がその頭部と胴部との連結部に小突起を有
していることを特徴とするリードレスガラス封止
ダイオード。
1. A diode in which a diode chip is press-fitted and clamped at the tips of bodies of a pair of nail-shaped electrodes, and the diode chip is sealed with glass bonded to the sides of the bodies of the nail-shaped electrodes, A leadless glass-sealed diode characterized in that the nail-shaped electrode has a small protrusion at the connecting portion between the head and the body.
JP12760081A 1981-08-13 1981-08-13 Leadless glass sealing diode Granted JPS5828859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12760081A JPS5828859A (en) 1981-08-13 1981-08-13 Leadless glass sealing diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12760081A JPS5828859A (en) 1981-08-13 1981-08-13 Leadless glass sealing diode

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP20419686A Division JPS62142336A (en) 1986-08-29 1986-08-29 Leadless glass sealed diode

Publications (2)

Publication Number Publication Date
JPS5828859A JPS5828859A (en) 1983-02-19
JPS6214099B2 true JPS6214099B2 (en) 1987-03-31

Family

ID=14964090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12760081A Granted JPS5828859A (en) 1981-08-13 1981-08-13 Leadless glass sealing diode

Country Status (1)

Country Link
JP (1) JPS5828859A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5869953U (en) * 1981-11-02 1983-05-12 日本電気株式会社 semiconductor equipment
JPS5883154U (en) * 1981-11-30 1983-06-06 日本電気ホームエレクトロニクス株式会社 electronic components
JPS5943558A (en) * 1982-09-02 1984-03-10 Sumitomo Electric Ind Ltd Diode electrode part
JPS6071148U (en) * 1983-10-24 1985-05-20 ローム株式会社 diode
JPH0442933Y2 (en) * 1986-04-30 1992-10-12
JPH0442932Y2 (en) * 1986-04-30 1992-10-12

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022575A (en) * 1973-06-26 1975-03-11
JPS5534683B2 (en) * 1976-06-15 1980-09-09

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843235Y2 (en) * 1978-08-28 1983-09-30 日本電気ホームエレクトロニクス株式会社 DHD type diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5022575A (en) * 1973-06-26 1975-03-11
JPS5534683B2 (en) * 1976-06-15 1980-09-09

Also Published As

Publication number Publication date
JPS5828859A (en) 1983-02-19

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