JPS62136564A - スパツタリングタ−ゲツト - Google Patents

スパツタリングタ−ゲツト

Info

Publication number
JPS62136564A
JPS62136564A JP27754385A JP27754385A JPS62136564A JP S62136564 A JPS62136564 A JP S62136564A JP 27754385 A JP27754385 A JP 27754385A JP 27754385 A JP27754385 A JP 27754385A JP S62136564 A JPS62136564 A JP S62136564A
Authority
JP
Japan
Prior art keywords
target
pieces
cathode electrode
solder
piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27754385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6246631B2 (enrdf_load_stackoverflow
Inventor
Shigeki Sugimoto
茂樹 杉本
Kunihiro Mori
森　邦弘
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP27754385A priority Critical patent/JPS62136564A/ja
Publication of JPS62136564A publication Critical patent/JPS62136564A/ja
Publication of JPS6246631B2 publication Critical patent/JPS6246631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP27754385A 1985-12-10 1985-12-10 スパツタリングタ−ゲツト Granted JPS62136564A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27754385A JPS62136564A (ja) 1985-12-10 1985-12-10 スパツタリングタ−ゲツト

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27754385A JPS62136564A (ja) 1985-12-10 1985-12-10 スパツタリングタ−ゲツト

Publications (2)

Publication Number Publication Date
JPS62136564A true JPS62136564A (ja) 1987-06-19
JPS6246631B2 JPS6246631B2 (enrdf_load_stackoverflow) 1987-10-02

Family

ID=17585009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27754385A Granted JPS62136564A (ja) 1985-12-10 1985-12-10 スパツタリングタ−ゲツト

Country Status (1)

Country Link
JP (1) JPS62136564A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970033327A (ko) * 1995-12-28 1997-07-22 김익명 인듐 주석 산화물 타켓의 제조 방법
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970033327A (ko) * 1995-12-28 1997-07-22 김익명 인듐 주석 산화물 타켓의 제조 방법
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles

Also Published As

Publication number Publication date
JPS6246631B2 (enrdf_load_stackoverflow) 1987-10-02

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees