JPS62136564A - スパツタリングタ−ゲツト - Google Patents
スパツタリングタ−ゲツトInfo
- Publication number
- JPS62136564A JPS62136564A JP27754385A JP27754385A JPS62136564A JP S62136564 A JPS62136564 A JP S62136564A JP 27754385 A JP27754385 A JP 27754385A JP 27754385 A JP27754385 A JP 27754385A JP S62136564 A JPS62136564 A JP S62136564A
- Authority
- JP
- Japan
- Prior art keywords
- target
- pieces
- cathode electrode
- solder
- piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 22
- 239000000853 adhesive Substances 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 13
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 239000011733 molybdenum Substances 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27754385A JPS62136564A (ja) | 1985-12-10 | 1985-12-10 | スパツタリングタ−ゲツト |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27754385A JPS62136564A (ja) | 1985-12-10 | 1985-12-10 | スパツタリングタ−ゲツト |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62136564A true JPS62136564A (ja) | 1987-06-19 |
| JPS6246631B2 JPS6246631B2 (enrdf_load_stackoverflow) | 1987-10-02 |
Family
ID=17585009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27754385A Granted JPS62136564A (ja) | 1985-12-10 | 1985-12-10 | スパツタリングタ−ゲツト |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62136564A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970033327A (ko) * | 1995-12-28 | 1997-07-22 | 김익명 | 인듐 주석 산화물 타켓의 제조 방법 |
| US7652223B2 (en) * | 2005-06-13 | 2010-01-26 | Applied Materials, Inc. | Electron beam welding of sputtering target tiles |
-
1985
- 1985-12-10 JP JP27754385A patent/JPS62136564A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970033327A (ko) * | 1995-12-28 | 1997-07-22 | 김익명 | 인듐 주석 산화물 타켓의 제조 방법 |
| US7652223B2 (en) * | 2005-06-13 | 2010-01-26 | Applied Materials, Inc. | Electron beam welding of sputtering target tiles |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6246631B2 (enrdf_load_stackoverflow) | 1987-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4966676A (en) | Sputtering target | |
| EP0124075B1 (en) | Sputtering target supporting device | |
| JP2962912B2 (ja) | 陰極スパッタリング装置で基板を被覆するためのスパッタカソード | |
| JPS5920470A (ja) | スパツタリング用タ−ゲツト | |
| JPS62136564A (ja) | スパツタリングタ−ゲツト | |
| JPS63143258A (ja) | スパツタリング用タ−ゲツト | |
| JPH04333565A (ja) | スパッタリングターゲットおよびその製造方法 | |
| JP2588241B2 (ja) | スパッタリングターゲット | |
| JPS59179783A (ja) | スパツタリングタ−ゲツト | |
| KR20230081324A (ko) | 스퍼터링 장치 및 세라믹 적층체의 외부전극 형성방법 | |
| JPS63100177A (ja) | スパツタリング用タ−ゲツト | |
| JPH0774440B2 (ja) | イオンビ−ムスパツタ装置 | |
| JPS58100679A (ja) | 高融点金属とケイ素とからなるマグネトロンスパッタ用分割タ−ゲット | |
| JPS63227774A (ja) | スパツタリング用タ−ゲツト | |
| JPH0474861A (ja) | プレーナマグネトロンスパッタ装置 | |
| JPS59200763A (ja) | スパツタリング装置 | |
| JPS60194069A (ja) | スパツタタ−ゲツト及びスパツタリング方法 | |
| JPS62243762A (ja) | スパツタリングタ−ゲツト用バツキングプレ−ト | |
| JPS59121627A (ja) | 磁気円板 | |
| JPS6260864A (ja) | スパツタリングタ−ゲツト | |
| JPS609873A (ja) | スパツタ用タ−ゲツトの固定方法 | |
| JPS6179768A (ja) | スパツタ方法 | |
| JPS61291968A (ja) | スパツタリング用タ−ゲツト | |
| JPS61130480A (ja) | 蒸着用マスク | |
| JPH0273973A (ja) | スパッタリング装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |