JPS62136564A - Sputtering target - Google Patents

Sputtering target

Info

Publication number
JPS62136564A
JPS62136564A JP27754385A JP27754385A JPS62136564A JP S62136564 A JPS62136564 A JP S62136564A JP 27754385 A JP27754385 A JP 27754385A JP 27754385 A JP27754385 A JP 27754385A JP S62136564 A JPS62136564 A JP S62136564A
Authority
JP
Japan
Prior art keywords
target
pieces
cathode electrode
solder
piece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27754385A
Other languages
Japanese (ja)
Other versions
JPS6246631B2 (en
Inventor
Shigeki Sugimoto
茂樹 杉本
Kunihiro Mori
森 邦弘
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP27754385A priority Critical patent/JPS62136564A/en
Publication of JPS62136564A publication Critical patent/JPS62136564A/en
Publication of JPS6246631B2 publication Critical patent/JPS6246631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3414Targets
    • H01J37/3426Material
    • H01J37/3429Plural materials

Abstract

PURPOSE:To prevent solder for adhesion from being sucked up between divided target pieces and to improve the cooling efficiency for a target body by chambering the end faces of said pieces intersecting with the adhesive surfaces to a cathode electrode. CONSTITUTION:The target pieces 14 which are divided to plural pieces are arrayed on the cathode electrode 11 in such a manner that the side faces thereof contact each other. The end faces of the pieces 14 where the adhesive surfaces to the electrode 11 and side faces intersect are chamfered 15 prior to the arraying. The pieces 14 and the electrode 11 are then adhered by the solder 13 for adhesion.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、スパッタリングターゲットに関し、特に複数
個に分割したターゲット片をカソード電極上に接着した
構造のスパッタリングターゲットの改良に係わる。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a sputtering target, and more particularly to an improvement in a sputtering target having a structure in which a plurality of divided target pieces are adhered onto a cathode electrode.

〔発明の技術的背景とその問題点3 合金膜の形成技術としては、スパッタリング技術が知ら
れている。こうしたスパッタリング技術において、モリ
ブデンとシリコンのように予め化学量論から外れる組成
比で均一な成分のターゲット本体を作製するのが困難な
場合には、複数個に分割されたターゲット片が使用され
ている。
[Technical background of the invention and its problems 3 Sputtering technology is known as a technology for forming alloy films. In these sputtering techniques, target pieces divided into multiple pieces are used when it is difficult to create a target body with uniform components in a composition ratio that deviates from stoichiometry, such as molybdenum and silicon. .

上記ターゲット片を組合わせたターゲット本体を有する
ターゲットとしては、従来より例えば第7因に示すよう
に複数個の楔形のシリコン片1aとモリブデン片1bと
を交互に組合わせて円板状とした、いわゆるモザイク状
ターゲット本体2を用い、このターゲット本体2を第8
図に示すようにカソード電極3上に配置し、中心部と外
周部とをネジ4a、4bを有する止め金具5a、5bに
より固定した構造のものが知られている。また、直方体
のシリコン片とモリブデン片とを交互に組合わせてモザ
イク状ターゲット本体をし、このターゲット本体を同様
にカソードN極上に冶具により固定したターゲットも知
られている。しかしながら、第8図に示す構造のターゲ
ットではターゲット本体2とカソード電極3との固定を
ネジ3a、3b及び止め金具4a、4bによるネジ止め
方式を採用しているため、ターゲット本体2の冷却効率
が低く、しかも各シリコン片1a及びモリブデン片1b
のカソード電極3に対する接触インピーダンスが不揃い
となり、スパッタリングの不均一化、組成比のばらつき
を招く欠点があった。
Conventionally, as a target having a target body made of a combination of the target pieces, for example, as shown in the seventh factor, a plurality of wedge-shaped silicon pieces 1a and molybdenum pieces 1b are alternately combined to form a disk shape. A so-called mosaic target body 2 is used, and this target body 2 is
As shown in the figure, a structure is known in which the electrode is placed on the cathode electrode 3 and fixed at the center and outer periphery with fasteners 5a and 5b having screws 4a and 4b. Also known is a target in which rectangular parallelepiped silicon pieces and molybdenum pieces are alternately combined to form a mosaic target body, and this target body is similarly fixed onto the cathode N pole using a jig. However, in the target having the structure shown in FIG. 8, the target body 2 and the cathode electrode 3 are fixed using screws 3a, 3b and fasteners 4a, 4b, so the cooling efficiency of the target body 2 is reduced. Low and each silicon piece 1a and molybdenum piece 1b
The contact impedance with respect to the cathode electrode 3 becomes uneven, resulting in non-uniform sputtering and variations in composition ratio.

このようなことから、第9図に示すように複数個の分割
したターゲット片1からなるターゲット本体2をカソー
ド電極3上に半田6を介して固定することが考えられて
いる。しかしながら、各ターゲット片1は非常に滑らか
に作られているため、溶融した半田6でターゲット本体
2とカソード電極3とを接着すると、同第9図に示すよ
うに半田6が表面張力により隣接するターゲット片1.
1間の側面から表面側に吸い上げられる。こうしたター
ゲットを用いて膜堆積を行なうと、ターゲット本体2表
面に吸い上げられた半田6も同時にスパッタリングされ
るため、膜中に半田が不純物として混入し、膜の純度を
著しく低下させる問題が起こる。
For this reason, it has been considered to fix a target body 2 made up of a plurality of divided target pieces 1 onto a cathode electrode 3 via solder 6, as shown in FIG. However, since each target piece 1 is made very smoothly, when the target body 2 and the cathode electrode 3 are bonded together with molten solder 6, the solder 6 becomes adjacent due to surface tension as shown in FIG. Target piece 1.
It is sucked up from the side of the room to the surface. When film deposition is performed using such a target, the solder 6 sucked up to the surface of the target body 2 is also sputtered at the same time, resulting in the problem that the solder is mixed into the film as an impurity and the purity of the film is significantly reduced.

〔発明の目的〕[Purpose of the invention]

本発明は、ターゲット本体をカソード電極上に半田等の
溶融金属、溶融合金により接着、固定する際、該本体を
構成する隣接したターゲット片の間から半田等が表面張
力により該本体表面側に吸い上げられるのを防止したス
パッタリングターゲットを提供しようとするものである
In the present invention, when a target body is bonded and fixed onto a cathode electrode with molten metal such as solder or molten alloy, the solder etc. is sucked up to the surface side of the body from between adjacent target pieces constituting the body due to surface tension. The purpose of the present invention is to provide a sputtering target that is prevented from being damaged.

(発明の概要〕 本発明は、複数個に分割されたターゲット片をカソード
電極上にそれら側面が互いに接触するように並べ、溶融
金属又は溶融合金により各ターゲット片とカソード電極
とを接着した構造のスパッタリングターゲットにおいて
、前記各ターゲット片におけるカソード電極との接着面
と側面とが交差する端部の少なくとも一方に面取り加工
を施したことを特徴とするものである。かかる本発明に
よれば、既述の如くターゲット本体をカソード電極上に
半田等の溶融金属、溶融合金により接着、固定する際、
該本体を構成する隣接したターゲット片の間から半田等
が表面張力により該本体表面側に吸い上げられるのを防
止でき、半田等の不純物の混入のない高純度の膜堆積が
可能なスパッタリングターゲットを得ることができる。
(Summary of the Invention) The present invention has a structure in which target pieces divided into a plurality of pieces are arranged on a cathode electrode so that their side surfaces are in contact with each other, and each target piece and the cathode electrode are bonded with molten metal or molten alloy. The sputtering target is characterized in that at least one of the ends of each of the target pieces where the adhesive surface with the cathode electrode intersects with the side surface is chamfered.According to the present invention, as described above, When bonding and fixing the target body onto the cathode electrode with molten metal such as solder or molten alloy, as in
To obtain a sputtering target which can prevent solder etc. from being sucked up to the surface side of the main body due to surface tension between adjacent target pieces constituting the main body, and can deposit a high-purity film without contamination with impurities such as solder. be able to.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を第1図〜第3図を参照して詳細
に説明する。
Embodiments of the present invention will be described in detail below with reference to FIGS. 1 to 3.

図中の11は、円板状のカソード電極であり、このカソ
ード電極11上には第3図に示すように円板形をなすモ
ザイク状ターゲット本体12が半田13を介して接着、
固定されている。前記ターゲット本体12は、第2図に
示す平面が扇形状をなす横形のシリコン片14aとモリ
ブデン片14bを交互に隣接する側面が接触すように配
置することにより構成されている。また、前記各シリコ
ン片14a1モリブデン片14bは同第2図に示すよう
にカソード電極11との接着面と側面とが交差する両端
部に平面的な面取り部15.15が形成されている。
11 in the figure is a disk-shaped cathode electrode, and on this cathode electrode 11, as shown in FIG.
Fixed. The target main body 12 is constructed by alternately arranging horizontal silicon pieces 14a and molybdenum pieces 14b, each having a fan-shaped plane as shown in FIG. 2, so that their adjacent side surfaces are in contact with each other. Further, as shown in FIG. 2, each of the silicon pieces 14a and the molybdenum pieces 14b has planar chamfered portions 15.15 formed at both ends where the adhesive surface with the cathode electrode 11 intersects with the side surface.

このようにターゲット本体12を構成する各シリコン片
14a1モリブデン片14bを第2図に示すようにカソ
ード電極11との接着面と側面とが交差する両端部に平
面的な面取り部15.15を形成した構造にすることに
よって、ターゲット本体12をカソード電極11上に半
田13を介して接着した場合、第3図に示すように半田
13が前記面取り部15.15により形成される空間内
に溜まり、シリコン片14aとモリブデン片14bの間
を通ってターゲット本体12上に吸い上げられるのを防
止できる。従って、かかるターゲットを用いて膜堆積を
行なった場合、ターゲット本体12表面への半田13の
吸い上りがないため、膜中に半田が不純物として混入す
ることなく、高純度のモリブテンシリサイド膜を堆積で
きる。
As shown in FIG. 2, each silicon piece 14a1 and molybdenum piece 14b constituting the target body 12 is formed with planar chamfered portions 15.15 at both ends where the adhesive surface with the cathode electrode 11 and the side surface intersect. With this structure, when the target body 12 is bonded onto the cathode electrode 11 via the solder 13, the solder 13 accumulates in the space formed by the chamfered portion 15.15, as shown in FIG. It is possible to prevent the particles from passing between the silicon pieces 14a and the molybdenum pieces 14b and being sucked up onto the target body 12. Therefore, when film deposition is performed using such a target, the solder 13 does not wick up onto the surface of the target body 12, so that a high purity molybdenum silicide film can be deposited without solder being mixed into the film as an impurity. .

また、ターゲット本体12は、カソード電極11に半田
13により接着、固定されているため、ターゲット本体
12の冷却効率を向上でき、しかも各シリコン片14a
、各モリブデン片14bのカソード電極11への接触イ
ンピーダンスが均一となり、スパッタリングの均一化に
より所定の組成比を有するモリブデンシリサイド膜を堆
積できる。
Further, since the target body 12 is bonded and fixed to the cathode electrode 11 with solder 13, the cooling efficiency of the target body 12 can be improved, and each silicon piece 14a
The contact impedance of each molybdenum piece 14b to the cathode electrode 11 becomes uniform, and a molybdenum silicide film having a predetermined composition ratio can be deposited by uniform sputtering.

なお、上記実施例ではターゲット片への面取り加工をカ
ソード電極との接着面と側面とが交差する両端部に施し
たが、第4図に示すようにカソード電極11との接着面
と側面とが交差する一方の端部に平面的な面取り部15
を形成したシリコン片14a1モリブデン片14b(こ
こではシリコン片14aへの面取り部は示していない)
を用いても実施例と同様な効果を達成できる。また、第
5図に示すようにシリコン片14a、モリブデン片14
bに丸みを付けた面取り部15′を形成してもよい。
In the above embodiment, the target piece was chamfered at both ends where the side surface and the surface to be bonded to the cathode electrode intersect, but as shown in FIG. A flat chamfered portion 15 at one end where it intersects.
Silicon piece 14a1 formed with molybdenum piece 14b (chamfered portion to silicon piece 14a is not shown here)
It is also possible to achieve the same effect as in the embodiment by using . Further, as shown in FIG. 5, a silicon piece 14a, a molybdenum piece 14
A rounded chamfered portion 15' may be formed at b.

上記実施例では、平面が扇状をなす横形のターゲット片
を用いたが、第6図に示すように直方体のターゲット片
14を用いてもよい。
In the above embodiment, a horizontal target piece with a fan-shaped plane was used, but a rectangular parallelepiped target piece 14 may also be used as shown in FIG.

上記実施例では、ターゲット片としてシリコンとモリブ
デンからなる2種のものを用いたが、他の組合わせ、例
えばシリコンとタングステン、シリコンとタンタル等の
ターゲット片を使用してもよい。
In the above embodiment, two kinds of target pieces made of silicon and molybdenum were used, but other combinations of target pieces, such as silicon and tungsten, silicon and tantalum, etc., may be used.

上記実施例ではカソード電極とターゲット本体との接着
を半田により行なったが、他の溶融合金、溶融金属で接
着してもよい。
In the above embodiments, the cathode electrode and the target body are bonded by solder, but they may be bonded by other molten alloys or molten metals.

〔発明の効果〕〔Effect of the invention〕

以上詳述した如く、本発明によればターゲット本体をカ
ソード電極上に半田等の溶融金属、溶融合金により接着
、固定する際、該本体を構成する隣接したターゲット片
の間から半田等が表面張力により該本体表面側に吸い上
げられるのを防止し、ひいてはターゲット本体の冷却効
率の向上、各ターゲット片とカソード電極との接触イン
ピーダンスの改善はもとより接着合金等の混入のない高
純度の膜堆積を達成し得るスパッタリングターゲットを
提供できる。
As described in detail above, according to the present invention, when a target body is bonded and fixed onto a cathode electrode with molten metal such as solder or molten alloy, the solder or the like is applied between adjacent target pieces constituting the body due to surface tension. This prevents the target from being sucked up to the surface of the main body, which in turn improves the cooling efficiency of the target main body, improves the contact impedance between each target piece and the cathode electrode, and achieves high-purity film deposition without contamination with adhesive alloys, etc. A sputtering target that can be used can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示すターゲットの図は本発
明の他の実施例を示すターゲットの断面図、第6図は本
発明の更に他の実施例を示すターゲット片の斜視図、第
7図は円板形のモザイク状ターゲット本体を示す斜視図
、第8図は従来のネジ止め方式により第7図図示のター
ゲット本体をカソード電極に固定したターゲットを示す
斜視図、第9図は従来の半田によるターゲット本体とカ
ソード電極とを接着、固定したターゲットを示す断面図
である。 11・・・カソード電極、12・・・モザイク状ターゲ
ット本体、13・・・半田、14a・・・シリコン片、
14b・・・モリブテン片、14・・・ターゲット片、
15.15′・・・面取り部。 出願人代理人 弁理士 鈴江武彦 第2図 第3図 第4図 第5図 第6図 第7図 第9図
FIG. 1 is a cross-sectional view of a target showing another embodiment of the present invention, and FIG. 6 is a perspective view of a target piece showing still another embodiment of the present invention. FIG. 7 is a perspective view showing a disk-shaped mosaic target body, FIG. 8 is a perspective view showing a target in which the target body shown in FIG. 7 is fixed to a cathode electrode using a conventional screw fastening method, and FIG. FIG. 2 is a cross-sectional view showing a target in which a target body and a cathode electrode are bonded and fixed using conventional solder. 11... Cathode electrode, 12... Mosaic target body, 13... Solder, 14a... Silicon piece,
14b...Molybdenum piece, 14...Target piece,
15.15'... Chamfered part. Applicant's Representative Patent Attorney Takehiko Suzue Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 9

Claims (1)

【特許請求の範囲】[Claims] 複数個に分割されたターゲット片をカソード電極上にそ
れら側面が互いに接触するように並べ、溶融金属又は溶
融合金により各ターゲット片とカソード電極とを接着し
た構造のスパッタリングターゲットにおいて、前記各タ
ーゲット片におけるカソード電極との接着面と側面とが
交差する端部の少なくとも一方に面取り加工を施したこ
とを特徴とするスパッタリングターゲット。
In a sputtering target having a structure in which target pieces divided into a plurality of pieces are arranged on a cathode electrode so that their side surfaces are in contact with each other, and each target piece and the cathode electrode are bonded to each other with molten metal or molten alloy, in each target piece. A sputtering target characterized by chamfering at least one of the ends where the side surface intersects with the surface to be bonded to the cathode electrode.
JP27754385A 1985-12-10 1985-12-10 Sputtering target Granted JPS62136564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27754385A JPS62136564A (en) 1985-12-10 1985-12-10 Sputtering target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27754385A JPS62136564A (en) 1985-12-10 1985-12-10 Sputtering target

Publications (2)

Publication Number Publication Date
JPS62136564A true JPS62136564A (en) 1987-06-19
JPS6246631B2 JPS6246631B2 (en) 1987-10-02

Family

ID=17585009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27754385A Granted JPS62136564A (en) 1985-12-10 1985-12-10 Sputtering target

Country Status (1)

Country Link
JP (1) JPS62136564A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970033327A (en) * 1995-12-28 1997-07-22 김익명 Method for producing indium tin oxide target
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970033327A (en) * 1995-12-28 1997-07-22 김익명 Method for producing indium tin oxide target
US7652223B2 (en) * 2005-06-13 2010-01-26 Applied Materials, Inc. Electron beam welding of sputtering target tiles

Also Published As

Publication number Publication date
JPS6246631B2 (en) 1987-10-02

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