JPS62113794A - 帯状シリコン結晶の製造方法 - Google Patents
帯状シリコン結晶の製造方法Info
- Publication number
- JPS62113794A JPS62113794A JP25409985A JP25409985A JPS62113794A JP S62113794 A JPS62113794 A JP S62113794A JP 25409985 A JP25409985 A JP 25409985A JP 25409985 A JP25409985 A JP 25409985A JP S62113794 A JPS62113794 A JP S62113794A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- silicon
- crucible
- silicon melt
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 76
- 239000010703 silicon Substances 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000013078 crystal Substances 0.000 claims abstract description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 33
- 239000011230 binding agent Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 33
- 229910052799 carbon Inorganic materials 0.000 abstract description 17
- 239000004568 cement Substances 0.000 abstract description 4
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 229910002804 graphite Inorganic materials 0.000 description 16
- 239000010439 graphite Substances 0.000 description 16
- 238000009941 weaving Methods 0.000 description 11
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25409985A JPS62113794A (ja) | 1985-11-13 | 1985-11-13 | 帯状シリコン結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25409985A JPS62113794A (ja) | 1985-11-13 | 1985-11-13 | 帯状シリコン結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62113794A true JPS62113794A (ja) | 1987-05-25 |
| JPH0375514B2 JPH0375514B2 (enrdf_load_stackoverflow) | 1991-12-02 |
Family
ID=17260207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25409985A Granted JPS62113794A (ja) | 1985-11-13 | 1985-11-13 | 帯状シリコン結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62113794A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009029761A1 (en) * | 2007-08-31 | 2009-03-05 | Evergreen Solar, Inc. | Ribbon crystal string with extruded refractory material |
| US8304057B2 (en) | 2007-08-31 | 2012-11-06 | Max Era, Inc. | Ribbon crystal end string with multiple individual strings |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58194798A (ja) * | 1982-05-07 | 1983-11-12 | Toshiba Corp | 平板状シリコン結晶の成長装置 |
-
1985
- 1985-11-13 JP JP25409985A patent/JPS62113794A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58194798A (ja) * | 1982-05-07 | 1983-11-12 | Toshiba Corp | 平板状シリコン結晶の成長装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009029761A1 (en) * | 2007-08-31 | 2009-03-05 | Evergreen Solar, Inc. | Ribbon crystal string with extruded refractory material |
| US7651768B2 (en) | 2007-08-31 | 2010-01-26 | Evergreen Solar, Inc. | Reduced wetting string for ribbon crystal |
| CN101784701A (zh) * | 2007-08-31 | 2010-07-21 | 长青太阳能股份有限公司 | 具有经挤出的耐火材料的带状晶体线 |
| US8304057B2 (en) | 2007-08-31 | 2012-11-06 | Max Era, Inc. | Ribbon crystal end string with multiple individual strings |
| US8309209B2 (en) | 2007-08-31 | 2012-11-13 | Max Era, Inc. | Ribbon crystal string for increasing wafer yield |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0375514B2 (enrdf_load_stackoverflow) | 1991-12-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |