CN101784701A - 具有经挤出的耐火材料的带状晶体线 - Google Patents
具有经挤出的耐火材料的带状晶体线 Download PDFInfo
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Abstract
本发明涉及一种制造用于线带状晶体的线的方法,该方法包括:提供具有外表面的衬底;将耐火材料挤出到所述衬底上。所述耐火材料基本上覆盖所述衬底的外表面。然后,该方法还包括:固化耐火材料。
Description
优先权和相关申请的交叉引用
本专利申请要求2007年8月31日递交的、发明人为ChristineRichardson、Lawrence Felton、Richard Wallace和Scott Reitsma、发明名称为“STRING RIBBON CRYSTAL AND STRING WITH IMPROVEDEFFICIENCY”的临时美国专利申请60/969,263号的优先权,其公开的全部内容通过引用结合于此。
本专利申请还涉及与之同日提交的以下共同待决、共同拥有的专利申请,这些专利申请要求与如上所述相同的优先权并且其全部内容通过引用结合于此:
代理人案卷号3253/172,发明名称为“REDUCED WETTINGSTRING FOR RIBBON CRYSTAL”(用于带状晶体的减少润湿线);以及
代理人案卷号3253/174,发明名称为“RIBBON CRYSTALSTRING FOR INCREASING WAFER YIELD”(用于带状晶体的减少润湿线)。
技术领域
本发明总体上涉及线带状晶体(string ribbond crystal),更具体地,本发明还涉及用于形成线带状晶体的线。
背景技术
诸如在美国专利4,689,109(1987年公布,Emanuel M.Sachs为单独发明人)中讨论的线带状晶体可以形成各种电子器件的基础。例如,常青太阳能公司(Evergreen Solar,Inc.)(莫尔伯勒市,马萨诸塞州)由常规的线带状晶体形成太阳能电池。
如所述专利中更详细讨论的,通过使两个或更多个线穿过熔融硅来形成线带状晶体。该线的组成和性质对最终形成的线带状晶体的效率产生显著影响,并且在某些情况下,对最终形成的线带状晶体的成本产生显著影响。
发明内容
根据本发明的一个实施方案,一种制造用于线带状晶体的线的方法包括:提供具有外表面的衬底;将耐火材料挤出到衬底上。耐火材料基本上覆盖衬底的外表面。然后,该方法还包括固化耐火材料。
例如,衬底可以由碳丝(filament)或丝束(tow)形成,而经挤出的耐火材料可以包括碳化硅。所述方法还可以在耐火材料的径向外部形成外部减少润湿层。在一些实施方案中,衬底和耐火材料形成大致伸长的横截面形状和/或大致同心。
在本发明的其他实施方案中,用于形成带状晶体的线具有衬底和经挤出的耐火材料层,所述耐火材料层基本上覆盖衬底。
附图说明
参照以下总结的附图并根据所讨论的“具体实施方式”,本领域技术人员会更充分地理解本发明各种实施方案的优点。
图1示意性示出可以由根据本发明示例性实施方案构造的线形成的线带状晶体。
图2示意性示出用于形成线带状晶体的示例性炉。
图3示意性示出具有现有技术线的现有技术带状晶体中的一部分的横截面图。
图4A示意性示出根据本发明示例性实施方案形成的线。
图4B示意性示出根据本发明的各种实施方案沿着图4A中线的虚线B-B的8个横截面图。
图5示出使用根据本发明示例性实施方案构造的线形成线带状晶体的示例性工艺。
图6A、图6B和图6C示意性示出使用根据具有伸长横截面的线的实施方案的带状晶体的横截面图。
图7A和图7B示意性示出具有用于执行单线功能的多个线的带状晶体的横截面图。
图8A和图8B示意性示出具有横截面形状为大致凹形的带状晶体。
具体实施方式
示例性实施方案在芯/衬底上方挤出耐火材料,以形成用于生长带状晶体的线。这个过程有利地避免使用需要有害化学品的复杂的现有技术工艺(例如,CVD工艺)。以下讨论各种实施方案的细节。
图1示意性示出根据本发明示例性实施方案构造的线带状晶体10。采用与其他带状晶体相类似的方式,该带状晶体10具有大致矩形形状并且其前表面和后表面具有相对大的表面积。例如,带状晶体10可以具有约3英寸的宽度,并且其长度为约6英寸。如本领域技术人员所知道的,长度可以发生显著变化。例如,在一些已知的工艺中,长度取决于当带状晶体10生长时炉操作者对于切割带状晶体10的判断力。另外,可以根据其形成带状晶体宽度边界的两个线12(参见图12)的分离来变化宽度。因此,对于特定长度和宽度的讨论是示例性的,并不意图限制本发明的各种实施方案。
带状晶体10的厚度可以发生变化,并且相对于其长度和宽度尺寸是非常小的。例如,线带状晶体10在其宽度上可以具有的厚度的范围从约60微米至约320微米。尽管厚度存在这种变化,线带状晶体10也可以被视为在其长度和/或宽度上具有平均的厚度。
带状晶体10可以由各种材料(通常被统称为“带状材料”或“晶体材料”)中的任意一种形成,这取决于其应用方式。例如,当生长带状晶体10以供光电应用时,带状晶体10可以由诸如硅的单一元素或诸如硅基材料(例如,硅锗)的化合物形成。其他示例性的带状晶体可以包括砷化镓或磷化铟。带状晶体可以是各种晶体类型中的任意一种,例如多晶(multi-crystalline)、单晶、聚晶(polycrystalline)、微晶或半晶。
如本领域技术人员所知的,带状晶体10由通常被带状材料嵌入/包封的一对线12形成。简化起见,所讨论的带状晶体10由聚晶硅带状材料形成。但是,应该重申的是,对于聚晶硅的讨论不意图限制所有的实施方案。
示例性实施方案在诸如图2所示的带状晶体生长炉14中生长带状晶体10。更具体而言,图2示意性示出可以用于形成根据本发明示例性实施方案的线带状晶体10的硅带状晶体生长炉14。其中,炉14具有壳体16,壳体16形成基本上没有氧气(以防止燃烧)的密封内部空间。该内部具有某些浓度的诸如氩的其他气体或这些气体的组合,以替代氧气。其中,壳体内部还包含坩锅18和其他组件,用于基本上同时生长4个硅带状晶体10。壳体16中的进料入口20提供了一种用于将硅给料导向到内部坩锅18的装置,而可选的窗口22使得能够对内部组件进行检查。
如图所示,坩锅18被壳体16内的内部平台支撑,并且具有基本上平坦的顶表面。坩锅18的该实施方案具有伸长的形状,并且具有用于沿着其长度生长并排布置的硅带状晶体10的区域。在示例性实施方案中,坩锅18由石墨形成,并且对于使硅保持在其熔点之上的温度来说是耐热的。为了改进结果,坩锅18具有的长度远大于其宽度。例如,坩锅18的长度可以是其宽度的3倍或更多倍。当然,在一些实施方案中,坩锅18没有以这种方式伸长。例如,坩锅18可以具有稍微方形的形状或者非矩形的形状。
如图2中所示并且在以下更详细讨论的,炉14具有用于容纳线12的多个孔24(以虚拟方式示出)。具体而言,图2中的炉14具有用于容纳四对线12的8个线孔24。每对线12穿过坩锅18中的熔融硅,以形成单带状晶体10。
许多传统的带状晶体生长工艺形成在线附近具有薄颈部的带状晶体。更具体而言,图3示意性示出具有现有技术线12P的现有技术带状晶体10P中的一部分的横截面图。现有技术的带状晶体10P在带状晶体10的线12P和较宽部38之间具有薄颈部36。如果颈部36太薄,则带状晶体10P会非常脆并且更容易破裂,从而导致收率损失。例如,如果线12p和形成带状晶体10P的带状材料(例如,聚晶硅)之间的热膨胀系数的差足够大,则带状晶体10P会更容易在颈部36发生破裂。
为了增大颈部厚度,本领域技术人员向带状生长工艺添加了设备。例如,一种这样的方案是将气体喷射器(未示出)添加到炉14中。这些气体喷射器将相对冷的气体流导向颈部36,从而降低了那个区域的温度,以增大颈部厚度。其他方案涉及添加专用的半月板成形器(meniscus shaper)。
与使用这种附加的外部措施不同的是,本发明的示例性实施方案以指定方式设计线12的横截面尺寸。然后,线12以使生长带状晶体10的颈部36的尺寸增大的方式定位在晶体生长炉14内。例如,平均厚度为约190微米的所得到的带状晶体10可以具有最小厚度为约60微米的颈部36,这会满足某些应用的需要。这种创新因此减少了收率损失,从而降低了生产成本。
图4A示意性示出可以根据本发明的示例性实施方案形成的线12。虽然该附图看上去示出了大致凸形或圆形的横截面,但是该附图应该被视为只是示意性的而不是代表任何特定的横截面形状。为此,图4B示意性示出根据本发明的多个不同实施方案沿着图4A中线12的横截面线B-B的8个可能的横截面图。例如,这些形状中的一些形状被大致伸长,例如,线1的不规则形状、线2的矩形形状和线3的稍微椭圆形状。
无论它们是否伸长,各种线12都可以被分类为大致凹形或大致凸形。如本文所使用的,横截面形状当其周边形成至少一个不可忽略的凹度时大致为凹形。因此,线1被视为大致凹形,尽管其存在其他的凸形部。相反地,横截面形状当其周边没有形成不可忽略的凹度时被视为大致凸形。因此,图4中的线2和线3大致为凸形。
图4B示出大致为凹形的多个其他横截面线形状。事实上,一些可以被视为伸长的和凹形的。例如,线4大致为“C”形、凹形和伸长的,而线5大致为十字形、凹形的但不是伸长的。线5的形状(十字形)不是伸长的,这是因为其大致是对称的,即十字的水平部和垂直部大约是相同的尺寸。根据线8的实际尺寸,线8(大致为“T”形)会或者不会被视为伸长的。例如,如果“T”形中向下延伸的部分比其水平部分长,则线8可以被视为伸长的。在任一情况下,线8被视为大致是凹形。
一些实施方案使用多个线12来形成带状晶体10的一个边缘。线6和线7示出两个这种实施方案。具体而言,线6示出一个实施方案,其中,在最终的带状晶体10中各个线12彼此接触,而线7示出另一实施方案,其中,在最终的带状晶体10中各个线12彼此分隔。应该注意的是,使用多个线12的实施方案可以使用不止两个线12。另外,该多个线的实施方案中的各个线12可以具有相同或不同的横截面形状(例如,第一椭圆形线12和其他的十字形或圆形线12)。
图4B中的具体形状只是多种不同横截面线形状的示例。例如,一些实施方案使用具有大致圆形的横截面形状的线。因此,本领域技术人员应该理解的是,其他的线形状也落入各种实施方案的范围内。
图5示出形成具有根据本发明示例性实施方案构造的线12的线带状晶体10的示例性工艺。为了简化起见,只参照图4B中的线2来讨论该工艺,这是因为线2是该附图中清楚示出该工艺中所讨论的各种线层的仅有的线12。但是,应该注意的是,所讨论的原理适用于具有其他横截面形状的线12或由其他工艺形成的其他线。
工艺开始于步骤500,即形成芯/衬底28,该芯/衬底28用作接纳耐火材料层的衬底。如在代理人案卷号为3253/172、名称为“REDUCEDWETTING STRING FOR RIBBON CRYSTAL”(用于带状晶体的减少润湿线)、共同待决的美国专利申请(以上通过引用结合于此)更详细讨论的,可以通过传统的挤出工艺由碳来形成芯28。然而,在其他实施方案中,芯28可以是线材(wire)、丝或缠绕在一起作为丝束的多个小导电纤维。例如,后制造工艺可以通过诸如氧化、碳化或渗透的已知制造工艺来形成单丝。
芯28可以具有所需的横截面形状。例如,如图4B中所示,线2的芯28大致为矩形。可替选地,芯28可以具有不同的横截面形状,而耐火材料应用设备可以专门构造用于形成所期望的横截面形状。例如,挤出设备可以专门构造用于由具有预定横截面形状的芯材料形成横截面形状,所述预定横截面形状与最终的横截面线形状相同或不同。
在形成芯28之后,工艺形成用作上述耐火材料层30的第一涂层/层(步骤502)。其中,第一涂层30可以包括碳化硅、钨或者碳化硅和钨的组合。传统思维是使得该外表面30应该非常光滑,以使当其在炉24内接触熔融硅材料时会出现的成核现象最小化。期望的是,较少的成核现象应该产生较少的晶粒,并因此产生较少的晶粒边界。结果,与具有更多晶粒和更多晶粒边界的线12相比,这种线12应该是更加电学有效的。
为此,本发明人已知的一个通用的现有技术工艺使用化学气相沉积(即,CVD)来形成耐火材料层30。因此,这种现有技术的线应该具有更光滑的外表面,并因此产生较少的晶粒和晶粒边界。然而,不理想的是,这类工艺是复杂的并且使用有害的化学品。
示例性实施方案解决了这些问题。具体而言,为了避免CVD工艺(或其他类似的工艺)中使用这类复杂的机械和有害化学品,示例性实施方案直接将耐火材料挤出到芯/衬底28上,由此覆盖芯28的基本上整个外(外围)表面。然而,这与现有技术的教导是相反的,这是因为预料到的是产生比较不光滑的表面。但是,本发明人预期,这种线可以产生令人满意的结果,即成本节省得更多并且安全风险更小。
其中,经挤出的耐火材料层30的形成还会涉及拉挤成型(pulltrusion)工艺,具有聚合物组分的耐火材料的旋压,随后被烘焙。结合挤出/拉挤成型的工艺可以使用碳、硅、碳化硅、氮化硅、铝、多铝红柱石、二氧化硅、BN颗粒或者混合有聚合物粘合物的纤维中的至少一种组分。这还会涉及具有碳化硅、碳、硅中的至少一种的芯28和具有氧化物、多铝红柱石、碳和/或碳化硅中的至少一种的鞘的双组分挤出。因此,如上所述,芯28有效地用作支撑耐火材料层30的衬底。例如,耐火材料层30可以(或可以不)与芯28大致同心。在耐火材料层30被挤出到芯28上之后,使得耐火材料层30能够硬化/固化充足的时间量。
如以下所讨论的,一些实施方案在耐火材料层30的径向外部形成一个或多个层。这类层可以比较光滑,或者其粗糙度与该层30的粗糙度相类似。
该步骤因此形成被视为基础线部26的部分。在该工艺中的此时,基础线部26具有组合的热膨胀系数,该热膨胀系数通常优选地匹配带状材料的热膨胀系数。具体而言,线12的热膨胀特性应该足以匹配带状材料,使得在界面处没有出现过多的应力。在合理的随后带状晶体操纵和处理步骤中,如果线12表现出与带状晶体的分离,或者如果线12表现出从带状晶体边缘向外或向内卷曲的趋势,则应力被视为过多。然而,在其他实施方案中,基础线部26的热膨胀系数通常与带状材料的热膨胀系数不匹配。
如上所述,根据应用,本发明的一些实施方案可以具有一个或多个附加层。例如,如在上述并入的代理人案卷号为3235/172的专利申请中更详细讨论的,线12可以具有非润湿/降低润湿的层32,以增大带状材料的晶粒尺寸。在该情况下,工艺进行到步骤504,该步骤504在基础线部26上形成暴露的非润湿/降低润湿的层32。在对于热膨胀系数差敏感的应用中,该层32优选地非常薄,使得它对整体线的热膨胀系数的影响可以忽略不计。例如,降低润湿的层32应该比耐火材料层30的厚度薄得多。
在使用该非润湿层32的实施方案中,应该仔细控制其外表面与带状材料的接触角,以造成熔融的带状材料与之附着---否则,该工艺不能够形成带状晶体10。在使用熔融聚晶硅的应用中,例如,预料到的是,在约15度至120度之间的与硅的接触角应该产生令人满意的结果。这类大于25度的角度可以产生更好的结果。
在其他方式之中,可以通过CVD工艺、浸涂或其他方法来形成非润湿层32。例如,可以采用CVD涂覆的方法,通过在沉积腔室内涂布电接触同时通过腔室进料来涂布基础线部26----由此基础线部26自身受热。可替选地,可以通过腔室感应加热来加热基础线部26。
用于实现该步骤的现有技术包括:
·在CVD炉的端部或在重绕期间,溶胶凝胶浸蘸,用于二氧化硅或氧化铝或碳氧化硅,
·通过从外部加热石英并且感应加热基础线部26来沉积CVD非润湿涂层,
·用随后将会被烧掉的聚合物粘合物来进行喷涂沉积,
·将颗粒摇动到基础线部26或丝束上,然后将其烘焙到基础线部26或丝束中,以及
·用耐火浆体(例如,碳化硅/二氧化硅)或液体对基础线部26进行涂覆,然后烧掉残余物。
线12还可以具有操纵层34,该操纵层34在耐火材料层30的径向外部,以保持基础线部26的完整。为此,如果被包含的话,操纵层34对基础线部26提供小的压应力,由此提高整体线12的坚固性。因此,如果基础线部26出现裂缝,则操纵层34的压应力应该减小线12将破裂的可能性。其中,操纵层34可以是碳的薄层(例如,具有大致已知尺寸的线12的厚度为1微米或2微米)。
因此,在执行步骤504之前,一些实施方案可以形成与所产生的非润湿层32分离的操纵层34(例如,参见图4B中的线2)。因此,在这种实施方案中,非润湿层32基本上覆盖操纵层34。更具体而言,非润湿层32覆盖操纵层34的外围表面。然而,一些实施方案可以将非润湿层32集成到操纵层34中。
然后,在步骤506中确定所涂覆的线12是否具有延伸穿过非润湿层32的丝(这类丝在本文中被称作“须晶”)。这会出现在例如丝的丝束形成芯28时。如果所涂覆的线12具有须晶,则在步骤508中将其剃除。随后,该工艺可以循环返回步骤504,步骤504再涂布非润湿层32。
可替选地,如果线12没有须晶,则工艺进行到步骤510,步骤510向如图2所示的炉14提供线12。为此,一些实施方案提供用于每个带状晶体边缘的单个线12,或者用于每个带状晶体边缘的多个线12(例如,图4B的线6和线7)。除非作相反地清楚修改(例如,通过“单个”或“多个”的词语),否则在参照形成带状晶体10的边界/宽度提及术语“线”时,术语“线”通常意味着一个或多个线。
与使用以上形成线12的方法不同的是,一些实施方案将凹度加工或钻孔成圆形或其他另外大致凸形线12。因此,线12可以通过其他方法形成。
示例性实施方案以增大带状晶体颈部36的厚度的方式使在炉14中的线12被定向。例如,图6A至图6C示意性示出具有线12的三个带状晶体10的横截面图,该线12具有伸长的、大致椭圆、大致凸形横截面形状。为了增大颈部36的厚度,这些实施方案定向它们各自的大致纵轴42,使得它们偏离其各自的带状晶体10的宽度尺寸。换言之,为了满足偏离,纵轴42没有与宽度尺寸平行-----而是,纵轴42和宽度尺寸相交。
更具体而言,每个线12的横截面具有最大的尺寸,每个尺寸都示出为图6A至图6C中的双箭头。为了进行参考,这些伸长横截面形状中的每个横截面形状的纵轴42因此被视为与最大尺寸共线。例如,图6A将纵轴42定向为基本上与宽度尺寸垂直,而图6C将纵轴42定向成与宽度尺寸形成浅角。图6B定向在图6A和图6C的极端之间的纵轴42。
应该注意的是,与图6A至图6C中所示的取向不同的取向应该提供满意的结果。例如,以其从图6B所示的角度旋转约90度(顺时针或逆时针)的方式定向纵轴42也应该增大颈尺寸。
图8A和图8B示意性示出具有横截面形状为大致凹形的线12的两个带状晶体10。如图所示,线12被定向,使得它们的凹度完全向着晶片宽度(即,在X方向上)或者完全背离晶片宽度(即,在X方向上)定向。具体而言,凹度大致对称地定向,例如,凹度在X轴上方和下方形成镜面图像。然而,从这些方位的显著旋转(顺时针或逆时针)会影响半月板形状,以妨碍适当的晶体生长。本领域技术人员可以将这种构思应用于线12,该线12具有多个凹度或者在横截面形状(例如,十字形)的相对面上具有多个凹度。
此时,对于正在生长的每个带状晶体10,工艺使得两个线12(一起形成最终的带状晶体宽度)穿过炉14和坩锅18,由此形成线带状晶体10(步骤512)。
因此,本发明的示例性实施方案将耐火材料层30挤出到芯28上,由此避免与现有技术的沉积技术和降低生产成本相关的问题。
虽然以上的讨论公开了本发明的各种示例性实施方案,但是应该清楚的是,本领域技术人员可以在不脱离本发明的真实范围的情况下,对将实现本发明的这些优点进行各种修改。
Claims (21)
1.一种制造用于线带状晶体的线的方法,所述方法包括:
提供具有外表面的衬底;
将耐火材料挤出到所述衬底上,所述耐火材料基本上覆盖所述衬底的外表面;
固化所述耐火材料。
2.如权利要求1所述的方法,其中所述衬底包括碳丝。
3.如权利要求1所述的方法,其中所述耐火材料包括碳化硅。
4.如权利要求1所述的方法,其中所述衬底包括丝束。
5.如权利要求1所述的方法,还包括:在所述耐火材料的径向外部形成外部减少润湿层。
6.如权利要求1所述的方法,其中所述衬底和耐火材料形成大致伸长的横截面形状。
7.如权利要求1所述的方法,其中所述衬底和耐火材料大致是同心的。
8.一种用于形成带状晶体的线,所述线包含:
衬底,所述衬底具有外表面;以及
经挤出的耐火材料层,所述经挤出的耐火材料层基本上覆盖所述衬底的外表面。
9.如权利要求8所述的线,其中所述衬底包括碳丝。
10.如权利要求8所述的线,其中所述耐火材料包括碳化硅。
11.如权利要求8所述的线,其中所述衬底包括丝束。
12.如权利要求8所述的线,还包含在所述耐火材料的径向外部的外部减少润湿层。
13.如权利要求8所述的线,其中所述衬底和耐火材料形成大致伸长的横截面形状。
14.如权利要求8所述的线,其中所述衬底和耐火材料大致是同心的。
15.如权利要求8所述的线,还包含在所述耐火材料的径向外部的操纵层。
16.一种形成带状晶体的线,所述线包含:
衬底;以及
经挤出的耐火装置,所述经挤出的耐火装置基本上覆盖所述衬底。
17.如权利要求16所述的线,其中所述经挤出的耐火装置包括耐火材料。
18.如权利要求16所述的线,其中所述衬底包括碳丝。
19.如权利要求16所述的线,其中所述经挤出的耐火装置包括碳化硅。
20.如权利要求16所述的线,其中所述衬底包括丝束。
21.如权利要求16所述的线,还包含在所述经挤出的耐火装置的径向外部的外部减少润湿层。
Applications Claiming Priority (3)
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US96926307P | 2007-08-31 | 2007-08-31 | |
US60/969,263 | 2007-08-31 | ||
PCT/US2008/074741 WO2009029761A1 (en) | 2007-08-31 | 2008-08-29 | Ribbon crystal string with extruded refractory material |
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CN101784701A true CN101784701A (zh) | 2010-07-21 |
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ID=39995448
Family Applications (3)
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CN200880103858A Pending CN101821433A (zh) | 2007-08-31 | 2008-08-29 | 用于提高晶片产率的带状晶体线 |
CN200880103885A Pending CN101785116A (zh) | 2007-08-31 | 2008-08-29 | 用于带状晶体的减少润湿的线 |
CN200880103887A Pending CN101784701A (zh) | 2007-08-31 | 2008-08-29 | 具有经挤出的耐火材料的带状晶体线 |
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CN200880103858A Pending CN101821433A (zh) | 2007-08-31 | 2008-08-29 | 用于提高晶片产率的带状晶体线 |
CN200880103885A Pending CN101785116A (zh) | 2007-08-31 | 2008-08-29 | 用于带状晶体的减少润湿的线 |
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US (6) | US8309209B2 (zh) |
EP (3) | EP2186139B1 (zh) |
JP (1) | JP2010537934A (zh) |
KR (1) | KR20100049082A (zh) |
CN (3) | CN101821433A (zh) |
AT (1) | ATE550788T1 (zh) |
CA (2) | CA2697374A1 (zh) |
ES (2) | ES2436293T3 (zh) |
MX (1) | MX2010002309A (zh) |
WO (3) | WO2009029741A1 (zh) |
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US20070212510A1 (en) * | 2006-03-13 | 2007-09-13 | Henry Hieslmair | Thin silicon or germanium sheets and photovoltaics formed from thin sheets |
EP2186139B1 (en) * | 2007-08-31 | 2012-03-21 | Evergreen Solar, Inc. | String with reduced wetting for ribbon crystals |
WO2011014216A1 (en) * | 2009-07-27 | 2011-02-03 | E. I. Du Pont De Nemours And Company | Process and materials for making contained layers and devices made with same |
US20120164379A1 (en) * | 2010-12-22 | 2012-06-28 | Evergreen Solar, Inc. | Wide Sheet Wafer |
WO2012094169A2 (en) * | 2011-01-06 | 2012-07-12 | 1366 Technologies Inc. | Crystal ribbon fabrication with multi-component strings |
US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
DE102011001638A1 (de) * | 2011-03-29 | 2012-10-04 | C. Rob. Hammerstein Gmbh & Co. Kg | Untergestell für einen Kraftfahrzeugsitz |
CN111172588A (zh) * | 2020-01-20 | 2020-05-19 | 江苏双良新能源装备有限公司 | 一种用于生长大表面带状硅的引晶拉制方法 |
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- 2008-08-29 EP EP08828340A patent/EP2186139B1/en not_active Not-in-force
- 2008-08-29 JP JP2010523151A patent/JP2010537934A/ja active Pending
- 2008-08-29 CN CN200880103858A patent/CN101821433A/zh active Pending
- 2008-08-29 US US12/201,117 patent/US8309209B2/en not_active Expired - Fee Related
- 2008-08-29 CN CN200880103885A patent/CN101785116A/zh active Pending
- 2008-08-29 CN CN200880103887A patent/CN101784701A/zh active Pending
- 2008-08-29 WO PCT/US2008/074715 patent/WO2009029741A1/en active Application Filing
- 2008-08-29 EP EP13175698.3A patent/EP2650406A1/en not_active Ceased
- 2008-08-29 US US12/200,996 patent/US7651768B2/en not_active Expired - Fee Related
- 2008-08-29 CA CA2697374A patent/CA2697374A1/en not_active Abandoned
- 2008-08-29 MX MX2010002309A patent/MX2010002309A/es active IP Right Grant
- 2008-08-29 WO PCT/US2008/074741 patent/WO2009029761A1/en active Application Filing
- 2008-08-29 EP EP08798930.7A patent/EP2183411B1/en not_active Not-in-force
- 2008-08-29 ES ES08798930T patent/ES2436293T3/es active Active
- 2008-08-29 KR KR1020107003806A patent/KR20100049082A/ko not_active Application Discontinuation
- 2008-08-29 CA CA2697403A patent/CA2697403A1/en not_active Abandoned
- 2008-08-29 US US12/201,180 patent/US20090061224A1/en not_active Abandoned
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US8309209B2 (en) | 2012-11-13 |
EP2650406A1 (en) | 2013-10-16 |
CN101785116A (zh) | 2010-07-21 |
KR20100049082A (ko) | 2010-05-11 |
WO2009029752A1 (en) | 2009-03-05 |
US7651768B2 (en) | 2010-01-26 |
US20110247546A1 (en) | 2011-10-13 |
WO2009029761A1 (en) | 2009-03-05 |
US20100092776A1 (en) | 2010-04-15 |
US20090060823A1 (en) | 2009-03-05 |
ES2436293T3 (es) | 2013-12-30 |
US20090061224A1 (en) | 2009-03-05 |
EP2183411B1 (en) | 2013-08-21 |
ES2386999T3 (es) | 2012-09-10 |
WO2009029741A1 (en) | 2009-03-05 |
US7842270B2 (en) | 2010-11-30 |
EP2186139A1 (en) | 2010-05-19 |
US20130047914A1 (en) | 2013-02-28 |
MX2010002309A (es) | 2010-03-22 |
CA2697374A1 (en) | 2009-03-05 |
ATE550788T1 (de) | 2012-04-15 |
US20090061163A1 (en) | 2009-03-05 |
JP2010537934A (ja) | 2010-12-09 |
CA2697403A1 (en) | 2009-03-05 |
EP2186139B1 (en) | 2012-03-21 |
CN101821433A (zh) | 2010-09-01 |
EP2183411A1 (en) | 2010-05-12 |
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