JPS62102519A - 半導体製造装置用シユラウドの製造方法 - Google Patents
半導体製造装置用シユラウドの製造方法Info
- Publication number
- JPS62102519A JPS62102519A JP24366585A JP24366585A JPS62102519A JP S62102519 A JPS62102519 A JP S62102519A JP 24366585 A JP24366585 A JP 24366585A JP 24366585 A JP24366585 A JP 24366585A JP S62102519 A JPS62102519 A JP S62102519A
- Authority
- JP
- Japan
- Prior art keywords
- shroud
- cylinder
- aluminum
- cooling fluid
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 10
- 238000005468 ion implantation Methods 0.000 claims abstract description 15
- 239000012809 cooling fluid Substances 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000011247 coating layer Substances 0.000 claims description 11
- 150000002500 ions Chemical class 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 abstract description 11
- 230000007797 corrosion Effects 0.000 abstract description 10
- 230000008961 swelling Effects 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000010935 stainless steel Substances 0.000 description 9
- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- -1 nitrogen ions Chemical class 0.000 description 6
- 238000001816 cooling Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24366585A JPS62102519A (ja) | 1985-10-29 | 1985-10-29 | 半導体製造装置用シユラウドの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24366585A JPS62102519A (ja) | 1985-10-29 | 1985-10-29 | 半導体製造装置用シユラウドの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62102519A true JPS62102519A (ja) | 1987-05-13 |
| JPH0568540B2 JPH0568540B2 (enrdf_load_stackoverflow) | 1993-09-29 |
Family
ID=17107178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24366585A Granted JPS62102519A (ja) | 1985-10-29 | 1985-10-29 | 半導体製造装置用シユラウドの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62102519A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01261816A (ja) * | 1988-04-12 | 1989-10-18 | Showa Alum Corp | 真空チャンバにおける真空用冷却装置 |
| WO2008089178A3 (en) * | 2007-01-16 | 2008-12-24 | Varian Semiconductor Equipment | Plasma source with liner for reducing metal contamination |
-
1985
- 1985-10-29 JP JP24366585A patent/JPS62102519A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01261816A (ja) * | 1988-04-12 | 1989-10-18 | Showa Alum Corp | 真空チャンバにおける真空用冷却装置 |
| WO2008089178A3 (en) * | 2007-01-16 | 2008-12-24 | Varian Semiconductor Equipment | Plasma source with liner for reducing metal contamination |
| JP2010516062A (ja) * | 2007-01-16 | 2010-05-13 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 金属汚染を低減するためのライナを有するプラズマ源 |
| CN101627454B (zh) | 2007-01-16 | 2012-01-11 | 瓦里安半导体设备公司 | 具有减少金属污染的衬套的等离子源 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0568540B2 (enrdf_load_stackoverflow) | 1993-09-29 |
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