JPS62102519A - Manufacture of shroud for semiconductor manufacturing equipment - Google Patents

Abstract

PURPOSE:To obtain a shroud of light weight, good heat conductivity and good anti-corrosion by forming a covering layer by ion-implantation which makes a compound which reacts with an element of Al and is not corroded by gallium inside a cylinder for the shroud made of Al. CONSTITUTION:A cylinder made of Al which has a space for cooling fluid flow in the circumferential wall for a shroud is made. Then, a covering layer made of a compound which reacts with an element of Al and is not corrected by gallium is formed by ion implantation on at least the inner surface of both the inner and the outer surfaces of the cylinder. The cylinder for the shroud has a spiral pipe for cooling fluid flow made of Al connected to the outside of the Al cylinder or has an Al plate which has a pipe-like swelling for cooling fluid flow is made cylinder-shaped and the projection is connected, etc. This can provide the shroud of light weight, good heat conductivity and good anti- corrosion.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method for manufacturing a shroud used in an apparatus for manufacturing a film-like semiconductor containing Ga.

In this specification, the term ``Aluminum A J'' shall include aluminum alloys in addition to pure aluminum. However, when ``Aluminum element J'' is used, the term ``aluminum alloys'' shall not include aluminum alloys.

Conventional technology and its problems For example, when a semiconductor film containing Ga such as GaAs is
Semiconductor C such as E equipment! When manufacturing with the A structure (■), film formation in an ultra-high vacuum is an essential condition in order to obtain higher performance. Therefore, a shroud is used in the film forming chamber of the MBE apparatus. A conventional shroud has a cylindrical shape made of a stainless steel plate, and a stainless steel tube is spirally wound around the outer peripheral surface of the shroud, and a cooling fluid such as liquid nitrogen flows through the tube. When forming the semiconductor film, first, the shroud is heated to 200 to 250°C to perform a baking treatment to remove moisture adsorbed on the surface of the shroud, and then a cold fluid is introduced into the stainless steel tube. The shroud is cooled by this cooling fluid, and the residual gas in the evacuated film forming chamber is adsorbed onto its surface, thereby creating an ultra-high vacuum. However, in the conventional shroud, since the cylinder body and the tube are made of stainless steel, there is a problem that the weight n is large and the thermal conductivity is not sufficient. If the thermal conductivity is insufficient, it will take time for the entire shroud to be uniformly heated during the above-mentioned baking process, and it will also take time for the surface of the shroud to cool to the specified temperature when cooling fluid is supplied. There was a problem that it took a while.

Therefore, it is being considered to make the shroud from aluminum, which is lighter in weight and has better thermal conductivity than stainless steel, but also has a smaller surface gas release coefficient.
The reality is that aluminum shrouds have not yet been realized because aluminum is corroded by GaB vaporized during film formation and through holes are generated.

An object of the present invention is to provide a method for manufacturing a shroud for semiconductor manufacturing equipment that solves the above problems.

Means for Solving the Problems In the method of manufacturing a shroud for semiconductor manufacturing equipment according to the present invention, after an aluminum shroud cylinder having a cooling fluid circulation portion on the peripheral wall is manufactured, at least the inner surface of the inside and outside surfaces of the cylinder is manufactured. This method is characterized in that a coating layer made of the above compound is formed by implanting ions that react with aluminum element and create a compound that is not attacked by gallium using an ion implantation method.

In the above, the shroud cylindrical body is one in which an aluminum cooling fluid distribution pipe is spirally wound and bonded to the outer circumferential surface of an aluminum cylinder, or one for cold fluid distribution such as a roll bond panel. Aluminum with tubular bulge! There is one in which a No. 11 plate-shaped plate is formed into a cylindrical shape and the butted portions are joined.

Furthermore, in the above, there are many ions that react with the aluminum element to form compounds that are not attacked by gallium, and among them, for example, nitrogen ions, oxygen ions, carbon ions, etc. are used. These ions are obtained from easily gasified N2.02, C, etc. Compounds produced by the reaction of the above ions with the aluminum element include AIN, Δ/203, A/C, and the like.

Moreover, it is preferable that the thickness of the coating layer of the compound is within the range of 0.1 to 1. The reason is that the thickness of the coating layer is 0.
If the thickness is less than 1 ttm, the corrosion resistance of the coating layer against gallium will not be sufficient, and the thickness cannot be increased beyond 1 ttm by ion implantation. The thickness of the coating layer is controlled by controlling the acceleration voltage related to the implantation depth, the ion implantation current related to the implantation path, etc. during ion implantation. In order to make the thickness of the coating layer 0.1 to 1 μm, for example, the acceleration voltage is controlled to 50 to 500, and the ion implantation current is controlled so that the implantation amount is 1×1018 to 1×1019 ions/d. do.

Example Examples of the present invention will be shown below along with comparative examples.

Example 1 First, a cylindrical body for a shroud having a cooling fluid circulation portion on the peripheral wall was made from an aluminum material. Next, this shroud cylinder was targeted, and an accelerating voltage of 300 was applied to its inner surface.
1×1019 nitrogen ions/c under the condition of V
i injected. Then, an AIN layer with a thickness of 1 p was formed on the inner surface of the cylinder.

After adding 1 g of Ga to the inner surface of the shroud cylinder, a thermal cycle test of heating at 200°C for 24 hours and then cooling with liquid nitrogen for 30 minutes was repeated for 6 cycles to investigate corrosion caused by Ga. Ta. As a result of observing the inner surface of the cylinder, no corrosion by Ga was observed.

Example 2 Carbon ions were used as implanted ions during ion implantation, acceleration voltage was 100 KV, and ion implantation was performed at ff1lX101.
An A/C layer with a thickness of 0.5 mm was formed on the inner surface of the shroud facing body in the same manner as in Example 1, except that the number of layers was 8 pieces/ci. Examined. As a result, no corrosion by Ga was observed on the inner surface of the shroud cylinder.

Example 3 Oxygen ions were used as the implanted ions during ion implantation, and the accelerating voltage, 3. OOKV, ion implantation m1X101
An A/203 layer having a thickness of 171,177 mm was formed on the inner surface of the shroud cylinder in the same manner as in Example 1, except that the number of particles/d was 9 pieces/d, and corrosion by Ga was examined in the same manner as in Example 1. As a result, no corrosion by Ga was observed on the inner surface of the shroud cylinder.

Comparative Example First, a cylindrical body for a shroud having a cooling fluid circulation portion on the peripheral wall was made from an aluminum material. After applying 1 g of Ga to the inner surface of the shroud cylinder,
A thermal cycle test of heating for 30 minutes followed by cooling with liquid nitrogen for 30 minutes was repeated for 6 cycles to examine corrosion caused by Ga. As a result of observing the inner surface of the cylinder, severe corrosion by Ga was observed.

Effects of the Invention In the method of manufacturing a shroud for semiconductor manufacturing equipment according to the present invention, after making an aluminum shroud cylinder having a cooling fluid circulation portion on the peripheral wall, at least the inner surface of both the inner and outer surfaces thereof is implanted by ion implantation. It is characterized by forming a coating layer made of the above compound by implanting ions that react with the aluminum element and create a compound that is not attacked by gallium, so it is lighter than conventional stainless steel ones. , good thermal conductivity, and G
It is possible to easily manufacture a shroud having corrosion resistance against a that is equivalent to that made of stainless steel. In particular, since it has excellent thermal conductivity, it is possible to shorten the baking treatment time during semiconductor film formation compared to conventional products, and it is also possible to shorten the baking treatment time when forming a semiconductor film compared to conventional ones. The cooling efficiency is improved, and the residual gas adsorption rate during semiconductor film formation is improved.

Furthermore, since the shroud cylinder is made from aluminum, it is easier to process than when it is made from stainless steel.

In addition, since the coating layer is formed by ion implantation, moisture is not adsorbed to this layer when the coating layer is formed, and the shroud manufactured by this method can be used for MBE.
When used in devices, etc., it is only necessary to perform the conventional baking treatment during film formation of semiconductor films.

In addition, since the coating layer is formed by ion implantation, this layer has excellent thermal cycling properties, including heating to about 250°C for degassing purposes and liquid nitrogen during semiconductor film formation. Even after repeated cooling, the film does not peel or crack.

Furthermore, since aluminum has a smaller gas release coefficient than stainless steel, there is less risk of reducing the degree of vacuum in the semiconductor film deposition chamber in the MBE apparatus.

that's all

Claims (1)

[Claims] After making an aluminum shroud cylinder having a cooling fluid circulation part on its peripheral wall, ions are implanted into at least the inner surface of both the inner and outer surfaces thereof by an ion implantation method to create a compound that reacts with the aluminum element and is not attacked by gallium. A method for manufacturing a shroud for semiconductor manufacturing equipment, comprising: forming a coating layer made of the above compound.