JPH0568540B2 - - Google Patents
Info
- Publication number
- JPH0568540B2 JPH0568540B2 JP24366585A JP24366585A JPH0568540B2 JP H0568540 B2 JPH0568540 B2 JP H0568540B2 JP 24366585 A JP24366585 A JP 24366585A JP 24366585 A JP24366585 A JP 24366585A JP H0568540 B2 JPH0568540 B2 JP H0568540B2
- Authority
- JP
- Japan
- Prior art keywords
- shroud
- aluminum
- cylinder
- ion implantation
- cooling fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000012809 cooling fluid Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 9
- 239000010935 stainless steel Substances 0.000 description 9
- 229910001220 stainless steel Inorganic materials 0.000 description 9
- 239000011247 coating layer Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- -1 nitrogen ions Chemical class 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24366585A JPS62102519A (ja) | 1985-10-29 | 1985-10-29 | 半導体製造装置用シユラウドの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24366585A JPS62102519A (ja) | 1985-10-29 | 1985-10-29 | 半導体製造装置用シユラウドの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62102519A JPS62102519A (ja) | 1987-05-13 |
| JPH0568540B2 true JPH0568540B2 (enrdf_load_stackoverflow) | 1993-09-29 |
Family
ID=17107178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24366585A Granted JPS62102519A (ja) | 1985-10-29 | 1985-10-29 | 半導体製造装置用シユラウドの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62102519A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01261816A (ja) * | 1988-04-12 | 1989-10-18 | Showa Alum Corp | 真空チャンバにおける真空用冷却装置 |
| US20080169183A1 (en) * | 2007-01-16 | 2008-07-17 | Varian Semiconductor Equipment Associates, Inc. | Plasma Source with Liner for Reducing Metal Contamination |
-
1985
- 1985-10-29 JP JP24366585A patent/JPS62102519A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62102519A (ja) | 1987-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4264803A (en) | Resistance-heated pyrolytic boron nitride coated graphite boat for metal vaporization | |
| Tiku et al. | Chemical vapor deposition of ZnO epitaxial films on sapphire | |
| Dus et al. | Diffusion of hydrogen in FCC alloys of nickel with iron | |
| JPH0568540B2 (enrdf_load_stackoverflow) | ||
| JPS5919190B2 (ja) | 鉛皮膜の製造方法 | |
| JPH0524230B2 (enrdf_load_stackoverflow) | ||
| JPH0545670B2 (enrdf_load_stackoverflow) | ||
| CN110230026B (zh) | 一种提高铌合金表面抗氧化能力的方法 | |
| KR101702970B1 (ko) | 물리적 기상증착법 및 화학적 기상증착법의 융합에 의한 흑연 또는 탄소/탄소 복합재 표면에 세라믹 소재의 코팅재를 코팅하는 방법 | |
| US3049447A (en) | Method of treating an alumina ceramic article with lithium borate | |
| US3703456A (en) | Method of making resistor thin films by reactive sputtering from a composite source | |
| DE102008028990B4 (de) | Erhöhung der Hochtemperaturoxidationsbeständigkeit von TiAl-Legierungen und daraus bestehenden Bauteilen durch Pl3 | |
| KR101628969B1 (ko) | 흑연 또는 탄소/탄소 복합재에 산화 저감 용 세라믹 코팅재를 코팅하는 방법 및 이에 따라 세라믹 소재의 코팅재가 코팅된 흑연 또는 탄소/탄소 복합재 | |
| JPS6374995A (ja) | エピタキシヤル成長用黒鉛材料 | |
| JPH0568539B2 (enrdf_load_stackoverflow) | ||
| Eremeev et al. | Development of a Nb3Sn cavity vapor diffusion deposition system | |
| JPS5935425A (ja) | 半導体装置の製造方法 | |
| US4120080A (en) | Method of manufacturing grid electrodes for electron tubes | |
| JPS59205468A (ja) | 高温耐食性材料 | |
| JP2620075B2 (ja) | Ｇａ化合物単結晶引き上げ装置用黒鉛材料 | |
| US3988178A (en) | Method for preparing superconductors | |
| JPH022282B2 (enrdf_load_stackoverflow) | ||
| Armi | Electrical Conduction and Recrystallization in Thin Pb Films Deposited at Low Temperatures | |
| Kurtz et al. | Uranium | |
| US3783031A (en) | Method for producing evaporation inhibiting coating for protection of silicon-germanium and silicon-molybdenum alloys at high temperatures in vacuum |