JPS62101027A - レジスト処理方法 - Google Patents

レジスト処理方法

Info

Publication number
JPS62101027A
JPS62101027A JP23945585A JP23945585A JPS62101027A JP S62101027 A JPS62101027 A JP S62101027A JP 23945585 A JP23945585 A JP 23945585A JP 23945585 A JP23945585 A JP 23945585A JP S62101027 A JPS62101027 A JP S62101027A
Authority
JP
Japan
Prior art keywords
resist
processing
wafer
synchrotron radiation
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23945585A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0515058B2 (enrdf_load_stackoverflow
Inventor
Yoshiki Mimura
芳樹 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP23945585A priority Critical patent/JPS62101027A/ja
Publication of JPS62101027A publication Critical patent/JPS62101027A/ja
Publication of JPH0515058B2 publication Critical patent/JPH0515058B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP23945585A 1985-10-28 1985-10-28 レジスト処理方法 Granted JPS62101027A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23945585A JPS62101027A (ja) 1985-10-28 1985-10-28 レジスト処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23945585A JPS62101027A (ja) 1985-10-28 1985-10-28 レジスト処理方法

Publications (2)

Publication Number Publication Date
JPS62101027A true JPS62101027A (ja) 1987-05-11
JPH0515058B2 JPH0515058B2 (enrdf_load_stackoverflow) 1993-02-26

Family

ID=17045018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23945585A Granted JPS62101027A (ja) 1985-10-28 1985-10-28 レジスト処理方法

Country Status (1)

Country Link
JP (1) JPS62101027A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01168026A (ja) * 1987-12-23 1989-07-03 Teru Kyushu Kk ベーキング装置
JPH02144333A (ja) * 1988-07-01 1990-06-04 Tokyo Electron Ltd 基板処理装置および基板搬送装置
US6361834B1 (en) * 1999-10-25 2002-03-26 Nec Corporation Resist film baking method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01168026A (ja) * 1987-12-23 1989-07-03 Teru Kyushu Kk ベーキング装置
JPH02144333A (ja) * 1988-07-01 1990-06-04 Tokyo Electron Ltd 基板処理装置および基板搬送装置
US6361834B1 (en) * 1999-10-25 2002-03-26 Nec Corporation Resist film baking method

Also Published As

Publication number Publication date
JPH0515058B2 (enrdf_load_stackoverflow) 1993-02-26

Similar Documents

Publication Publication Date Title
JPS63260028A (ja) ホトレジストの熱安定化装置
US4840876A (en) Method of treating photoresists
US5001039A (en) Method of manufacturing semiconductor device comprising step of patterning resist and light irradiation apparatus used by the manufacturing method
US4900938A (en) Method of treating photoresists
JPH0478982B2 (enrdf_load_stackoverflow)
JPS62101027A (ja) レジスト処理方法
JPS62111424A (ja) レジスト処理方法
JPS62162330A (ja) レジスト処理方法
US4841342A (en) Apparatus for treating photoresists
JPS6049630A (ja) 半導体装置の製造方法
JPS63232332A (ja) レジスト処理方法
JPS62111425A (ja) レジスト処理方法
JPS62187345A (ja) レジスト処理方法
JPS63234526A (ja) レジスト処理方法
JPH0231857B2 (enrdf_load_stackoverflow)
JP2002175772A (ja) イオン注入装置およびイオン注入方法
JPH02177420A (ja) ウエハ周辺露光装置
JPH0480760A (ja) 照射装置
EP0283668A2 (en) Method and apparatus of treating photoresists
JPS62296212A (ja) 半導体ウエハ用の処理台温度制御方法
JPS63232330A (ja) レジスト処理方法
JPH0845835A (ja) レジスト処理方法
JPS62274722A (ja) レジスト膜の形成方法
JPS63232331A (ja) レジスト処理方法
KR100497197B1 (ko) 반도체 웨이퍼의 노광방법

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees