JPS621000B2 - - Google Patents
Info
- Publication number
- JPS621000B2 JPS621000B2 JP53157497A JP15749778A JPS621000B2 JP S621000 B2 JPS621000 B2 JP S621000B2 JP 53157497 A JP53157497 A JP 53157497A JP 15749778 A JP15749778 A JP 15749778A JP S621000 B2 JPS621000 B2 JP S621000B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- wafer
- semiconductor wafer
- plating liquid
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007747 plating Methods 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000013013 elastic material Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 15
- 238000009713 electroplating Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15749778A JPS5585692A (en) | 1978-12-22 | 1978-12-22 | Plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15749778A JPS5585692A (en) | 1978-12-22 | 1978-12-22 | Plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5585692A JPS5585692A (en) | 1980-06-27 |
| JPS621000B2 true JPS621000B2 (US07943777-20110517-C00090.png) | 1987-01-10 |
Family
ID=15650968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15749778A Granted JPS5585692A (en) | 1978-12-22 | 1978-12-22 | Plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5585692A (US07943777-20110517-C00090.png) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3348528B2 (ja) * | 1994-07-20 | 2002-11-20 | 富士通株式会社 | 半導体装置の製造方法と半導体装置及び電子回路装置の製造方法と電子回路装置 |
| JP2000232078A (ja) | 1999-02-10 | 2000-08-22 | Toshiba Corp | メッキ方法及びメッキ装置 |
| US6632335B2 (en) | 1999-12-24 | 2003-10-14 | Ebara Corporation | Plating apparatus |
| CN1319130C (zh) * | 1999-12-24 | 2007-05-30 | 株式会社荏原制作所 | 半导体基片处理装置及处理方法 |
| JP4922275B2 (ja) * | 2008-10-20 | 2012-04-25 | 株式会社東芝 | メッキ方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5265665A (en) * | 1975-11-28 | 1977-05-31 | Hitachi Ltd | Formation of protruding electrode of semiconductor device |
-
1978
- 1978-12-22 JP JP15749778A patent/JPS5585692A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5265665A (en) * | 1975-11-28 | 1977-05-31 | Hitachi Ltd | Formation of protruding electrode of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5585692A (en) | 1980-06-27 |
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