JPS5265665A - Formation of protruding electrode of semiconductor device - Google Patents

Formation of protruding electrode of semiconductor device

Info

Publication number
JPS5265665A
JPS5265665A JP50141664A JP14166475A JPS5265665A JP S5265665 A JPS5265665 A JP S5265665A JP 50141664 A JP50141664 A JP 50141664A JP 14166475 A JP14166475 A JP 14166475A JP S5265665 A JPS5265665 A JP S5265665A
Authority
JP
Japan
Prior art keywords
formation
semiconductor device
protruding electrode
electrode
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50141664A
Other languages
Japanese (ja)
Inventor
Mamoru Otsu
Takahiro Kimura
Makoto Akiyama
Masaru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50141664A priority Critical patent/JPS5265665A/en
Publication of JPS5265665A publication Critical patent/JPS5265665A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Abstract

PURPOSE: To form flat protruding electrodes within a short time by fixing the face to be formed with bumps to one electrode and rubbing said face with other electrode wherein an impregnating material is impregnated with a plating sulution.
COPYRIGHT: (C)1977,JPO&Japio
JP50141664A 1975-11-28 1975-11-28 Formation of protruding electrode of semiconductor device Pending JPS5265665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50141664A JPS5265665A (en) 1975-11-28 1975-11-28 Formation of protruding electrode of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50141664A JPS5265665A (en) 1975-11-28 1975-11-28 Formation of protruding electrode of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5265665A true JPS5265665A (en) 1977-05-31

Family

ID=15297294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50141664A Pending JPS5265665A (en) 1975-11-28 1975-11-28 Formation of protruding electrode of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5265665A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585692A (en) * 1978-12-22 1980-06-27 Hitachi Ltd Plating method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5585692A (en) * 1978-12-22 1980-06-27 Hitachi Ltd Plating method
JPS621000B2 (en) * 1978-12-22 1987-01-10 Hitachi Ltd

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