JPS6199381A - 電界効果トランジスタ及びその製造方法 - Google Patents
電界効果トランジスタ及びその製造方法Info
- Publication number
- JPS6199381A JPS6199381A JP59221524A JP22152484A JPS6199381A JP S6199381 A JPS6199381 A JP S6199381A JP 59221524 A JP59221524 A JP 59221524A JP 22152484 A JP22152484 A JP 22152484A JP S6199381 A JPS6199381 A JP S6199381A
- Authority
- JP
- Japan
- Prior art keywords
- region
- channel region
- carrier concentration
- depth
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59221524A JPS6199381A (ja) | 1984-10-22 | 1984-10-22 | 電界効果トランジスタ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59221524A JPS6199381A (ja) | 1984-10-22 | 1984-10-22 | 電界効果トランジスタ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6199381A true JPS6199381A (ja) | 1986-05-17 |
| JPH0228254B2 JPH0228254B2 (enExample) | 1990-06-22 |
Family
ID=16768059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59221524A Granted JPS6199381A (ja) | 1984-10-22 | 1984-10-22 | 電界効果トランジスタ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6199381A (enExample) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63153817A (ja) * | 1986-12-17 | 1988-06-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5178552A (en) * | 1990-08-28 | 1993-01-12 | Yazaki Corporation | Connector |
| US5183410A (en) * | 1991-04-01 | 1993-02-02 | Yazaki Corporation | Connector assembly |
| US5206531A (en) * | 1990-03-19 | 1993-04-27 | Lockheed Sanders, Inc. | Semiconductor device having a control gate with reduced semiconductor contact |
| EP0709927A2 (en) | 1994-10-27 | 1996-05-01 | Sumitomo Electric Industries, Ltd. | Connector assembly |
-
1984
- 1984-10-22 JP JP59221524A patent/JPS6199381A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63153817A (ja) * | 1986-12-17 | 1988-06-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5206531A (en) * | 1990-03-19 | 1993-04-27 | Lockheed Sanders, Inc. | Semiconductor device having a control gate with reduced semiconductor contact |
| US5178552A (en) * | 1990-08-28 | 1993-01-12 | Yazaki Corporation | Connector |
| US5183410A (en) * | 1991-04-01 | 1993-02-02 | Yazaki Corporation | Connector assembly |
| EP0709927A2 (en) | 1994-10-27 | 1996-05-01 | Sumitomo Electric Industries, Ltd. | Connector assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0228254B2 (enExample) | 1990-06-22 |
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