JPS6197934A - Foreign matter removing method - Google Patents

Foreign matter removing method

Info

Publication number
JPS6197934A
JPS6197934A JP59218467A JP21846784A JPS6197934A JP S6197934 A JPS6197934 A JP S6197934A JP 59218467 A JP59218467 A JP 59218467A JP 21846784 A JP21846784 A JP 21846784A JP S6197934 A JPS6197934 A JP S6197934A
Authority
JP
Japan
Prior art keywords
foreign matter
package
vacuum vessel
cavity
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59218467A
Other languages
Japanese (ja)
Inventor
Kazuhiko Sasaki
和彦 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59218467A priority Critical patent/JPS6197934A/en
Publication of JPS6197934A publication Critical patent/JPS6197934A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7865—Means for transporting the components to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector

Abstract

PURPOSE:To remove positively foreign matters from an object, by feeding air into a vacuum vessel and exhausting it in a state in which the object from which foreign matters is to be removed is covered by a vacuum vessel. CONSTITUTION:In the case where foreign matters are removed from the interior of a cavity 5 of a package 4 before wire-bonding, a foreign matter removing apparatus E is positioned above the package 4 which is fed intermittently over a feeder 8 after bonding of a pellet 6 is finished. Thereafter, by pushing down the vacuum vessel 1 by a cylinder 9, the under face of the surrounding wall is contacted onto the upper face of the surrounding wall of the package 4 in order to define a space uniting a space 1a in the vacuum vessel 1 and the cavity 5 in the package 4. In this state, high pressure gas is jetted from above into the vacuum vessel 1 through a feeding tube 2, and the vacuum vessel 1 is exhausted through an exhausting tube 3 by a vacuum source. Thus foreign matters D existing on the bottom face of the cavity 5 or the pellet 6 can be exhausted outwardly.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は貨物の除去技術、特に、半導体装置の製造にお
けるワイヤポンディング工程においてパッケージキャビ
ティ内の異物を除去するために適用して効果のある技術
に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a cargo removal technique, and in particular to a technique that is effective when applied to remove foreign matter in a package cavity during a wire bonding process in the manufacture of semiconductor devices.

〔、ｌｒは（支持１〕 半導体″Ａｒ？、の製造過程においてパッケージまたは
リードフレームにペレットを取り付けた後、そのペレッ
トとパッケージまたはリードフレームの導電部とをワイ
ヤでポンディングして電気的に接続する場合、次のよう
な問題があることを本発明者は見い出した。[, lr is (support 1)] After attaching a pellet to a package or lead frame in the manufacturing process of the semiconductor "Ar?", the pellet and the conductive part of the package or lead frame are electrically connected by bonding with a wire. The inventor has found that the following problems occur when doing so.

すなわち、ペレット上のポンディングバンド（電極）は
特に高集積度の回路素子においては極めて微小な寸法で
あり、このような微小なポンディングバンドにワイヤボ
ンディングするためには、ポンディングバンドの位置を
正確に認識する必要がある。In other words, the bonding band (electrode) on the pellet has extremely small dimensions, especially in highly integrated circuit elements, and in order to wire bond to such a minute bonding band, the position of the bonding band must be carefully adjusted. need to be recognized accurately.

ところが、ペレット表面に何らかの原因で収芥等の異物
が付着している場合、このような異物をポンチ゛イング
パッドとｊ呉認識することがある。このような誤認識が
起こると、ワイヤが所定位置にボンディングされず、ま
たワイヤの剥がれの原因となり、その製品は不良品とな
ってしまう。However, if foreign matter such as waste is attached to the pellet surface for some reason, such foreign matter may be recognized as a punching pad. If such erroneous recognition occurs, the wire will not be bonded to a predetermined position and will cause the wire to peel off, resulting in the product being defective.

また、ワイヤボンディング後のペレット表面には、・ノ
イ＼・の切断時に発生ずる切り屑等の導電１−［の５′
ｉｌ物が（・１着することがあるが、そのままでＩＪ止
すると、特性不良を起こすおそれがある。In addition, on the pellet surface after wire bonding, conductive 1-[5'
There is a possibility that an il product will arrive (・1), but if it is stopped by IJ as it is, there is a risk of poor characteristics.

なお、ワイヤボンディングにおける異物の付着等につい
ては、昨工業調査会、昭和５６年１１月１０日発行の［
電子材料、１９８２年別面ＪＰ１６６〜ＰＩ６７に説明
されている。Regarding the adhesion of foreign matter during wire bonding, please refer to the following paper published by the Industrial Research Committee, November 10, 1981.
Electronic Materials, 1982, special edition JP166-PI67.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、異物の除去を確実に行うことのできる
技術を提供することにある。An object of the present invention is to provide a technique that can reliably remove foreign substances.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。A brief overview of typical inventions disclosed in this application is as follows.

すなわち、異物を除去されるべき対象物を真空容器で覆
った状部で、該真空容器内を給排気することによって、
異物を対象物から確実に除去することができるものであ
る。That is, by covering the object from which foreign matter is to be removed with a vacuum container, and supplying and exhausting the inside of the vacuum container,
It is possible to reliably remove foreign matter from an object.

〔）、：ｈｌＩｉ＋列〕[), :hlIi+column]

第１図は本発明の一実施例である１？、物の除去方法を
実施するための装置の要部の部分断面図、第２図はその
装置をワイヤボンディング工程に適用した場合の説明図
である。FIG. 1 shows one embodiment of the present invention. FIG. 2 is a partial sectional view of a main part of an apparatus for carrying out the object removal method, and FIG. 2 is an explanatory diagram when the apparatus is applied to a wire bonding process.

本実施例において、異物除去装置Ｅは、下側が開口した
真空容器１と、この真空容器１に対して給気＃（図示せ
ず）から高圧空気のクロき高圧流体を供給するための給
気管２と、真空容器１内の気体を排出するため図示しな
い真空源に接続された排気管３とを備えている。In this embodiment, the foreign matter removal device E includes a vacuum container 1 with an open bottom, and an air supply pipe for supplying black high-pressure fluid of high-pressure air from an air supply # (not shown) to the vacuum container 1. 2, and an exhaust pipe 3 connected to a vacuum source (not shown) for exhausting the gas in the vacuum container 1.

本実施例の異物除去技術は半導体装置の製造過程におい
てワイヤボンディングをする前および（または）後にパ
フケージのキャビティ内から塵芥やワイヤの切片等の異
物を除去するために適用されており、異物除去装置はワ
イヤボンダ（図示せず）に組み込まれているものである
。したがって、前記真空容器１は異物の除去時には第１
図に示すようにペレット６およびワイヤ７をボンディン
グされるパッケージ４のキャビティ５の上方を肩う、１
、）！３千力さ１１２、真−２７’ｊ’ｌ’　２：１１
内の一７月ｉ１１・】とキャヒーティ５とが１つの密閉
された空間を形成するようになっている。The foreign matter removal technology of this embodiment is applied to remove foreign matter such as dust and wire fragments from the cavity of a puff cage before and/or after wire bonding in the manufacturing process of semiconductor devices. is incorporated into a wire bonder (not shown). Therefore, when removing foreign matter, the vacuum container 1 is
As shown in the figure, a 1
,)! 3,000 powers 112, Shin-27'j'l' 2:11
] and Caheety 5 form one sealed space.

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

まず、ワイヤポンディングを行う前にパッケージ４のキ
ャビティ５内から異物を除去する場合、ペレット６のボ
ンディングを終了してフィーダ８上で間欠送りされて来
たパッケージ４の上方に異物除去装置Ｅを位置させる。First, when removing foreign matter from the cavity 5 of the package 4 before performing wire bonding, the foreign matter removal device E is placed above the package 4 that has been intermittently fed on the feeder 8 after bonding of the pellet 6 is completed. position.

その後、シリンダ９で真空容器１を押し下げることによ
り、その周壁部の下面がパッケージ４の周壁部の上面に
当接し、第１図に示すように、真空容器１の内部の空間
１ａとパッケージ４のキャビティ５とが１つの空間を形
成するようにする。Thereafter, by pushing down the vacuum container 1 with the cylinder 9, the lower surface of its peripheral wall comes into contact with the upper surface of the peripheral wall of the package 4, and as shown in FIG. The cavity 5 forms one space.

この状態で、第１図に矢印で示すように、給気＃（図示
せず）から給気管２を経て真空容器１内に上方から高圧
気体を噴射すると共に、真空ａ（図示ぜす）により排気
管３を経て真空容器ｌ内を排気する。In this state, as shown by the arrow in FIG. The inside of the vacuum container l is evacuated through the exhaust pipe 3.

その結果、キャビティ５内の底面やペレット６」−ニ存
／ししどいた’ｒ’１．　’ｌ’／Ｊ　ｌ）　（第１図
）は給気’Ｉ’　２　／ｒ・ら噴出された高圧気体の力
で空間１．１内に児い」二かり、排気管３による吸引力
で該排気管３を経て外部に排出される。As a result, the bottom surface inside the cavity 5 and the pellet 6'-2/resistive 'r'1. 'l'/J l) (Fig. 1) is generated in the space 1.1 by the force of the high pressure gas ejected from the supply air 'I' 2 /r. It is discharged to the outside through the exhaust pipe 3.

その場合、給気管２からの高圧気体の噴出を止めた後に
排気管３で排気してもよい。In that case, the high-pressure gas may be exhausted through the exhaust pipe 3 after the jetting of the high-pressure gas from the air supply pipe 2 is stopped.

したがって、本実施例では、パッケージ４のキャビティ
５内の異物は給気管２からの高圧気体の力で真空容器１
内の密閉された空間１ａに強制的に舞い上がらされ、か
つ排気管３を経て強制的に排出される。しかも、パッケ
ージ４内の異物は周囲に飛散しないので、その飛１１シ
異物により周囲を二次汚染し、他のペレット上に再付着
して新たに別の異物付着問題を起こすことを防止できる
。したがって、ワイヤボンディング時に異物をボンディ
ング対象として誤認識したり、異物上にワイヤボンディ
ングしてワイヤの剥がれを生じる等の問題を排除できる
。Therefore, in this embodiment, the foreign matter in the cavity 5 of the package 4 is removed from the vacuum container 1 by the force of the high pressure gas from the air supply pipe 2.
The air is forcibly blown up into the sealed space 1a inside, and is forcibly discharged through the exhaust pipe 3. Moreover, since the foreign matter in the package 4 is not scattered around, it is possible to prevent the foreign matter from secondary contaminating the surrounding area and from re-adhering to other pellets and causing another foreign matter adhesion problem. Therefore, problems such as erroneous recognition of a foreign object as a bonding target during wire bonding, and peeling of the wire due to wire bonding on a foreign object can be eliminated.

次に、異物除去を完了したパッケージ４は順次間欠送り
され、たとえば超音波式のワイヤポンダのボノリイノグ
ヘノｌ　ｌＯの１・方：Ｉ８．で（多（すＪさ−Ｕられ
る。そして、テレビカメラ等のコ忍識装置１１でワイヤ
ポンディング位置を正確に認識し、ボンディングヘット
川０で所定位置にワイヤ７をポンディングする。Next, the packages 4 from which the foreign matter has been removed are sequentially and intermittently fed, for example, by using an ultrasonic wire bonder. Then, the wire bonding position is accurately recognized using a computer intelligence device 11 such as a television camera, and the wire 7 is bonded to a predetermined position at the bonding head.

ワイヤポンディングを終了したパッケージ４はさらに間
欠送りされ、前記と同様に異物除去装置Ｅでキャビティ
５内の異物を除去される。この場合の異物除去方法は第
１図に示されているようにして行われるが、パッケージ
５内でペレット６のポンディングパノトとパッケージ４
の導電部とがワイヤ７で電気的に接続されているところ
以外は前記したワイヤポンディング前の異物除去方法と
実質的に同しである。The package 4 that has undergone wire bonding is further fed intermittently, and the foreign matter in the cavity 5 is removed by the foreign matter removing device E in the same manner as described above. The foreign matter removal method in this case is carried out as shown in FIG.
This method is substantially the same as the method for removing foreign matter before wire bonding, except that the conductive portion is electrically connected to the conductive portion by the wire 7.

もっとも、ワイヤポンディング後には、パッケージ４の
キャビティ５内にワイヤポンディング時に発生するワイ
ヤ切片等のワイヤボンディング工程に特をの異物が存在
している場合があるので、このような異物も確実に除去
されることになる。However, after wire bonding, there may be foreign matter in the cavity 5 of the package 4, such as wire pieces generated during wire bonding, so make sure to remove such foreign matter. It will be removed.

その結果、ワイヤ切片等のぶ電性異物に起因する短絡に
よってｑ、ｌ性の低下を来すよ−）へ問題か１．にくな
る。As a result, a short circuit caused by an electrically conductive foreign object such as a piece of wire causes a decrease in q and l characteristics. It becomes.

勿論、ワイヤポンディング前に前記の如く異物除去を施
しであるので、認識装置１１による誤認識やポンディン
グ不良によるワイヤ７の剥がれ等を回避できる。Of course, since foreign matter is removed as described above before wire bonding, erroneous recognition by the recognition device 11 and peeling of the wire 7 due to poor bonding can be avoided.

〔効果〕〔effect〕

（１）、異物を除去されるべき対象物を真空容器で覆っ
た後、その真空容器内に気体を噴射し、かつ該真空容器
内の気体を外部に排出することにより、異物の除去を確
実に行うことができる。(1) After covering the object to be removed with a vacuum container, injecting gas into the vacuum container and discharging the gas in the vacuum container to the outside, the removal of foreign materials is ensured. can be done.

（２）、前記＋１１により、異物が他の場所に飛散して
新たなｌη染の問題を起こすことを防止できる。(2) According to +11 above, it is possible to prevent foreign matter from scattering to other places and causing new lη staining problems.

（３）、前記ｆｉｌにより、異物による誤認識や品質低
下環を防止できる。(3) The above-mentioned fil can prevent misrecognition and quality deterioration caused by foreign substances.

（４）１本発明を半導体装置の製造過程におけるワイヤ
ポンディングの前または後に適用することにより、微小
な異物も確実に除去できるので、認識不良やワイヤポン
ディング不良、導電性異物に起因する特性不良等を排除
でき、掻めてを効である。(4) 1 By applying the present invention before or after wire bonding in the manufacturing process of semiconductor devices, it is possible to reliably remove minute foreign matter, so that it is possible to reliably remove minute foreign matter. Defects can be eliminated, which is very effective.

以上本発明を丁によっこなされた発明を実施例にＪｌ（
づき置体的に説明したが、本発明は前記実施例に限定さ
れるものではなく、その要旨を逸脱しない範囲で種々変
更可能であることはいうまでもない。The invention described above is described as an example of the invention made by Jl (
Although the present invention has been described in detail, it goes without saying that the present invention is not limited to the embodiments described above, and can be modified in various ways without departing from the spirit thereof.

たとえば、異物除去用の真空容器が被異物除去対象物と
当接する部分に第１図の二点鎖ｗＡ１２で示す如くゴム
等の密封性物質を設けておくことにより、さらに密封性
の高い空間を真空容器内に形成でき、異物の除去、さら
には飛散防止をより確実に行うことができる。For example, by providing a sealing material such as rubber as shown by the double-dot chain wA12 in Fig. 1 at the part where the vacuum container for removing foreign objects comes into contact with the object to be removed, an even more highly sealed space can be created. It can be formed inside a vacuum container, and foreign matter can be removed and scattering can be more reliably prevented.

１利用分野〕 以上の説明では王として本発明者によってなされた発明
をその背景となった利用分野である、半導体装置製造過
程におけるワイヤポンディング工程に適用した場合につ
いて説明したが、それに限定されるものではなく、たと
えば、それ以外の工程にも適用でき、さらに半導体装置
の製造以外にも適用できる。また、パンケージを用いた
ワイヤポンディング以外にもリードフレームを用いたワ
イヤポンディング等にも通用できる。1. Field of Application] In the above explanation, the invention made by the present inventor is applied to the wire bonding process in the manufacturing process of semiconductor devices, which is the field of application in which the invention is based, but the invention is limited thereto. For example, it can be applied to other processes, and furthermore, it can be applied to things other than manufacturing semiconductor devices. In addition to wire bonding using a pancage, it is also applicable to wire bonding using a lead frame.

図面の節、Ｉｉｉな説明 第１図は本発明の一実施例である異物の除去方法を実施
するための装置の要部の部分断面図、第２図はその装置
をワイヤボンディング工程に適用した場合の説明図であ
る。Figure 1 is a partial sectional view of the main parts of an apparatus for carrying out a method for removing foreign matter, which is an embodiment of the present invention, and Figure 2 is a diagram showing the apparatus applied to a wire bonding process. FIG.

１・・・真空容器、１ａ・・・空間、２給気管、３・・
・排気管、４・・・パッケージ（異物を除去されるべき
対象物）、５・　　キャヒ゛ティ、６・ｌ・ベレット、
７・　・ワイヤ、８・・・フィーダ、９・・・シリンダ
、１０−　　ポンディングヘッド、１１・　　・認識装
置、１２・密封性物質。1... Vacuum container, 1a... Space, 2 Air supply pipe, 3...
・Exhaust pipe, 4. Package (object from which foreign matter is to be removed), 5. Capacity, 6. L. Beret,
7. Wire, 8 Feeder, 9 Cylinder, 10 Ponding head, 11. Recognition device, 12 Sealing substance.

Claims (1)

【特許請求の範囲】 １、異物を除去されるべき対象物を真空容器で覆い、前
記真空容器内に気体を噴射し、かつ前記真空容器内の気
体を外部に排出することを特徴とする異物の除去方法。 ２、異物を除去されるべき対象物が半導体装置製造用の
パッケージまたはリードフレームであることを特徴とす
る特許請求の範囲第１項記載の異物の除去方法。 ３、異物の除去をワイヤボンディングの前または後に行
うことを特徴とする特許請求の範囲第２項記載の異物の
除去方法。[Claims] 1. Foreign matter characterized by covering an object from which foreign matter is to be removed with a vacuum container, injecting gas into the vacuum container, and discharging the gas in the vacuum container to the outside. How to remove. 2. The method for removing foreign matter according to claim 1, wherein the object from which foreign matter is to be removed is a package or lead frame for manufacturing a semiconductor device. 3. The method for removing foreign matter according to claim 2, wherein the foreign matter is removed before or after wire bonding.
JP59218467A 1984-10-19 1984-10-19 Foreign matter removing method Pending JPS6197934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59218467A JPS6197934A (en) 1984-10-19 1984-10-19 Foreign matter removing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59218467A JPS6197934A (en) 1984-10-19 1984-10-19 Foreign matter removing method

Publications (1)

Publication Number Publication Date
JPS6197934A true JPS6197934A (en) 1986-05-16

Family

ID=16720369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59218467A Pending JPS6197934A (en) 1984-10-19 1984-10-19 Foreign matter removing method

Country Status (1)

Country Link
JP (1) JPS6197934A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5636647A (en) * 1993-03-29 1997-06-10 Johnson & Johnson Vision Products, Inc. Solution removal nozzle

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5636647A (en) * 1993-03-29 1997-06-10 Johnson & Johnson Vision Products, Inc. Solution removal nozzle
US5698047A (en) * 1993-03-29 1997-12-16 Johnson & Johnson Vision Products, Inc. Method for removing a solution from a container package

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