JPH1027836A - Manufacture of semiconductor device and semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the yield of the production of a semiconductor device by a method wherein after inspection of the operation of a functional element is made, the processes extending over from a protective tape pasting process to background, dicing, die-bonding, wire-bonding and packaging processes are continuously executed. SOLUTION: Inspection of the operation of a functional element is made (S101), a protective tape is stuck on the surface of a substrate to shave the rear of the substrate and thereafter, an ultraviolet irradiation-cured dicing tape is pasted on the rear of the substrate (S102 to S104). The substrate is cut to form a plurality of chip components and ultraviolet rays are irradiated on the dicing tape and the protective tape to cure the dicing and protective tapes (S105). Then, the protective tape is separated from the surface of the substrate and a paste material, with which the chip components and a package member are bonded together, is cured by heating (S117), terminals of the chip components and the package member are wired (S118) and the chip components are sealed to constitute a package (S119). Accordingly, the yield of the production of a semiconductor device can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method and a semiconductor manufacturing apparatus for automatically performing a process from a functional element operation inspection process to at least a chip component packaging process.

[0002]

2. Description of the Related Art In the manufacture of a semiconductor device, after a plurality of functional elements are formed on a substrate such as silicon using various manufacturing apparatuses arranged in a clean room, an operation inspection of the functional elements is performed in a state of the substrate. Is going. After performing the operation test, the substrate is divided into functional elements to form chip components, and the chip components are mounted on a predetermined package member to perform electrical wiring. The product is completed through packaging such as hermetic sealing in a hollow package.

In general, an inspection process of a functional element formed on a substrate, an assembly process from division of the substrate after inspection to mounting on a package member, electrical wiring and packaging, and a final process from final check and packing Are performed independently of each other, and physical distribution may be performed between the respective steps.

[0004]

However, if each process is performed independently as described above, stagnation loss between the processes, dust adhesion during the distribution and storage between the processes, moisture absorption, packaging, and the like. Loss and the like have become problems, and have been problems in shortening the overall production lead time, improving productivity, improving yield, and improving quality and reliability.

It is also conceivable that the inspection process, the assembling process, and the final process are performed continuously. However, in order to prevent dust from adhering to the chip components and to prevent the chip components from being damaged, all processes must be performed in a clean room. This cannot be achieved unless very large facilities are provided.

[0006]

SUMMARY OF THE INVENTION The present invention is a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus for solving the above-mentioned problems. That is, the method for manufacturing a semiconductor device according to the present invention includes a step of performing an operation inspection of a plurality of functional elements formed on the surface of the substrate, a step of attaching a protective tape to the surface of the inspected substrate, A step of shaving the back surface of the substrate to a predetermined thickness while protecting the elements, a step of attaching a dicing tape to the back surface of the substrate, and a step of cutting the substrate and dividing into a plurality of functional elements to form chip components Picking up the chip component from the dicing tape, mounting the chip component on a predetermined package member via a predetermined paste material, curing the paste material, and electrically wiring the chip component and the terminal of the package member. It comprises a process and a process of sealing the chip components to form a package, and these processes are performed in a continuous process via an automatic transport mechanism.

In addition, a step of inspecting the operation of a plurality of functional elements formed on the surface of the substrate, a step of attaching a protective tape of an ultraviolet irradiation curing type and a heat shrink type to the surface of the inspected substrate, A process of shaving the back surface of the substrate to a predetermined thickness while protecting the functional device with a protective tape, a process of attaching a dicing tape to the back surface of the substrate, and cutting the substrate to divide each of the functional devices into chip components. After forming, a step of curing the protective tape by irradiating ultraviolet rays,
A step of picking up the chip component from the dicing tape and mounting it on a predetermined package member via a predetermined paste material, a process of curing the paste material, a process of heating the protective tape to cause self-shrinkage peeling, The method includes a step of electrically wiring the terminals of the package member and a step of sealing the chip component to form a package. These steps are performed continuously through an automatic transfer mechanism between these steps.

In a semiconductor manufacturing apparatus for attaching a protective tape to the surface of a substrate on which a functional element is formed, an attaching means for attaching a protective tape larger than the area to the surface of the substrate, and an attaching means A cutting means for cutting the attached protective tape along the outer diameter of the substrate, and a moving means for moving a contact position between the cutting means and the protective tape are provided.

Further, in a semiconductor manufacturing apparatus for cutting a substrate having an ultraviolet-irradiation-curable protective tape attached to the front surface and an ultraviolet-irradiation-curable dicing tape attached to the back surface, the substrate is cut. Thereafter, an ultraviolet irradiation means is provided for irradiating the front and back surfaces of the substrate with ultraviolet rays to cure the protective tape and the dicing tape.

Further, in a semiconductor manufacturing apparatus for mounting a chip component having a protective tape adhered to a surface thereof on a predetermined package member, mounting means for mounting the chip component on a predetermined position of the package member, and the mounting means. And heating means for heating the protective tape after the mounting of the chip component, and suction-peeling means for sucking the self-shrinking protective tape heated by the heating means and peeling off the surface of the chip component.

Further, in a semiconductor manufacturing apparatus for heating and curing a paste material for bonding a chip component having a protective tape adhered to a surface thereof to a predetermined package member, a transport means for transporting the package member, and a transport means A heating means for heating the protective tape during the transport of the chip component, and a suction-peeling means for sucking the self-contracted protective tape heated by the heating means and peeling off the surface of the chip component.

Further, in a semiconductor manufacturing apparatus for electrically wiring a chip component having a protective tape adhered to a surface thereof and a terminal of a predetermined package member, a transport means for transporting the package member having the chip component mounted thereon is provided. Heating means for heating the protective tape during conveyance by the conveying means, suction-peeling means for sucking the self-contracted protective tape heated by the heating means and peeling off the surface of the chip component, and the chip after peeling off the protective tape And wiring means for electrically wiring the components and the terminals of the package member.

In the method of manufacturing a semiconductor device according to the present invention, a protective tape is attached to the surface of the substrate after the operation inspection of the functional element, and the functional element can be protected by the protective tape from the back surface grinding step to the dicing step and the die bonding step. In addition, it can withstand some dust adhesion, and continuous processing can be performed between each process with simple equipment.

Further, by using a UV-curable and heat-shrinkable protective tape as the protective tape, the protective tape can be self-shrink-peeled by heating the protective tape immediately after die bonding or immediately before curing the paste material or immediately before wire bonding. It becomes possible to perform continuous processing between each step including tape peeling.

In a semiconductor manufacturing apparatus in which a protective tape is attached to the surface of a substrate, since the contact position between the protective tape and the cutting means can be moved by the moving means, the cutting means can be used even when the cutting degree of the cutting means decreases. It is possible to select a place where the cutting means has a good cutting condition without replacement.

Further, in a semiconductor manufacturing apparatus for cutting a substrate, after the substrate has been cut, the protective tape on the front surface and the dicing tape on the rear surface can be irradiated with ultraviolet light almost simultaneously by ultraviolet irradiation means. And the curing of the protective tape and the dicing tape can be performed continuously.

Further, in a semiconductor manufacturing apparatus in which chip components are mounted on a predetermined package member, after the chip components are mounted by the mounting means, the protective tape is heated by the heating means. However, since the suction is performed by the suction and peeling means in this state, the protective tape can be easily and continuously peeled immediately after the chip component is mounted.

In the semiconductor manufacturing apparatus for heating and curing the paste material, the protective tape is heated by the heating means while the package member is being transported by the transport means. Peeling can be performed, and peeling of the protective tape and heat curing of the paste material can be continuously performed.

In a semiconductor manufacturing apparatus for electrically wiring a chip component and a terminal of a predetermined package member, the protective tape is heated and shrunk by heating means while the package member on which the chip component is mounted is transported. Then, since the suction is carried out by the suction / peeling means, the protective tape can be peeled off without any manual operation immediately before the electric wiring between the chip component and the terminal of the package member is performed.

[0020]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a method for manufacturing a semiconductor device and a semiconductor manufacturing apparatus according to the present invention will be described below with reference to the drawings. FIG. 1 is a flowchart illustrating an embodiment of a method of manufacturing a semiconductor device according to the present invention, and FIGS.
FIG. 4 is a schematic cross-sectional view for sequentially explaining a method of manufacturing a semiconductor device.

The method of manufacturing a semiconductor device according to the present embodiment is characterized mainly in that it is possible to protect the surface of a substrate with simple equipment when each step is continuously processed through a predetermined automatic transfer mechanism. is there.

As shown in FIG. 1, there are three processing flows, which share steps S101 to S105 and proceed to any of the steps (1) to (3). First, common steps S101 to S105 will be described. In the operation inspection shown in step S101, a predetermined input signal is supplied to a functional element such as a transistor formed on a substrate, and the operation is inspected based on an output signal corresponding thereto.

In the protective tape sticking shown in the next step S102, a process of sticking a protective tape of an ultraviolet irradiation curing type and a heat shrink type to the surface of the substrate for protecting the functional element is performed. Then, in the back grinding shown in step S103, the back surface of the substrate on which the functional element is not formed is shaved to make the substrate a predetermined thickness.

FIGS. 2A to 2C correspond to steps S101 to S103 shown in FIG. That is, FIG.
After forming a predetermined functional element 2 on the surface of the substrate 1 as shown in FIG. 2A, an inspection is performed, and a protective tape 3 as shown in FIG. The protective tape 3 is made of an ultraviolet ray-curable adhesive 31 (for example, 20 to 40 μm thick) and a heat-shrinkable base film 32 (for example, 40 μm thick).
The adhesive 31 is made of, for example, an acrylic material, and the base film 32 is made of, for example, a polyolefin or polypropylene material.

Here, the initial adhesive force of the protective tape 3 includes the size of the chip component after cutting and the substrate 1 such as a wafer.
50 to 300, depending on surface irregularities, film quality, etc.
(G / 25 mm).

Further, in the operation inspection of the functional element, if the defective marking is of the Bad ink mark system instead of the mapping system, the pressure at the time of grinding the back surface of the substrate 1 in a later step is applied to the substrate 1 via the Bad ink mark. In order to concentrate, the thickness of the adhesive 31 of the protective tape 3 is set to be larger than the height of the Bad ink mark. As a result, the adhesive 31 functions as a buffer, and the concentration of pressure from the Bad ink mark to the substrate 1 is reduced, thereby preventing the substrate 1 from cracking.

In the back grinding of the back surface of the substrate 1 shown in FIG. 2C, the thickness of the substrate 1 is, for example, from 620 μm to 420 μm by roughly grinding with a grindstone of about # 320.
m, and then precision grinding using a # 2000 grindstone to reduce the thickness of the substrate 1 from 420 μm to 40 μm.
Grind to about 0 μm. Then, if necessary, the substrate 1
Is etched to remove the distortion of the substrate 1 caused by the grinding.

In this back-grinding process, pressure is applied from the front surface of the substrate 1 in order to scrape the back surface of the substrate 1. Dust and scratch adhesion can be prevented.

Next, in the dicing tape sticking shown in step S104 of FIG. 1, a process of sticking a dicing tape to the back surface of the substrate on which back grinding has been completed is performed. As shown in FIG. 3A, the dicing tape 4 is a general-purpose ultraviolet radiation curing type tape, for example, a polyolefin-based or vinyl chloride-based base film (80 μm).
m thick) UV-curable acrylic adhesive (10
μm thickness).

Here, as the dicing tape 4, an adhesive is set so that the adhesive strength after ultraviolet irradiation curing is about 50 (g / 25 mm), depending on the size of the chip component after cutting. . That is, at this time, a non-ultraviolet irradiation curing type tape may be used, but the adhesive force is set to about 50 (g / 25 mm), which is an appropriate adhesive force that does not hinder the die bond pickup, although it depends on the size of the chip component.

Next, in the dicing + ultraviolet irradiation shown in step S105 in FIG. 1, the substrate is cut from above the protective tape using a predetermined dicing blade, and full cut dicing is performed to cut the dicing tape to 30 to 40 μm. Thereafter, both the protective tape and the dicing tape are irradiated with ultraviolet rays to cure the respective adhesives, and the adhesive strength between the chip component formed in the subsequent division and the protective tape and the dicing tape is sufficiently reduced.

As shown in FIG. 3B, in dicing, the substrate 1 is subjected to full-cut dicing using a dicing blade (not shown) to form a plurality of chip components 10. When dicing, the substrate 1 and the dicing tape 4
Is generated as dust D, but does not directly adhere to the element region 2 only on the protective tape 3.

The ultraviolet irradiation performed after the full cut dicing is performed in an ultraviolet irradiation section provided in the same dicer. This dicer will be described later.

Next, a description will be given of a process to proceed to. First, in the die bonding shown in step S116, a process of picking up the formed chip component from the dicing tape and mounting it on a package member such as a lead frame or a hollow package is performed.

As shown in FIG. 3C, in dicing, the chip component 10 is pushed up from below the dicing tape 4 using a push-up pin P in order to pick up a predetermined chip component 10, and this is pushed up using a flat collet C. And vacuum mounted to mount it on a predetermined package member.

In this pickup, since the protective tape 3 is adhered to the surface of the chip component 10, even if the flat collet C is used, it does not directly touch the element region 2, and the flat collet C and the chip component The element region 2 is not damaged even if the dust D is interposed between the device region 10 and the dust D.

The fact that the flat collet C can be used in this pickup means that the same flat collet C can be picked up even when chip components 10 having different sizes are handled, so that the collet can be replaced when the size is changed. There is also a merit that productivity can be greatly improved because it becomes unnecessary.

Next, as protection tape peeling + curing shown in step S117, the protection tape attached to the surface of the chip component is peeled off, and the paste material bonding the chip component and the package member is heated and cured. Is performed continuously.

This process is performed in a heating furnace having a tape peeling function and a heating function, which will be described later. That is, while the package member on which the chip components are mounted is conveyed, the protective tape is self-shrinked by blowing clean hot air of about 100 ° C. on the protective tape. Thereafter, the protective tape that has been self-shrinked by vacuum suction is removed by suction, and further heating is performed (for example, at 200 ° C. for 1 minute) to cure the paste material while continuing to convey.

FIGS. 4A and 4B show the self-shrinkage peeling state of the protective tape. FIG. 4A shows the case of a lead frame, and FIG. 4B shows the case of a hollow package. In the case of the lead frame 20 shown in FIG. 4 (a), the die pad 21 keep the chip component 10 is adhered through the paste material 11, blowing hot air of clean N ₂ while conveying the lead frame 20 To self-shrink the protective tape 3. Then, peeling is performed by vacuum suction.

In the case of the hollow package 30 shown in FIG. 4B, the chip component 10
Through the hollow package 30 in this state.
While blowing clean N ₂ hot air. This causes the protective tape 3 to self-shrink and peel off by vacuum suction. At this time, when the hollow package 30 having poor heat conductivity is used, it is preferable to preheat the package to about 50 ° C.

Regardless of which package member is used, the protective tape 3 is self-peeled by heat shrinkage in the same heating furnace, and is heated to cure the paste material 11 during continuous conveyance.

Next, as a wire bond shown in step S118 of FIG. 1, a process of electrically wiring the chip component from which the protective tape has been peeled and a predetermined terminal of the package member is performed. The wiring is performed using a bonding wire having a diameter of, for example, 25 μm, and the temperature of the chip component is set to, for example, 150 ° C.

Next, as the packaging shown in step S119, a chip component sealing process is performed. FIG.
When the lead frame 20 shown in (a) is used, for example, the chip component 10 is formed by a transfer molding method.
Is integrally sealed with an epoxy mold resin. When the hollow package 30 shown in FIG. 4B is used,
Glass sealing is performed on the hollow package 30 using an A-stage sealer or the like, or potting sealing with a transparent resin is performed. Thus, the semiconductor device is completed.

Next, a description will be given of a case where the processing proceeds from the processing of steps S101 to S105. First, in die bond + protective tape peeling shown in step S126, a chip component is picked up from a dicing tape, mounted on a package member such as a lead frame or a hollow package, and then the protective tape attached to the chip component is peeled off. Perform continuous processing.

The die bonder used here includes a mechanism for picking up a chip component, a mechanism for applying a paste material to a predetermined position on a package member, and a so-called die bonding mechanism for mounting the chip component on the package member.
And a mechanism for heating the protective tape to self-shrink and peeling it off by vacuum suction. This die bonder will be described later.

Next, as the paste material cure shown in step S127, the paste material bonding the chip component and the package member is cured by heating. Heating and curing of this paste material is performed using a predetermined heating furnace, which is connected to the preceding die bonder via an automatic transport mechanism, and automatically performs predetermined predetermined heating processing after die bonding and protection tape peeling. Will be done.

Next, as a wire bond shown in step S128, a process of electrically wiring the chip component and the terminal of the package member by, for example, a bonding wire is performed. A wire bonder for performing a wiring process is also connected to the heating furnace through an automatic transfer mechanism so that the wire can be continuously processed.

Then, as the packaging shown in step S129, the chip component mounted on the package member is sealed to complete the package. When a lead frame is used as the package member, the chip component is integrally sealed with an epoxy-based mold resin by, for example, a transfer molding method. When a hollow package is used, glass sealing is performed on the hollow package using an A-stage sealer or the like, or potting sealing with a transparent resin is performed. Thereby, the semiconductor device is completed.

Next, a description will be given of a case where the process proceeds from the processing of steps S101 to S105. First, as a die bond shown in step S136, a process of picking up a chip component from a dicing tape and mounting it on a package member such as a lead frame or a hollow package is performed.

In the paste material curing shown in the next step S137, the paste material bonding the chip component and the package member is cured by heating. The heating furnace used here is also connected to the die bonder via the automatic transfer mechanism similarly to the above, and the automatic heating process is continuously performed after the die bonding. At this time, it is desirable to use a paste material that is cured by heating at 70 ° C. or less. Also,
As the paste material, an ultraviolet irradiation curing type or a moisture curing type may be used.

Next, in the protective tape peeling + wire bonding shown in step S138, predetermined electrical wiring is continuously performed after peeling off the protective tape attached to the surface of the transported chip component. .

In other words, the wire bonder for performing this process has a mechanism for heating the protective tape to cause it to self-shrink immediately before wiring with the bonding wire, and for peeling off by vacuum suction. A column section and a capillary for connection are arranged. As a result, the protective tape can be peeled off immediately before wire bonding without manual intervention. The wire bonder will be described later.

Then, as the packaging shown in the next step S139, a process of sealing the chip component on which the wire bonding has been completed is performed. When a lead frame is used as the package member, the chip component is integrally sealed with an epoxy-based mold resin by, for example, a transfer molding method. When a hollow package is used, glass sealing is performed on the hollow package using an A-stage sealer or the like, or potting sealing with a transparent resin is performed. Thereby, the semiconductor device is completed.

In any of the processes (1) to (4), since the protective tape is adhered to the surface of the chip component, dust may adhere to the functional element while the protective tape is adhered. Since it can be prevented from being scratched, processing can be performed without using advanced facilities such as a clean room.

FIG. 5 is a flowchart for explaining another manufacturing method. This method of manufacturing a semiconductor device is an example in the case of using a general-purpose ultraviolet irradiation-curable type as a protective tape to be attached to a substrate. First, in the operation inspection of step S201, a process of inspecting the operation of the functional element formed on the substrate is performed, and in the attaching of the protective tape of step S202, a process of attaching an ultraviolet irradiation curing type protective tape to the surface of the substrate is performed. . When the protective tape is peeled off in a later step, a low-tack, low-tack adhesive is used so that the defective mark ink attached to the substrate in the operation inspection is not peeled off. (G
/ 25 mm).

When a protective tape provided with an adhesive mixed with a surfactant is used, there is no problem in the operation inspection judgment of the mapping method. It is necessary to prevent the defective mark ink attached to the substrate from being peeled off, and to be able to cleanly remove the adhesive by cutting water or spin cleaning at the time of later dicing.

Next, in the back grinding shown in step S203, the thickness of the substrate is reduced to, for example, 620 using a grinder.
Grind from μm to about 420 μm, then # 200
Precision grinding using a No. 0 grindstone to reduce the thickness of the substrate 1 to 4
Grind from 20 μm to about 400 μm. Then, if necessary, the back surface of the substrate 1 is etched to remove the distortion of the substrate 1 caused by the grinding.

In this back grinding process, pressure is applied from the front surface of the substrate to scrape the back surface of the substrate. However, since a protective tape is attached to the front surface of the substrate, dust and scratches are prevented from adhering to the element region. it can.

Next, as the irradiation of ultraviolet rays and the peeling of the protective tape shown in step S204, the protective tape attached to the surface of the substrate is irradiated with ultraviolet rays (about 200 mJ / cm ² ).
While hardening, the hardened protective tape is peeled off. The protective tape may be peeled off by sticking it to a peeling tape. At this time, there is no problem in the operation inspection determination of the mapping method, but when the operation inspection determination is performed in the Bad mark method, the Bad ink mark is prevented from peeling.

Next, in the dicing tape sticking shown in step S205, a dicing tape of an ultraviolet irradiation curing type is stuck on the back surface of the substrate. When the dicing tape is stretched, a vinyl chloride base film is used, and when it is not stretched, a polyolefin base film is used.

Thereafter, the substrate is subjected to full-cut dicing to form a plurality of chip parts as dicing + ultraviolet irradiation shown in step S206, and then the dicing tape is cured by irradiating ultraviolet light in the same dicer. Keep the adhesive strength. At this time, a non-ultraviolet irradiation curing type may be used as the dicing tape.

Next, as the dicing tape stretching shown in step S207, the dicing tape having the plurality of divided chip components is stretched, and a gap of, for example, 0.1 mm or more is provided between the chip components. This is because when a chip component is picked up from a dicing tape, when a pyramid collet is used, the pyramid collet does not contact an adjacent chip component. Therefore, if a flat collet having a contact portion smaller than the chip component is used when picking up the chip component, the dicing tape stretching in step S207 is not necessary.

Next, as a die bond shown in step S208, a chip component is picked up from a dicing tape using a pyramid collet or a flat collet, and mounted on a package member such as a lead frame or a hollow package.

Then, as a paste material cure shown in step S209, the paste material for bonding the chip component and the package member is heated (for example, at 200 ° C. for 1 minute and at a low temperature for a long time in the high-temperature short-time curing type). (150 ° C., about 60 minutes for the type) and cured.

Next, in the wire bonding shown in step S210, the chip components and the terminals of the package member are wired by, for example, bonding wires. A gold wire having a diameter of 25 μm is used as the bonding wire, and the temperature of the chip component is heated to 150 ° C. to 250 ° C. to perform the wiring.

Then, as the packaging shown in step S211, a process of sealing the chip components for which electrical wiring has been completed to form a package is performed. For example, when the package member is formed of a lead frame, the chip component is integrally sealed with an epoxy-based mold resin by a transfer molding method, and when a hollow package is used, a glass seal is applied using an A-stage sealer or the like, The chip component is hermetically sealed in the hollow portion. Thus, the semiconductor device is completed.

By continuously processing each of the steps S201 to S211 using an automatic transport mechanism,
It is possible to improve the productivity, and by attaching a protective tape to the surface of the substrate, it is possible to prevent dust or scratches from being attached to the functional element, so that the semiconductor device can be manufactured with simple equipment. Can be manufactured.

Next, an embodiment of the semiconductor manufacturing apparatus of the present invention will be described. The semiconductor manufacturing apparatus according to the present embodiment is used to realize the above-described semiconductor device manufacturing method, that is, continuous processing from operation inspection of functional elements to packaging.

First, the semiconductor manufacturing apparatus shown in FIG. 6 is a protective tape mounter 100 for attaching the protective tape 3 to the substrate 1. As shown in FIG. 6A, the protective tape mounter 100 includes a stage S for holding the substrate 1 by vacuum suction and a protective tape 3 attached to the surface of the substrate 1 along the outer diameter of the substrate 1 after the protective tape 3 is adhered to the surface. And a cutter K that cuts the protective tape 3 by using the cutter K.

After attaching the protective tape 3, the cutter K
6B, the cutter K is inclined at an angle of, for example, 30 to 45 degrees according to the chamfered edge of the substrate 1 as shown in FIG. 6B. Then, the cutter K is rotated at this angle along the outer diameter of the substrate 1 (see a two-dot chain line arrow shown in FIG. 1A).

In order to improve the cutter cutting ability, there is a method of heating the cutting edge of the cutter. However, when a heat-shrinkable self-peeling type is used as the protective tape 3, the temperature should be lower than the heat shrink temperature (about 70 ° C.). Maintain the temperature of the cutter blade.

By inclining the cutter K in this manner, the cut protective tape 3 can be made hard to peel off from the substrate 1. The cutter K is shown in FIG.
As shown by arrows (A) and (B) in (b), it can be moved up and down. By allowing the position of the cutter K to be moved, even if the cutting condition at the contact position with the protective tape 3 becomes poor, the cutting condition is good just by moving the position without replacing the cutter K. The location can be selected, and the replacement period of the cutter K can be greatly extended.

Next, the semiconductor manufacturing apparatus shown in FIG. 7 is a dicer 200 for dividing the substrate 1. As shown in FIG. 7A, the dicer 200 includes a cutting unit 201 for cutting the substrate 1, a spinner cleaning unit 202 for cleaning the substrate 1 after cutting, a cutting unit 201 and the spinner cleaning unit 202. A cutting water and cleaning liquid supply unit 203 for supplying a cutting and cleaning liquid (for example, a cutting and cleaning liquid mixed with carbon dioxide), and an arm 204 for transporting the substrate 1 to a predetermined position.
And an ultraviolet irradiation curing unit 205 that irradiates ultraviolet rays to the protective tape and the dicing tape that are attached to the substrate 1 after cutting the substrate 1 to cure the dicing tape.

The substrate 1 before cutting is conveyed from the dicing tape mounter with the dicing tape adhered to the back surface. The substrate 1 is transported to the cutting section 1, where it is subjected to full-cut dicing together with the protective tape.
The substrate 1 after the cutting is transported by the arm 204 to the spinner cleaning unit 202, where the cutting water and the cleaning liquid supply unit 20
Spin cleaning and drying are performed by the cleaning liquid supplied from 3.

The substrate 1 after the cleaning is transferred to the ultraviolet irradiation curing unit 205 by the arm 204. FIG. 7 (b)
As shown in FIG. 2, the ultraviolet irradiation curing unit 205 is provided with ultraviolet irradiation lamps L on the front surface (upper side) and the back side (lower side) of the substrate 1 to be transported, respectively.
While the substrate 1 supported by a is transported on the transport belt V, the front and back surfaces of the substrate 1 are irradiated with ultraviolet rays, and the protective tape and the dicing tape are cured by the ultraviolet rays. When the dicing tape is a non-ultraviolet irradiation curing type tape, the ultraviolet irradiation lamp on the back side is unnecessary.

When the protective tape is of the type cured by irradiation with ultraviolet light,
After the full-cut dicing, a predetermined amount of ultraviolet light is irradiated in the ultraviolet irradiation curing unit 205 in the dicer 200 to sufficiently cure the adhesive and sufficiently reduce the adhesive strength.

When the protective tape has a surfactant-containing adhesive, after the full-cut dicing, the base film is subjected to heat-shrinkage self-peeling by spraying hot pure water at 80 ° C. to 100 ° C. in the spinner cleaning section 202. Subsequently, the surfactant-containing adhesive is removed from the surface of the chip component and washed with pure water. At this time, the cleaning effect can be further enhanced by adding 5% or less of isopropyl alcohol to the pure water.

By using such a diider 200, the steps from dividing the substrate 1 on which the protective tape and the dicing tape are adhered to cleaning the substrate 1 and curing the protective tape and the dicing tape by irradiation of ultraviolet rays are automatically performed. It becomes possible. After the protective tape and the dicing tape are cured, the conveyor belt V automatically conveys the tape to the next die bonder.

The semiconductor manufacturing apparatus shown in FIG. 8 is a die bonder 300 for mounting a chip component formed by dividing a substrate into a predetermined package member. Substrate 1 divided by dicer 200 described above (see FIG. 7)
Is transported to the die bonder 300 while being supported by the support ring 1a.

The die bonder 300 includes a lead frame stocker 301 or a hollow package stocker (not shown) for storing a package member such as the lead frame 20 or a hollow package (not shown), and a lead frame 20 or a hollow package stocker. Dispense nozzle D for applying paste material to predetermined position of package
And a collet C ′ for mounting the chip component 10 at a predetermined position of the lead frame 20 or the hollow package to be conveyed, and a suction for blowing hot air to the mounted chip component 10 and removing the protective tape by vacuum suction. A peeling mechanism.

A protective tape 3 is adhered to the surface of each chip component 10 of the substrate 1 conveyed from the dicer 200 (see FIG. 7). To pick up. The pickup of the chip component 10 by the collet C ′ and the conveyance of the lead frame 20 or the hollow package are synchronized, and the chip component 10 is sequentially mounted on the die pad of the lead frame 20 or the hollow package via the paste material.

Immediately after mounting, clean hot air (about 100 ° C.) of N ₂ is blown onto the chip component 10. Thus, the protective tape 3 attached to the surface of the chip component 10 self-shrinks due to heat. By performing vacuum suction in this state, the self-peeled protective tape 3 can be sucked and peeled from the chip component 10. In the case of a hollow package having poor heat conduction, it is preferable to preheat the suction / peeling mechanism to about 50 ° C.

The die bonder 300 includes a step of peeling off the protective tape 3 immediately after performing die bonding.
It is used when applying the flow shown in (1).

In the case of a single hollow package using ceramics or a mold resin material, a carrying holder for holding a plurality of the hollow packages is prepared, and a plurality of hollow packages are held in the carrying holder. , It is possible to perform the same transfer as the lead frame 20.

In the case where leads of a plurality of hollow packages are connected to form a lead frame, a general 4
The lead frame 20 may be transported in the same manner as the lead frame 20 made of a two-alloy or steel material, and the lead may be trimmed / formed in a later step to perform individual measurement.

Next, the semiconductor manufacturing apparatus shown in FIG. 9 is a heating path 400 for curing a paste material for bonding the chip component 10 to a package member such as the lead frame 20 or a hollow package. The heating path 400 has a function of peeling off the protective tape 3 immediately before heating for curing the paste material for bonding the chip component 10.

Therefore, this heating path 400 is used when the flow shown in FIG. 1 is applied, in which the protective tape 3 is still attached after the die bonding step and the peeling is performed in the subsequent paste material curing step. Used.

The lead frame 20 or the hollow package on which the chip component 10 with the protective tape 3 stuck on the surface is carried into the heating path 400 by the conveyor belt V. Immediately after the loading, preheating (about 50 ° C.) is performed by heating with the heater H1, and the heater H1
Clean N ₂ hot air heated by
C.) is sprayed on the protective tape 3. The protection tape 3 self-shrinks due to the hot air, and the protection tape 3 can be separated from the surface of the chip component 10 by performing vacuum suction in this state.

In the case of a hollow package having poor heat conduction (ceramics or mold resin material), preheating by a heater H1 is necessary. However, in the case of a lead frame 20 made of 42 alloy material or steel material having good heat conduction, the heater is not necessarily used. No preheating by H1 is required.

The lead frame 20 or the hollow package is continuously conveyed, and the paste material is cured by the next heater H2. Thus, the peeling of the protective tape 3 and the curing of the paste material can be continuously performed while the lead frame 20 or the hollow package is being conveyed.

Next, the semiconductor manufacturing apparatus shown in FIG. 10 is a wire bonder 500 for electrically wiring the chip component 10 mounted on the lead frame 20 or the hollow package and the lead frame 20 or the hollow package. The wire bonder 500 has a mechanism for peeling off the protective tape 3 attached to the surface of the chip component 10,
A preheating portion 501 of the chip component 10 and a column portion 502 for wiring the bonding wire W are provided.

[0093] In such a wire bonder 500, the protective tape 3 is peeled off immediately before the wire bond.
It is used when the flow shown in FIG. 1 is applied.

The lead frame 20 or the hollow package on which the chip component 10 with the protective tape 3 stuck on the surface is loaded into the wire bonder 500 by the transport belt V. And this pre-heating section 5
01 is heated to about 50 ° C. and is heated by a heater H using clean N ₂ hot air (about 100 ° C.).
C.) onto the protective tape 3.

The acrylic adhesive of the ultraviolet radiation-curable protective tape 3 has improved heat resistance when cured by irradiation with ultraviolet light, and thus has good releasability even when heated to about 100 ° C.

In the case of a hollow package having poor heat conduction (ceramics or mold resin material), the
It is necessary to preheat with the first heater H, but in the case of the lead frame 20 made of a 42 alloy material or a steel material having good heat conductivity, the preheating with the heater H of the preheating unit 501 is not necessarily required.

The hot air causes the protective tape 3 to self-shrink, and in this state, the protective tape 3 can be easily peeled off from the surface of the chip component 10 by performing vacuum suction.
The chip component 10 from which the protective tape 3 has been peeled off is further conveyed and further heated to a predetermined high temperature (150 ° C. to 250 ° C.) by the heater H in the column portion 502. And
The bonding wire W is routed between the chip component 10 and the lead frame 20 or the hollow package by the capillary D to perform wiring.

By using such a wire bonder 500, even if the protective tape 3 is applied to the surface of the chip component 10 immediately before wire bonding, the protective tape 3 can be automatically peeled immediately before wire bonding. Becomes

At this time, the heat-shrinkable self-peeling protective tape 3
It is premised that the curing treatment is performed using a paste material such as a low-temperature-curable paste material at 70 ° C. or lower, an ultraviolet-ray-curable paste material, and a moisture-curable paste material so as not to peel off.

In the case of performing continuous production of semiconductor devices using each of the above-described manufacturing apparatuses, a stocker may be provided in front of a manufacturing apparatus having a low throughput, or a plurality of manufacturing apparatuses may be provided in parallel with an automatic transfer apparatus. They may be arranged so as not to lower the overall throughput.

In the present embodiment, the manufacturing method and the manufacturing apparatus have been mainly described by taking a silicon semiconductor device as an example, but the same applies to the manufacture of a compound semiconductor device such as gallium arsenide.

[0102]

As described above, according to the semiconductor device manufacturing method and the semiconductor manufacturing apparatus of the present invention, the following effects can be obtained. In other words, after the operation inspection of the functional element, at least the respective steps from the pasting of the protective tape to the back grinding, dicing, die bonding, wire bonding, and packaging can be continuously performed, and the production yield can be improved. Becomes

Further, when using a lead frame which has been subjected to a plating process in advance, it is possible to continuously perform the operations from the operation inspection of the functional element to the assembling, trim / form, measurement and packing, thereby improving the productivity. It becomes possible.

Further, the protective tape adhered to the surface of the substrate makes it possible to protect the functional element from dust adhesion and damage, and it is not necessary to increase the clean level in the process while the protective tape is attached. In addition, continuous processing can be performed with simple equipment. In addition, since the functional element can be protected by the protective tape, a highly reliable semiconductor device can be provided.

Further, by using a heat-shrinkable protective tape as the protective tape, the protective tape can be easily and automatically peeled off without leaving any adhesive in a predetermined manufacturing apparatus, so that each process can be continued. It becomes possible.

[Brief description of the drawings]

FIG. 1 is a flowchart illustrating a method for manufacturing a semiconductor device according to an embodiment.

FIG. 2 is a schematic cross-sectional view (part 1) for explaining the manufacturing method of the embodiment.

FIG. 3 is a schematic sectional view (part 2) for explaining the manufacturing method according to the embodiment;

FIG. 4 is a schematic sectional view (part 3) for explaining the manufacturing method according to the embodiment;

FIG. 5 is a flowchart illustrating another manufacturing method.

FIG. 6 is a schematic sectional view illustrating a protective tape mounter.

FIG. 7 is a schematic diagram illustrating a dicer.

FIG. 8 is a schematic diagram illustrating a die bonder.

FIG. 9 is a schematic diagram illustrating a heating furnace.

FIG. 10 is a schematic diagram illustrating a wire bonder.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 Functional element 3 Protective tape 4
Dicing sheet 10 Chip component 20 Lead frame 30
Hollow package 100 Protective tape mounter 200 Dicer 300 Die bonder 400 Heating furnace 500
Wire bonder

Claims (13)

[Claims] A step of performing an operation test on a plurality of functional elements formed on the surface of the substrate; a step of attaching a protective tape to the surface of the substrate after the inspection; and protecting the functional elements with the protective tape. A step of shaving the back surface of the substrate to a predetermined thickness, a step of attaching a dicing tape to the back surface of the substrate, and a step of cutting and dividing the substrate into a plurality of functional elements to form chip components A step of picking up the chip component from the dicing tape and mounting the chip component on a predetermined package member via a predetermined paste material; a step of curing the paste material; and the terminal of the chip component and the package member. A wiring process; and a process of sealing the chip component to form a package. The process between these processes is performed continuously through an automatic transport mechanism. A method of manufacturing a semiconductor device. 2. The method according to claim 1, wherein the adhesive of the protective tape contains a surfactant. 3. The method of manufacturing a semiconductor device according to claim 1, wherein said protective tape is of a fired-peeling type by heating. 4. The method according to claim 1, wherein the protective tape is of a self-shrink type by heating. 5. A step of performing an operation inspection of a plurality of functional elements formed on the surface of the substrate, and a step of attaching a protective tape of an ultraviolet irradiation curing type and a self-peeling type to the surface of the substrate after the inspection, A step of shaving the back surface of the substrate to a predetermined thickness while protecting the functional element with the protective tape; a step of attaching a dicing tape to the back surface of the substrate; and cutting the substrate to obtain a plurality of functional elements. Forming a chip component and irradiating the protection tape with ultraviolet rays to cure the chip; and picking up the chip component from the dicing tape and mounting the chip component on a predetermined package member via a predetermined paste material. A step of curing the paste material; a step of heating the protective tape to cause self-peeling; and a step of terminating the chip component and the terminal of the package member. Manufacturing a semiconductor device, comprising the steps of: a wiring step; and a step of sealing the chip component to form a package, and performing each of these steps in a continuous process via an automatic transport mechanism. Method. 6. The method according to claim 6, wherein after mounting the chip component on the package member via the paste material, the protection tape is heated and self-shrink-peeled in a heating device for curing the paste material. Item 6. The method for manufacturing a semiconductor device according to Item 5. 7. The manufacturing of a semiconductor device according to claim 5, wherein said protective tape is heated and self-shrink-peeled in a mounting device for mounting said chip component on said package member via said paste material. Method. 8. In the case where a steel material which has been subjected to plating treatment in advance is used as the package member, after the step of sealing the chip components to form a package, the steps from measurement to product packaging are also performed automatically. 6. The method for manufacturing a semiconductor device according to claim 5, wherein the method is performed by continuous processing via a transport mechanism. 9. A semiconductor manufacturing apparatus for attaching a protective tape to a surface of a substrate on which a functional element is formed, wherein the adhesive is attached to the surface of the substrate for attaching the protective tape larger than the area of the surface of the substrate. Means, cutting means for cutting the protective tape attached by the attaching means along the outer diameter of the substrate, and moving means for moving a contact position between the cutting means and the protective tape. A semiconductor manufacturing apparatus. 10. A semiconductor manufacturing apparatus for cutting a substrate having an ultraviolet irradiation-curable protective tape attached to a front surface thereof and an ultraviolet irradiation-curable dicing tape attached to a back surface thereof, wherein the protective tape and the protective tape are cut. A semiconductor manufacturing apparatus, comprising: an ultraviolet irradiation means for irradiating ultraviolet rays to the front and back surfaces of the substrate after cutting the substrate to cure the protective tape and the dicing tape. 11. A semiconductor manufacturing apparatus for mounting a chip component having a protective tape adhered to a surface thereof on a predetermined package member, comprising: mounting means for mounting the chip component on a predetermined position of the package member. Heating means for heating the protective tape after the mounting of the chip component by the mounting means; suction-peeling means for sucking the self-contracted protective tape heated by the heating means and peeling off the surface of the chip component; A semiconductor manufacturing apparatus comprising: 12. A semiconductor manufacturing apparatus for heating and curing a paste material for bonding a chip component having a protective tape adhered to a surface thereof and a predetermined package member, comprising: a transport unit configured to transport the package member; Heating means for heating the protection tape during conveyance by the conveyance means, and suction-peeling means for sucking the self-contracted protection tape heated by the heating means and peeling off the surface of the chip component A semiconductor manufacturing apparatus characterized by the above-mentioned. 13. A semiconductor manufacturing apparatus for electrically wiring a chip component having a protective tape adhered to a surface thereof and a terminal of a predetermined package member, wherein the semiconductor device transports the package member on which the chip component is mounted. Conveying means, heating means for heating the protective tape during conveyance by the conveying means, suction-peeling means for suctioning the self-contracted protective tape heated by the heating means and peeling off from the surface of the chip component, A semiconductor manufacturing apparatus comprising: wiring means for electrically wiring the chip component after the protective tape is peeled off and the terminal of the package member.