JPS6196775A - 光起電力装置 - Google Patents
光起電力装置Info
- Publication number
- JPS6196775A JPS6196775A JP59217854A JP21785484A JPS6196775A JP S6196775 A JPS6196775 A JP S6196775A JP 59217854 A JP59217854 A JP 59217854A JP 21785484 A JP21785484 A JP 21785484A JP S6196775 A JPS6196775 A JP S6196775A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode layer
- type
- transparent electrode
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59217854A JPS6196775A (ja) | 1984-10-17 | 1984-10-17 | 光起電力装置 |
| US06/787,987 US4689438A (en) | 1984-10-17 | 1985-10-16 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59217854A JPS6196775A (ja) | 1984-10-17 | 1984-10-17 | 光起電力装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6196775A true JPS6196775A (ja) | 1986-05-15 |
| JPH0564472B2 JPH0564472B2 (OSRAM) | 1993-09-14 |
Family
ID=16710806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59217854A Granted JPS6196775A (ja) | 1984-10-17 | 1984-10-17 | 光起電力装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6196775A (OSRAM) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63456A (ja) * | 1986-06-20 | 1988-01-05 | Tdk Corp | 太陽電池用透明導岩膜の製造方法 |
| JPH02111080A (ja) * | 1988-10-20 | 1990-04-24 | Mitsubishi Heavy Ind Ltd | 非晶質薄膜太陽電池 |
| US5413959A (en) * | 1992-09-14 | 1995-05-09 | Sayno Electric Co., Ltd. | Method of modifying transparent conductive oxide film including method of manufacturing photovoltaic device |
| JP2862174B2 (ja) * | 1987-05-22 | 1999-02-24 | グラステツク・ソーラー・インコーポレーテツド | 太陽電池用基板 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789265A (en) * | 1980-11-26 | 1982-06-03 | Asahi Chem Ind Co Ltd | Photo electromotive element |
| JPS59161882A (ja) * | 1983-03-07 | 1984-09-12 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| JPS59161881A (ja) * | 1983-03-07 | 1984-09-12 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
-
1984
- 1984-10-17 JP JP59217854A patent/JPS6196775A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5789265A (en) * | 1980-11-26 | 1982-06-03 | Asahi Chem Ind Co Ltd | Photo electromotive element |
| JPS59161882A (ja) * | 1983-03-07 | 1984-09-12 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
| JPS59161881A (ja) * | 1983-03-07 | 1984-09-12 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63456A (ja) * | 1986-06-20 | 1988-01-05 | Tdk Corp | 太陽電池用透明導岩膜の製造方法 |
| JP2862174B2 (ja) * | 1987-05-22 | 1999-02-24 | グラステツク・ソーラー・インコーポレーテツド | 太陽電池用基板 |
| JPH02111080A (ja) * | 1988-10-20 | 1990-04-24 | Mitsubishi Heavy Ind Ltd | 非晶質薄膜太陽電池 |
| US5413959A (en) * | 1992-09-14 | 1995-05-09 | Sayno Electric Co., Ltd. | Method of modifying transparent conductive oxide film including method of manufacturing photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0564472B2 (OSRAM) | 1993-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4317844A (en) | Semiconductor device having a body of amorphous silicon and method of making the same | |
| US4064521A (en) | Semiconductor device having a body of amorphous silicon | |
| US4773942A (en) | Flexible photovoltaic device | |
| US20080105299A1 (en) | Front electrode with thin metal film layer and high work-function buffer layer for use in photovoltaic device and method of making same | |
| JP3801342B2 (ja) | 太陽電池用基板、その製造方法及び半導体素子 | |
| US4005468A (en) | Semiconductor photoelectric device with plural tin oxide heterojunctions and common electrical connection | |
| JPH0658971B2 (ja) | 光起電力素子の製造方法 | |
| JPS6196775A (ja) | 光起電力装置 | |
| KR102412774B1 (ko) | 투명태양전지 기반의 광전기화학전지 시스템, 및 이의 제조방법 | |
| JP3025392B2 (ja) | 薄膜太陽電池とその製造方法 | |
| KR810001314B1 (ko) | 비결정 실리콘 활성영역을 갖는 반도체 장치 | |
| JPS60258975A (ja) | 光起電力装置 | |
| JPH0312973A (ja) | 非晶質薄膜太陽電池 | |
| JPH06244440A (ja) | 太陽電池 | |
| JPS6143870B2 (OSRAM) | ||
| JP3253449B2 (ja) | 光起電力装置の製造方法 | |
| KR100322709B1 (ko) | 자체전압인가형태양전지및그태양전지를채용한모듈 | |
| JPS61139074A (ja) | 光起電力素子 | |
| JP3133449B2 (ja) | 太陽電池 | |
| JPS628039B2 (OSRAM) | ||
| JP2680577B2 (ja) | 光起電力装置 | |
| JP2975751B2 (ja) | 光起電力装置 | |
| JP3049889B2 (ja) | 太陽電池とその製造方法 | |
| JPS5975679A (ja) | 光起電力装置 | |
| JP2866474B2 (ja) | 太陽電池及びその製造方法 |