JPS6194356A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6194356A
JPS6194356A JP59216657A JP21665784A JPS6194356A JP S6194356 A JPS6194356 A JP S6194356A JP 59216657 A JP59216657 A JP 59216657A JP 21665784 A JP21665784 A JP 21665784A JP S6194356 A JPS6194356 A JP S6194356A
Authority
JP
Japan
Prior art keywords
film
channel
insulating film
mask
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59216657A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0237703B2 (enrdf_load_stackoverflow
Inventor
Juro Yasui
安井 十郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59216657A priority Critical patent/JPS6194356A/ja
Publication of JPS6194356A publication Critical patent/JPS6194356A/ja
Publication of JPH0237703B2 publication Critical patent/JPH0237703B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59216657A 1984-10-16 1984-10-16 半導体装置の製造方法 Granted JPS6194356A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59216657A JPS6194356A (ja) 1984-10-16 1984-10-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59216657A JPS6194356A (ja) 1984-10-16 1984-10-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6194356A true JPS6194356A (ja) 1986-05-13
JPH0237703B2 JPH0237703B2 (enrdf_load_stackoverflow) 1990-08-27

Family

ID=16691887

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59216657A Granted JPS6194356A (ja) 1984-10-16 1984-10-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6194356A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0662816U (ja) * 1993-02-13 1994-09-06 岩谷産業株式会社 合成樹脂フイルム製手提袋

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0662816U (ja) * 1993-02-13 1994-09-06 岩谷産業株式会社 合成樹脂フイルム製手提袋

Also Published As

Publication number Publication date
JPH0237703B2 (enrdf_load_stackoverflow) 1990-08-27

Similar Documents

Publication Publication Date Title
US4642878A (en) Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions
US4826781A (en) Semiconductor device and method of preparation
JPH0479133B2 (enrdf_load_stackoverflow)
US4398964A (en) Method of forming ion implants self-aligned with a cut
JPS6041470B2 (ja) 半導体装置の製造方法
US5115296A (en) Preferential oxidization self-aligned contact technology
JPH10209293A (ja) 半導体装置の製造方法
US6489661B2 (en) Method of manufacturing semiconductor device and semiconductor device
JPS61247051A (ja) 半導体装置の製造方法
JPH06333944A (ja) 半導体装置
JPS6194356A (ja) 半導体装置の製造方法
JPH03116968A (ja) 半導体装置の製造方法
JPS63241965A (ja) 絶縁ゲ−ト型電界効果トランジスタおよびその製造方法
EP0280587A1 (en) Spacer masked VLSI process
JPS5870567A (ja) 半導体装置の製造方法
JPS59124142A (ja) 半導体装置の製造方法
JPS63318769A (ja) 半導体装置
JPS61170029A (ja) 半導体装置およびその製造方法
JPS6384161A (ja) 半導体装置の製造方法
JPS60126869A (ja) 半導体装置の製造方法
JPH0410420A (ja) 半導体集積回路の製造方法
JPH06188259A (ja) 半導体装置の製造方法
JPS58102558A (ja) 半導体装置およびその製造方法
JPS61290737A (ja) 半導体装置の製造方法
JPS62130523A (ja) 半導体装置の製造方法