JPS6191097A - 結晶成長法 - Google Patents
結晶成長法Info
- Publication number
- JPS6191097A JPS6191097A JP21288284A JP21288284A JPS6191097A JP S6191097 A JPS6191097 A JP S6191097A JP 21288284 A JP21288284 A JP 21288284A JP 21288284 A JP21288284 A JP 21288284A JP S6191097 A JPS6191097 A JP S6191097A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- layer
- crystal growth
- layers
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract description 36
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 238000002109 crystal growth method Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 238000011109 contamination Methods 0.000 abstract description 4
- 101000604097 Xenopus laevis Homeobox protein notochord Proteins 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000011819 refractory material Substances 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 15
- 238000005424 photoluminescence Methods 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21288284A JPS6191097A (ja) | 1984-10-11 | 1984-10-11 | 結晶成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21288284A JPS6191097A (ja) | 1984-10-11 | 1984-10-11 | 結晶成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6191097A true JPS6191097A (ja) | 1986-05-09 |
| JPH0526760B2 JPH0526760B2 (enrdf_load_stackoverflow) | 1993-04-19 |
Family
ID=16629818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21288284A Granted JPS6191097A (ja) | 1984-10-11 | 1984-10-11 | 結晶成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6191097A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02312222A (ja) * | 1989-05-26 | 1990-12-27 | Nec Corp | ゲルマニウム・砒化ガリウム接合の製造方法 |
| US6099640A (en) * | 1997-09-03 | 2000-08-08 | Nec Corporation | Molecular beam epitaxial growth method |
-
1984
- 1984-10-11 JP JP21288284A patent/JPS6191097A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02312222A (ja) * | 1989-05-26 | 1990-12-27 | Nec Corp | ゲルマニウム・砒化ガリウム接合の製造方法 |
| US6099640A (en) * | 1997-09-03 | 2000-08-08 | Nec Corporation | Molecular beam epitaxial growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0526760B2 (enrdf_load_stackoverflow) | 1993-04-19 |
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