JPH0458439B2 - - Google Patents
Info
- Publication number
- JPH0458439B2 JPH0458439B2 JP506686A JP506686A JPH0458439B2 JP H0458439 B2 JPH0458439 B2 JP H0458439B2 JP 506686 A JP506686 A JP 506686A JP 506686 A JP506686 A JP 506686A JP H0458439 B2 JPH0458439 B2 JP H0458439B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- superlattice
- gaas
- algaas
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 30
- 239000013078 crystal Substances 0.000 claims description 18
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 17
- 125000004433 nitrogen atom Chemical group N* 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000005424 photoluminescence Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920000379 polypropylene carbonate Polymers 0.000 description 2
- 238000002300 pressure perturbation calorimetry Methods 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP506686A JPS62167297A (ja) | 1986-01-16 | 1986-01-16 | エピタキシヤル結晶 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP506686A JPS62167297A (ja) | 1986-01-16 | 1986-01-16 | エピタキシヤル結晶 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62167297A JPS62167297A (ja) | 1987-07-23 |
| JPH0458439B2 true JPH0458439B2 (enrdf_load_stackoverflow) | 1992-09-17 |
Family
ID=11601013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP506686A Granted JPS62167297A (ja) | 1986-01-16 | 1986-01-16 | エピタキシヤル結晶 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62167297A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63208296A (ja) * | 1987-02-24 | 1988-08-29 | Sharp Corp | 半導体装置 |
| US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
-
1986
- 1986-01-16 JP JP506686A patent/JPS62167297A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62167297A (ja) | 1987-07-23 |
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