JPS6188567A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6188567A
JPS6188567A JP59209876A JP20987684A JPS6188567A JP S6188567 A JPS6188567 A JP S6188567A JP 59209876 A JP59209876 A JP 59209876A JP 20987684 A JP20987684 A JP 20987684A JP S6188567 A JPS6188567 A JP S6188567A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
wafer
compound semiconductor
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59209876A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033933B2 (enrdf_load_stackoverflow
Inventor
Tsukasa Onodera
司 小野寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59209876A priority Critical patent/JPS6188567A/ja
Priority to KR1019850007310A priority patent/KR900000584B1/ko
Priority to DE8585307129T priority patent/DE3581159D1/de
Priority to EP85307129A priority patent/EP0178133B1/en
Publication of JPS6188567A publication Critical patent/JPS6188567A/ja
Priority to US07/158,043 priority patent/US4791471A/en
Publication of JPH033933B2 publication Critical patent/JPH033933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59209876A 1984-07-11 1984-10-08 半導体装置 Granted JPS6188567A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59209876A JPS6188567A (ja) 1984-10-08 1984-10-08 半導体装置
KR1019850007310A KR900000584B1 (ko) 1984-07-11 1985-10-04 반도체 집적회로 장치
DE8585307129T DE3581159D1 (de) 1984-10-08 1985-10-04 Halbleiteranordnung mit integrierter schaltung.
EP85307129A EP0178133B1 (en) 1984-10-08 1985-10-04 Semiconductor integrated circuit device
US07/158,043 US4791471A (en) 1984-10-08 1988-02-16 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59209876A JPS6188567A (ja) 1984-10-08 1984-10-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS6188567A true JPS6188567A (ja) 1986-05-06
JPH033933B2 JPH033933B2 (enrdf_load_stackoverflow) 1991-01-21

Family

ID=16580104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59209876A Granted JPS6188567A (ja) 1984-07-11 1984-10-08 半導体装置

Country Status (1)

Country Link
JP (1) JPS6188567A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216394A (ja) * 1993-01-14 1994-08-05 Nec Corp 電界効果型トランジスタ
US5698888A (en) * 1995-04-24 1997-12-16 Nec Corporation Compound semiconductor field effect transistor free from piezoelectric effects regardless of orientation of gate electrode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145168A (ja) * 1982-02-24 1983-08-29 Fujitsu Ltd 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145168A (ja) * 1982-02-24 1983-08-29 Fujitsu Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06216394A (ja) * 1993-01-14 1994-08-05 Nec Corp 電界効果型トランジスタ
US5442227A (en) * 1993-01-14 1995-08-15 Nec Corporation Field effect transistor having a low threshold voltage shift
US5698888A (en) * 1995-04-24 1997-12-16 Nec Corporation Compound semiconductor field effect transistor free from piezoelectric effects regardless of orientation of gate electrode

Also Published As

Publication number Publication date
JPH033933B2 (enrdf_load_stackoverflow) 1991-01-21

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