JPS6187339A - リン化インジウム結晶のエツチング方法 - Google Patents

リン化インジウム結晶のエツチング方法

Info

Publication number
JPS6187339A
JPS6187339A JP59208089A JP20808984A JPS6187339A JP S6187339 A JPS6187339 A JP S6187339A JP 59208089 A JP59208089 A JP 59208089A JP 20808984 A JP20808984 A JP 20808984A JP S6187339 A JPS6187339 A JP S6187339A
Authority
JP
Japan
Prior art keywords
etching
mixing ratio
hydrogen peroxide
inp
phosphoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59208089A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527972B2 (enExample
Inventor
Takashi Udagawa
隆 宇田川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59208089A priority Critical patent/JPS6187339A/ja
Publication of JPS6187339A publication Critical patent/JPS6187339A/ja
Publication of JPH0527972B2 publication Critical patent/JPH0527972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Weting (AREA)
JP59208089A 1984-10-05 1984-10-05 リン化インジウム結晶のエツチング方法 Granted JPS6187339A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59208089A JPS6187339A (ja) 1984-10-05 1984-10-05 リン化インジウム結晶のエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59208089A JPS6187339A (ja) 1984-10-05 1984-10-05 リン化インジウム結晶のエツチング方法

Publications (2)

Publication Number Publication Date
JPS6187339A true JPS6187339A (ja) 1986-05-02
JPH0527972B2 JPH0527972B2 (enExample) 1993-04-22

Family

ID=16550452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59208089A Granted JPS6187339A (ja) 1984-10-05 1984-10-05 リン化インジウム結晶のエツチング方法

Country Status (1)

Country Link
JP (1) JPS6187339A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520045B2 (ja) * 2007-03-27 2014-06-11 Ｊｘ日鉱日石金属株式会社 エピタキシャル成長用基板及びエピタキシャル成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520045B2 (ja) * 2007-03-27 2014-06-11 Ｊｘ日鉱日石金属株式会社 エピタキシャル成長用基板及びエピタキシャル成長方法

Also Published As

Publication number Publication date
JPH0527972B2 (enExample) 1993-04-22

Similar Documents

Publication Publication Date Title
JPS62106631A (ja) 選択性エツチング剤
DE3241959C2 (enExample)
JPH077004A (ja) 半導体エッチング液，半導体エッチング方法，及びＧａＡｓ面の判定方法
DE10254611A1 (de) Kristalloszillator und Verfahren zu dessen Herstellung
JPS6187339A (ja) リン化インジウム結晶のエツチング方法
JPS5588322A (en) Treatment of semiconductor substrate
KR100692122B1 (ko) 평판디스플레이 금속 전극용 식각액 조성물
DE2149566B2 (de) Verfahren zur Herstellung einer integrierten Halbleiterschaltung, deren Schaltungselemente durch dielektrisches Material voneinander isoliert sind
KR100444101B1 (ko) 정자파 소자 및 그 제조방법
JPS6210311B2 (enExample)
JPH01248524A (ja) 半導体装置とその製造方法
JPS6366414B2 (enExample)
KR0155795B1 (ko) 고선택비를 갖는 식각액 및 그 제조방법
JPH0748425B2 (ja) マイクロ波素子
JPS6216276B2 (enExample)
KR100205439B1 (ko) 실리콘 습식 식각방법
JPS61207586A (ja) 二酸化シリコン膜のエツチング液
DE19922784A1 (de) Magnetischer Granat-Einkristallfilm mit niedrigem Bleigehalt, Verfahren zur Herstellung desselben und denselben aufweisende magnetostatische Wellenvorrichtung
JPS54117690A (en) Production of semiconductor device
JPS62182200A (ja) 化合物半導体の化学エツチング法
JPH0727911A (ja) 誘電体光学材料の微細加工方法
JPS59165467A (ja) 半導体装置およびその製造方法
JPS60176999A (ja) 半絶縁性３−５族化合物半導体基板結晶材料及びその製造方法
JPS55108990A (en) Production of magnetic bubble material
JPS63182850A (ja) 光半導体装置の製造方法