JPS6187339A - リン化インジウム結晶のエツチング方法 - Google Patents

リン化インジウム結晶のエツチング方法

Info

Publication number
JPS6187339A
JPS6187339A JP20808984A JP20808984A JPS6187339A JP S6187339 A JPS6187339 A JP S6187339A JP 20808984 A JP20808984 A JP 20808984A JP 20808984 A JP20808984 A JP 20808984A JP S6187339 A JPS6187339 A JP S6187339A
Authority
JP
Japan
Prior art keywords
etching
mixing ratio
hydrogen peroxide
inp
phosphoric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20808984A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527972B2 (enExample
Inventor
Takashi Udagawa
隆 宇田川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP20808984A priority Critical patent/JPS6187339A/ja
Publication of JPS6187339A publication Critical patent/JPS6187339A/ja
Publication of JPH0527972B2 publication Critical patent/JPH0527972B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP20808984A 1984-10-05 1984-10-05 リン化インジウム結晶のエツチング方法 Granted JPS6187339A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20808984A JPS6187339A (ja) 1984-10-05 1984-10-05 リン化インジウム結晶のエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20808984A JPS6187339A (ja) 1984-10-05 1984-10-05 リン化インジウム結晶のエツチング方法

Publications (2)

Publication Number Publication Date
JPS6187339A true JPS6187339A (ja) 1986-05-02
JPH0527972B2 JPH0527972B2 (enExample) 1993-04-22

Family

ID=16550452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20808984A Granted JPS6187339A (ja) 1984-10-05 1984-10-05 リン化インジウム結晶のエツチング方法

Country Status (1)

Country Link
JP (1) JPS6187339A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520045B2 (ja) * 2007-03-27 2014-06-11 Ｊｘ日鉱日石金属株式会社 エピタキシャル成長用基板及びエピタキシャル成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520045B2 (ja) * 2007-03-27 2014-06-11 Ｊｘ日鉱日石金属株式会社 エピタキシャル成長用基板及びエピタキシャル成長方法

Also Published As

Publication number Publication date
JPH0527972B2 (enExample) 1993-04-22

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