JPS6186942A - 回転磁界を用いた放電反応装置 - Google Patents

回転磁界を用いた放電反応装置

Info

Publication number
JPS6186942A
JPS6186942A JP59207530A JP20753084A JPS6186942A JP S6186942 A JPS6186942 A JP S6186942A JP 59207530 A JP59207530 A JP 59207530A JP 20753084 A JP20753084 A JP 20753084A JP S6186942 A JPS6186942 A JP S6186942A
Authority
JP
Japan
Prior art keywords
electrode
magnetic field
rotating magnetic
discharge
discharge reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59207530A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346172B2 (enrdf_load_stackoverflow
Inventor
Kiyoushiyoku Kin
金　京植
Uirukinson Ooen
オーエン　ウイルキンソン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP59207530A priority Critical patent/JPS6186942A/ja
Priority to KR1019850006330A priority patent/KR910000508B1/ko
Priority to DE8585306186T priority patent/DE3580953D1/de
Priority to EP85306186A priority patent/EP0173583B1/en
Publication of JPS6186942A publication Critical patent/JPS6186942A/ja
Priority to US07/110,622 priority patent/US4829215A/en
Publication of JPH0346172B2 publication Critical patent/JPH0346172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP59207530A 1984-08-31 1984-10-03 回転磁界を用いた放電反応装置 Granted JPS6186942A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59207530A JPS6186942A (ja) 1984-10-03 1984-10-03 回転磁界を用いた放電反応装置
KR1019850006330A KR910000508B1 (ko) 1984-08-31 1985-08-30 동적자계를 이용한 방전 반응장치
DE8585306186T DE3580953D1 (de) 1984-08-31 1985-08-30 Entladungsvorrichtung.
EP85306186A EP0173583B1 (en) 1984-08-31 1985-08-30 Discharge apparatus
US07/110,622 US4829215A (en) 1984-08-31 1987-10-20 Discharge reaction apparatus utilizing dynamic magnetic field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59207530A JPS6186942A (ja) 1984-10-03 1984-10-03 回転磁界を用いた放電反応装置

Publications (2)

Publication Number Publication Date
JPS6186942A true JPS6186942A (ja) 1986-05-02
JPH0346172B2 JPH0346172B2 (enrdf_load_stackoverflow) 1991-07-15

Family

ID=16541244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59207530A Granted JPS6186942A (ja) 1984-08-31 1984-10-03 回転磁界を用いた放電反応装置

Country Status (1)

Country Link
JP (1) JPS6186942A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62118429U (enrdf_load_stackoverflow) * 1986-01-20 1987-07-28
JPS63142636A (ja) * 1986-12-05 1988-06-15 Anelva Corp 真空装置
JPS63277778A (ja) * 1987-05-08 1988-11-15 Anelva Corp 放電化学反応装置の回転磁界発生装置
JPH02156089A (ja) * 1988-12-09 1990-06-15 Shimadzu Corp プラズマ付着装置
JPH02237117A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 半導体処理装置
US5695597A (en) * 1992-11-11 1997-12-09 Mitsubishi Denki Kabushiki Kaisha Plasma reaction apparatus
US5880034A (en) * 1997-04-29 1999-03-09 Princeton University Reduction of semiconductor structure damage during reactive ion etching
WO2001073159A1 (fr) * 2000-03-27 2001-10-04 Mitsubishi Heavy Industries, Ltd. Procede et appareil permettant de former un film metallique
JPWO2014199421A1 (ja) * 2013-06-14 2017-02-23 国立大学法人東北大学 プラズマ発生装置、プラズマ処理装置、プラズマ発生方法およびプラズマ処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143371A (en) * 1974-10-12 1976-04-14 Daido Steel Co Ltd Netsushorihohooyobi netsushorisochi
JPS5645761A (en) * 1979-09-25 1981-04-25 Mitsubishi Electric Corp Plasma reaction apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5143371A (en) * 1974-10-12 1976-04-14 Daido Steel Co Ltd Netsushorihohooyobi netsushorisochi
JPS5645761A (en) * 1979-09-25 1981-04-25 Mitsubishi Electric Corp Plasma reaction apparatus

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62118429U (enrdf_load_stackoverflow) * 1986-01-20 1987-07-28
JPS63142636A (ja) * 1986-12-05 1988-06-15 Anelva Corp 真空装置
JPS63277778A (ja) * 1987-05-08 1988-11-15 Anelva Corp 放電化学反応装置の回転磁界発生装置
JPH02156089A (ja) * 1988-12-09 1990-06-15 Shimadzu Corp プラズマ付着装置
JPH02237117A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 半導体処理装置
US5695597A (en) * 1992-11-11 1997-12-09 Mitsubishi Denki Kabushiki Kaisha Plasma reaction apparatus
US5880034A (en) * 1997-04-29 1999-03-09 Princeton University Reduction of semiconductor structure damage during reactive ion etching
WO2001073159A1 (fr) * 2000-03-27 2001-10-04 Mitsubishi Heavy Industries, Ltd. Procede et appareil permettant de former un film metallique
US6656540B2 (en) 2000-03-27 2003-12-02 Mitsubishi Heavy Industries, Ltd. Method for forming metallic film and apparatus for forming the same
JPWO2014199421A1 (ja) * 2013-06-14 2017-02-23 国立大学法人東北大学 プラズマ発生装置、プラズマ処理装置、プラズマ発生方法およびプラズマ処理方法

Also Published As

Publication number Publication date
JPH0346172B2 (enrdf_load_stackoverflow) 1991-07-15

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Legal Events

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