JPS6186497A - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPS6186497A
JPS6186497A JP20947684A JP20947684A JPS6186497A JP S6186497 A JPS6186497 A JP S6186497A JP 20947684 A JP20947684 A JP 20947684A JP 20947684 A JP20947684 A JP 20947684A JP S6186497 A JPS6186497 A JP S6186497A
Authority
JP
Japan
Prior art keywords
susceptor
distance
phase growth
nozzles
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20947684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0310596B2 (enrdf_load_stackoverflow
Inventor
Masayuki Nozawa
野沢　昌幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP20947684A priority Critical patent/JPS6186497A/ja
Publication of JPS6186497A publication Critical patent/JPS6186497A/ja
Publication of JPH0310596B2 publication Critical patent/JPH0310596B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP20947684A 1984-10-05 1984-10-05 気相成長装置 Granted JPS6186497A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20947684A JPS6186497A (ja) 1984-10-05 1984-10-05 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20947684A JPS6186497A (ja) 1984-10-05 1984-10-05 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6186497A true JPS6186497A (ja) 1986-05-01
JPH0310596B2 JPH0310596B2 (enrdf_load_stackoverflow) 1991-02-14

Family

ID=16573476

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20947684A Granted JPS6186497A (ja) 1984-10-05 1984-10-05 気相成長装置

Country Status (1)

Country Link
JP (1) JPS6186497A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027746A (en) * 1988-03-22 1991-07-02 U.S. Philips Corporation Epitaxial reactor having a wall which is protected from deposits
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132531A (en) * 1974-07-16 1976-03-19 Solvay Arukiruasetofuenonno seiho
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132531A (en) * 1974-07-16 1976-03-19 Solvay Arukiruasetofuenonno seiho
JPS5480071A (en) * 1977-12-09 1979-06-26 Hitachi Ltd Vapor growth method for semiconductor layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027746A (en) * 1988-03-22 1991-07-02 U.S. Philips Corporation Epitaxial reactor having a wall which is protected from deposits
US5160545A (en) * 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition

Also Published As

Publication number Publication date
JPH0310596B2 (enrdf_load_stackoverflow) 1991-02-14

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