JPH0310597B2 - - Google Patents

Info

Publication number
JPH0310597B2
JPH0310597B2 JP59209478A JP20947884A JPH0310597B2 JP H0310597 B2 JPH0310597 B2 JP H0310597B2 JP 59209478 A JP59209478 A JP 59209478A JP 20947884 A JP20947884 A JP 20947884A JP H0310597 B2 JPH0310597 B2 JP H0310597B2
Authority
JP
Japan
Prior art keywords
base plate
susceptor assembly
gas
bell gear
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59209478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6186499A (ja
Inventor
Masayuki Nozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP20947884A priority Critical patent/JPS6186499A/ja
Publication of JPS6186499A publication Critical patent/JPS6186499A/ja
Publication of JPH0310597B2 publication Critical patent/JPH0310597B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP20947884A 1984-10-05 1984-10-05 気相成長装置 Granted JPS6186499A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20947884A JPS6186499A (ja) 1984-10-05 1984-10-05 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20947884A JPS6186499A (ja) 1984-10-05 1984-10-05 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6186499A JPS6186499A (ja) 1986-05-01
JPH0310597B2 true JPH0310597B2 (enrdf_load_stackoverflow) 1991-02-14

Family

ID=16573507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20947884A Granted JPS6186499A (ja) 1984-10-05 1984-10-05 気相成長装置

Country Status (1)

Country Link
JP (1) JPS6186499A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019015U (enrdf_load_stackoverflow) * 1973-06-14 1975-03-03

Also Published As

Publication number Publication date
JPS6186499A (ja) 1986-05-01

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