JPS6186497A - Gas phase growth apparatus - Google Patents
Gas phase growth apparatusInfo
- Publication number
- JPS6186497A JPS6186497A JP20947684A JP20947684A JPS6186497A JP S6186497 A JPS6186497 A JP S6186497A JP 20947684 A JP20947684 A JP 20947684A JP 20947684 A JP20947684 A JP 20947684A JP S6186497 A JPS6186497 A JP S6186497A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- distance
- phase growth
- nozzles
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明にシリコン等の半導体物質基板（以下ウェハとい
う）にシリコン結晶等を気相成長させるバレル型の気相
成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field to which the Invention Pertains] The present invention relates to a barrel-type vapor phase growth apparatus for vapor phase growing silicon crystals and the like onto a semiconductor material substrate (hereinafter referred to as a wafer) such as silicon.
従来のバレル型気相成長装置はサセプタが軸方向に若干
勾配を有しているが、サセプタ上方に設けた反応ガスを
供給する複数本のノズルはサセプタ回転中心から一定位
置に孔をあけていたため、サセプタに取付けた多数のウ
ェハに対する反応ガスの接触が一様でなく、この友め気
相成長の膜厚が均一にならない欠点があった。In conventional barrel-type vapor phase growth equipment, the susceptor has a slight slope in the axial direction, but the multiple nozzles installed above the susceptor to supply the reaction gas have holes drilled at fixed positions from the center of rotation of the susceptor. However, there is a drawback that the contact of the reaction gas to the large number of wafers attached to the susceptor is not uniform, and the film thickness of the vapor phase epitaxy is not uniform.
本発明はこのような欠点を除去したものでその目的は、
サセプタに取付けた多数のウェハに対する反応ガスの接
触をより一様にし、気相成長の膜厚を均一にして品質を
高め得る気相成長装置を提供することにある。The present invention eliminates these drawbacks, and its purpose is to:
It is an object of the present invention to provide a vapor phase growth apparatus which can improve the quality by making the contact of a reaction gas more uniform to a large number of wafers attached to a susceptor and by making the film thickness of the vapor phase growth uniform.
本発明の気相成長装置は、軸方向に勾配を有するバレル
型のサセプタを備えた気相成長装置において、軸心から
の距離が短かｒ側のサセプタ端部側に、ほぼサセプタの
表面に沿って軸方向へ反応ガスを供給する複数本のノズ
ルを設けると共に、該ノズル孔のサセプタ軸心からの距
離を変化させたことを特徴にしてＡる。The vapor phase growth apparatus of the present invention is a vapor phase growth apparatus equipped with a barrel-shaped susceptor having a slope in the axial direction. A is characterized in that a plurality of nozzles are provided for supplying a reactive gas in the axial direction along the susceptor, and the distance of the nozzle hole from the susceptor axis is varied.
以下本発明の一実施例を示した図につ論て説明する。、
第１図におりでサセプタ組立体１１は複数枚の短冊状を
したサセプタが多角形状に配置されると共に、細心に対
し勾配を有しかつ上面および下面はフタ状体に工９おお
われておりその外周には多数のウェハ１２が取付けであ
る。サセプタ組立体１１は上下のフタ状体に固着した、
セラミックス等の非金属製かつ中空の回転軸１３により
両方向へ回転されるようになされており、その外周およ
び上方は石英製のベルジャ１４によりおおわれている。An embodiment of the present invention will be explained below with reference to the drawings. ,
In the susceptor assembly 11 shown in FIG. 1, a plurality of strip-shaped susceptors are arranged in a polygonal shape, and the susceptor assembly 11 has a carefully sloped surface, and its upper and lower surfaces are covered with a lid-like body 9. A large number of wafers 12 are attached to the outer periphery. The susceptor assembly 11 is fixed to the upper and lower lid-like bodies,
It is configured to be rotated in both directions by a hollow rotating shaft 13 made of a non-metallic material such as ceramics, and its outer periphery and upper part are covered with a bell jar 14 made of quartz.
ベルジャ１４の下方にはこｎと同心かつサセプタ組立体
１１の回転を妨げない近接したわずかな隙間を有する位
置に石英製の円筒体１５があり、ベルジャ１４お工び円
筒体１５は共にステンレス鋼製のペースプレート１６上
に密接した状態で載置されている。なお円筒体１５はサ
セプタ組立体１、テベルジャ１４とサセプタ組立体】１
および円筒体】５にエフ形成される空間を反応室といい
、回転軸】３はペースプレート１６を気密ｌｌＣ貫通し
ている。ベルジャ１４の下側内周と円筒体１５の下側外
周との間にはペースプレート１６Ａ表面から金属イオン
の放出を阻止するため石英リング１９Ａが敷かれており
、この石英リング１９Ａとベースプレート１６には反応
室のガスを外部に排出するための孔１９Ｂがあけである
。回転軸】３の中心にはそれぞれ固定の内管】７お工び
外管】８の２重管が設けらｎ、内管１７からはＮ２或い
はＨ２のガスが上方に向って流れ外管１８は上端で複数
（図では２本のみ示しである）に分岐してノズル１８Ａ
になって下方にあるウニノＳ１２に向って反応ガスが流
れるようになっている。なお反応ガスの流れの細部は後
述する。Below the bell jar 14 is a cylindrical body 15 made of quartz that is concentric with the bell jar 14 and has a small gap in close proximity that does not impede the rotation of the susceptor assembly 11. Both the bell jar 14 and the cylindrical body 15 are made of stainless steel. They are placed in close contact on a pace plate 16 made of Note that the cylindrical body 15 is a susceptor assembly 1, and the cylindrical body 15 is a susceptor assembly 1.
The space formed in the cylindrical body [5] is called a reaction chamber, and the rotating shaft [3] passes through the pace plate 16 in an airtight manner. A quartz ring 19A is placed between the lower inner periphery of the bell jar 14 and the lower outer periphery of the cylindrical body 15 in order to prevent release of metal ions from the surface of the pace plate 16A. A hole 19B is provided for discharging gas from the reaction chamber to the outside. At the center of rotation axis 3, fixed inner tube 7 outer tube 8 double tubes are provided, and N2 or H2 gas flows upward from inner tube 17 and outer tube 18. The nozzle 18A branches into a plurality of nozzles (only two are shown in the figure) at the upper end.
The reactant gas flows towards the UNINO S12 located below. Note that the details of the flow of the reaction gas will be described later.
ベルジャ１４の下部外周には、これを取り囲み、ベース
プレート１６の外周に配置されたペース２０とによりベ
ルジャ１４側のみを開放した排気ダクト２１が設けられ
、この排気ダクト２１は第２図に示す排気管２２に接続
されている。排気ｌ゛クト】上には、多数のランプ２３
を有するランプハウス２４が、第２図に示す工すに、ベ
ルジャ１４を取り囲んで配置さｎている。ランプノ）ウ
ス２４の背面側にはＡ冷却流体供給部２５が形成され、
Ａ冷却流体供給部２５には不図示の送風機および冷却機
からの冷却仝気が吹き込まれ、冷却空ンプ２３お工びベ
ルジャ１４＆ｃ吹きつけてこれら八
を冷却する工うになっている。An exhaust duct 21 is provided on the outer periphery of the lower part of the bell jar 14, surrounding it and opening only on the bell jar 14 side with a pace 20 arranged on the outer periphery of the base plate 16. This exhaust duct 21 is an exhaust pipe shown in FIG. 22. Above the exhaust port are numerous lamps 23.
A lamp house 24 having a lamp housing 24 is disposed surrounding the bell jar 14 in the structure shown in FIG. A cooling fluid supply section 25 is formed on the back side of the lamp head 24,
Cooling air is blown into the A cooling fluid supply section 25 from a blower and a cooler (not shown), and is blown through the cooling air pump 23 and the bell jar 14&c to cool these parts.
ペース２０には排気ダクト２１７ｃ＠ｍして昇降および
回転機構２８が設けてあり、同機構２８に上端に腕２９
が固着され、腕２９の先端は把持具３０にエリベルジャ
１４の」外部に固着した把持部３１ ｆｃｌｌ！脱可能
に把持している。また腕２９の先端は把持具３２にエフ
Ｂ冷却流体供給部３３ｆ、取付けている。、Ｂ冷却流体
供給５３３の下端はランプハウス２４の上面に載置され
ると共に、その内壁３４には多数の孔３５があけられて
いるたｄ〕Ａ冷却流体供給部２５と同様に冷却空気がベ
ルジャ１４の上部に吹きつけられる。ここでペルジャト
１とＢ冷却流体供給部３３とは腕２９に取付けらｒして
いるｆｃぬ、同時に昇降可能であり、ベルジャ１４の下
面がノズル１８Ａの上方まで上昇した後は腕２９を旋回
させることにエリベルジャ１４お工び１３冷却流体供給
部３３を側刃へ旋回するこ２４は端部Ａお工ひＢが互論
シて回動自在に連結さｆ’Ｌ、下側中央は切離さｎる工
うになっておジ、同図に点線で示した立置に移動可能に
なっている。The pace 20 is provided with an exhaust duct 217c@m and an elevating and rotating mechanism 28, and an arm 29 is attached to the upper end of the mechanism 28.
is fixed, and the tip of the arm 29 is attached to the gripping tool 30. It is removably gripped. Furthermore, an F-B cooling fluid supply section 33f is attached to the gripping tool 32 at the tip of the arm 29. , the lower end of the B cooling fluid supply section 533 is placed on the upper surface of the lamp house 24, and its inner wall 34 is provided with a number of holes 35. It is sprayed onto the top of Belljar 14. Here, the perjacto 1 and the B cooling fluid supply section 33 are attached to the arm 29, and can be raised and lowered at the same time, and after the lower surface of the bell jar 14 rises above the nozzle 18A, the arm 29 is rotated. In particular, turning the cooling fluid supply part 33 of the Eliberja 14 to the side blade 24 means that the ends A and B are rotatably connected to each other f'L, and the lower center is separated. As the construction progresses, it can be moved to the vertical position shown by the dotted line in the figure.
Ａお工びＢ冷却流体供給部２５および３３から吹き出さ
Ｉした冷却空気はベルジャ１４の外周あ・工びランプ２
３を冷却しながら下降し、排気ｌ°タクト′
２１内に入り７ｊ （＆図の上方に示した排気管２２か
ら外部に強制的に排出さ７１．る。反応ガスの流れるノ
ズル１８Ａは図に示す工うにこの例では放射状に８本設
けてあり、先端近くには下向きの孔３６（第１図参照）
が１個あけてあり、かっこの孔３６は８本のノズル１８
Ａの２本或いは４本を組にして回転＠１３の軸心からの
距離を第３図囚。The cooling air blown out from the cooling fluid supply parts 25 and 33 is sent to the outer periphery of the bell jar 14 and the lamp 2.
3 descends while cooling the gas, enters the exhaust gas tact' 21 and is forcibly discharged to the outside from the exhaust pipe 22 shown in the upper part of the figure.The nozzle 18A through which the reaction gas flows is shown in the figure. In this example, there are eight sea urchins arranged radially, and there is a downward hole 36 near the tip (see Figure 1).
The hole 36 in parentheses has eight nozzles 18.
Use two or four of A as a set and measure the distance from the axis of rotation @13 in Figure 3.
ａにＲ１，Ｒ２で示すように、変えることに工９、軸心
に対し勾配を有するサセプタ組立体１】上に配列されて
いるウェハ１２の全体に対して反応カスがニジ均一に接
触するようにしである。なお、ノズルｘＡ本数を適宜に
定め、各々のノズル孔３６が軸方向に配列されたウェハ
１２にそれぞれ順次対応させるようにしてもよ論。As shown by R1 and R2 in Fig. 9, the susceptor assembly 1 has a slope with respect to the axial center so that the reaction residue uniformly contacts the entire wafers 12 arranged on the susceptor assembly 1. It's Nishide. Note that the number of nozzles xA may be determined as appropriate, and each nozzle hole 36 may be made to correspond sequentially to the wafers 12 arranged in the axial direction.
矢に前述した実施例の動作を説明する。昇降等の機構２
８にニジベルジャ】４とＢ冷却流体供給部３３を上昇さ
せ、次いでランプハウス２４を第２８にニジベルジャ１
４とＢ冷却流体供給部３３を下降させて第１図の状態に
する。この状態で内管１７と外管】８からＮ２ガスを噴
出して空気をパージし、空気のパージが終了した後、Ｎ
２カスにエフ前記Ｎ２ガスをパージし、次いでランプ２
３に工り加熱する。加熱によりウェハ】２が所定温度に
達すると外管１８従ってノズル１８ＡからＮ２カスと共
にｙラン等の反応ガスを噴出させることに、Ｃり気相成
長を行なう。各ノズル１８Ａの孔３６は、第３図（２）
、■に示したように、サセプタ組立体１１の回転軸心か
らの距離Ｒ１，Ｒ２が異なっているため、勾配をもって
配列されているウェハ】２の全域にわたって反応ガスが
よジ一様に接触し、均一な膜厚が得られる。The operation of the embodiment described above will be explained with reference to the arrows. Lifting mechanism 2
8 to the rainbow bell jar] 4 and B cooling fluid supply section 33, and then move the lamp house 24 to the 28th rainbow bell jar 1.
4 and B cooling fluid supply section 33 are lowered to the state shown in FIG. In this state, N2 gas is jetted out from the inner tube 17 and the outer tube 8 to purge the air, and after the air purge is completed,
Purge the above N2 gas to lamp 2, and then
Step 3 and heat. When the wafer 2 reaches a predetermined temperature by heating, a reaction gas such as y-lan is spouted from the outer tube 18 and hence the nozzle 18A together with N2 sludge, thereby performing carbon vapor phase growth. The hole 36 of each nozzle 18A is shown in FIG. 3 (2).
, ■, since the distances R1 and R2 from the rotational axis of the susceptor assembly 11 are different, the reaction gas is in uniform contact with the entire area of the wafers 2 which are arranged with an inclination. , a uniform film thickness can be obtained.
このとき内管１７からはそのままＮ２カスを噴出させる
ことに工りベルジャ１４の上部空間をＮ２カスで充満せ
しめ、もってベルジャ１４の上ＶＡ壁面の冷却と上部壁
面への反応ガスの接触を阻止する。・−そしてこルらの
ガスはベースプレート１６の穴１９Ｂから排出される。At this time, the N2 scum is directly ejected from the inner pipe 17 to fill the upper space of the bell jar 14 with N2 scum, thereby preventing the cooling of the upper VA wall surface of the bell jar 14 and the contact of the reaction gas with the upper wall surface. . -These gases are discharged from the hole 19B of the base plate 16.
このときサセプ夕組立体−１−９＝とベースプレート１
６の間に円筒体ユニ
１５があるため、ガスがサセプタ組立体に≠の下部に回
り込んでゴミを舞い上げ几り、ベルジャ１４内のガス流
を乱したりすることなく円滑に排出される。ランプ２３
による加熱と同時に送風機および冷却機からの冷却空気
は、Ａお工びＢ冷却流体供給部２５および３３の孔２６
お工び；３５分通ってベルジャ１４お工びランプ２：＜
ｖｃ吹＠つけらｎ１ランプ２３とベルジャ】４を冷却し
た後ベルジャ１４に沿って下降し、排気ダク）２１から
排気管２２により強制的に排気される。この風量は石英
ベルジャ】４の大きさによるが数】ｎｒｒ？／分から数
ｌｎｎｍ’／分と極めて大量であるが、排気ダクト２１
はベルジャ１４の下方を囲んで円周上に太き（／″また
め排気抵抗は小さく排気管２２から吸引することにより
円滑な排気が可能である。At this time, the susceptor assembly -1-9= and the base plate 1
Since there is a cylindrical unit 15 between the bell jars 14 and 6, gas flows around the susceptor assembly to the bottom of the bell jar 14, blows up dust, and is smoothly discharged without disturbing the gas flow inside the bell jar 14. . lamp 23
At the same time as heating by
Work; 35 minutes to Bellja 14 work lamp 2:<
After cooling the vc blower n1 lamp 23 and bell jar 4, it descends along the bell jar 14 and is forcibly exhausted from the exhaust duct 21 through the exhaust pipe 22. This air volume depends on the size of the quartz bell jar [4] nrr? /min to several lnnm'/min, but the exhaust duct 21
surrounds the lower part of the bell jar 14 and is thick on the circumference (/''), so the exhaust resistance is small and suction from the exhaust pipe 22 allows smooth exhaust.
一定時間気相成長が行われた後ランプ２３を消して加熱
を停止すると共に、両管］７２よび１８からＮ２カスの
みを噴出烙せて反応ガスのパージを行いながらベルジャ
１４を介してウニノ・１２を冷却し、次いでＮ２カスを
停止してＮ２カスを噴出することにエフベルジャ１４内
をＮ２ガスにする。最後にベルジャ１４等を昇降等の機
構２８、に工り上昇させると共に、ランプハウス２４ｆ
開いてウェハ１２を取り出せば一連の気相成長作業は終
了する。なふ・ベルジャ１４の洗浄が必な場合１１ベル
ジヤ１４を上昇後昇降）よび回転機構２８により側方へ
旋回させた後、下降させて台（図示せず）上に着床させ
、ベルジャ１４を把持具３ｏから離脱してか田洗浄する
。After vapor phase growth has been carried out for a certain period of time, the lamp 23 is turned off to stop the heating, and the unino 12 is cooled, and then the N2 scum is stopped and the N2 scum is spouted to turn the inside of the F-Verjar 14 into N2 gas. Finally, the bell jar 14 etc. are raised by raising and lowering the mechanism 28, and the lamp house 24f is raised.
When the wafer 12 is opened and the wafer 12 is taken out, the series of vapor phase growth operations is completed. If it is necessary to clean the bell jar 14, move the bell jar 14 up and down) and turn it to the side using the rotation mechanism 28, then lower it and place it on a stand (not shown). It is separated from the gripping tool 3o and washed.
本発明の気相成長装置は以上説明したように、ベースプ
レートを貫通して上方に伸びる回Ｅｉ＆て取付けしｎか
つ軸方向に勾配を有するバレル型のサセプタと、１：１
１心からの距離が短かい側のサセプタ端部側に、ほぼサ
セプタの表面に沿って軸方向へ反応ガスを供給する複数
本のノズルを設けると共に、該ノズル孔のサセプタ軸心
からの距離を変化させるようにｙｔ波した。As explained above, the vapor phase growth apparatus of the present invention includes a barrel-shaped susceptor that extends upwardly through the base plate, is attached to the barrel-shaped susceptor, and has a slope in the axial direction.
A plurality of nozzles are provided on the end of the susceptor on the side having a shorter distance from the susceptor center, and a plurality of nozzles are provided for supplying the reaction gas in the axial direction almost along the surface of the susceptor, and the distance of the nozzle holes from the susceptor axis is varied. I made a yt wave to make it happen.
この溝ｂ′ｉ、ＶＣよりサセプタに取付けた多数のウェ
ハは、サセプタが軸方向に勾配を有することと共にノズ
ル化が°サセプタ軸心からの距離が変化していることに
エリ反応ガスに対し一様に吻ツがっ多）量チｊ砂に接す
るため気相成長の膜厚さぽ−定でかつ、短時間（て成長
して生産性の高（へ利点を有する。A large number of wafers attached to the susceptor through the grooves b'i and VC have an axially sloped susceptor and a nozzle structure that is uniform for reactant gas because the distance from the susceptor axis changes. Since it is in contact with a large amount of sand, the thickness of the vapor-phase grown film is constant, and it grows in a short period of time, which has the advantage of high productivity.
図は本発明の一実施例を示し第１図は断面図、第２図は
第１図の２−２線断面図、第３図囚、０はノズル孔とサ
セプタの関係を示す部分拡大断面図である。
１１・・・サセプタ組立体、】２・・・ウェハ、１３・
・・回転軸、１４・・・ベルジャ、】５・・・円筒俸、
１６・・・ベースプレート、】７・・・内骨、】８・・
・外管、１８Ａ・・・ノズル、２３・・・ランプ、２４
・・・ランプハウス、２５．３３・・・（冷却流体供給
部、２８・・・昇降お工び回転礪構、３６・・・ノズル
孔。
出頭人 東芝機械株式会社
第１図
升２図
升３図The figures show one embodiment of the present invention. Figure 1 is a cross-sectional view, Figure 2 is a cross-sectional view taken along the line 2-2 in Figure 1, and Figure 3 (0) is a partially enlarged cross-section showing the relationship between the nozzle hole and the susceptor. It is a diagram. 11... Susceptor assembly, ]2... Wafer, 13...
...rotating shaft, 14... bell jar, ]5... cylindrical salary,
16... Base plate, ]7... Inner bone, ]8...
・Outer tube, 18A... Nozzle, 23... Lamp, 24
... Lamp house, 25.33... (Cooling fluid supply section, 28... Lifting and rotating structure, 36... Nozzle hole. Appearance: Toshiba Machine Co., Ltd. Figure 1, Figure 2) Figure 3
Claims (1)
気相成長装置において、軸心からの距離が短かい側のサ
セプタ端部側に、ほぼサセプタの表面に沿つて軸方向へ
反応ガスを供給する複数本のノズルを設けると共に、該
ノズル孔のサセプタ軸心からの距離を変化させたことを
特徴とする気相成長装置。 ２、サセプタ細心からノズル孔までの距離がサセプタの
軸方向に配列されるウェハの各々に対応して定められて
いることを特徴とする特許請求の範囲第１項記載の気相
成長装置。[Claims] 1. In a vapor phase growth apparatus equipped with a barrel-shaped susceptor having a slope in the axial direction, the susceptor is placed on the end side of the susceptor on the side where the distance from the axis is shorter, substantially along the surface of the susceptor. A vapor phase growth apparatus characterized in that a plurality of nozzles are provided for supplying a reaction gas in the axial direction, and the distance of the nozzle holes from the susceptor axis is varied. 2. The vapor phase growth apparatus according to claim 1, wherein the distance from the fine point of the susceptor to the nozzle hole is determined corresponding to each of the wafers arranged in the axial direction of the susceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20947684A JPS6186497A (en) | 1984-10-05 | 1984-10-05 | Gas phase growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20947684A JPS6186497A (en) | 1984-10-05 | 1984-10-05 | Gas phase growth apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6186497A true JPS6186497A (en) | 1986-05-01 |
| JPH0310596B2 JPH0310596B2 (en) | 1991-02-14 |
Family
ID=16573476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20947684A Granted JPS6186497A (en) | 1984-10-05 | 1984-10-05 | Gas phase growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6186497A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5027746A (en) * | 1988-03-22 | 1991-07-02 | U.S. Philips Corporation | Epitaxial reactor having a wall which is protected from deposits |
| US5160545A (en) * | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132531A (en) * | 1974-07-16 | 1976-03-19 | Solvay | Arukiruasetofuenonno seiho |
| JPS5480071A (en) * | 1977-12-09 | 1979-06-26 | Hitachi Ltd | Vapor growth method for semiconductor layer |
-
1984
- 1984-10-05 JP JP20947684A patent/JPS6186497A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132531A (en) * | 1974-07-16 | 1976-03-19 | Solvay | Arukiruasetofuenonno seiho |
| JPS5480071A (en) * | 1977-12-09 | 1979-06-26 | Hitachi Ltd | Vapor growth method for semiconductor layer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5027746A (en) * | 1988-03-22 | 1991-07-02 | U.S. Philips Corporation | Epitaxial reactor having a wall which is protected from deposits |
| US5160545A (en) * | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0310596B2 (en) | 1991-02-14 |
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