JPS6184867A - Ｉｇｆｅｔの製造方法 - Google Patents
Ｉｇｆｅｔの製造方法Info
- Publication number
- JPS6184867A JPS6184867A JP60214398A JP21439885A JPS6184867A JP S6184867 A JPS6184867 A JP S6184867A JP 60214398 A JP60214398 A JP 60214398A JP 21439885 A JP21439885 A JP 21439885A JP S6184867 A JPS6184867 A JP S6184867A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- region
- source
- junction
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 62
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000003071 parasitic effect Effects 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65510984A | 1984-09-27 | 1984-09-27 | |
| US655109 | 1996-05-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6184867A true JPS6184867A (ja) | 1986-04-30 |
Family
ID=24627549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60214398A Pending JPS6184867A (ja) | 1984-09-27 | 1985-09-26 | Ｉｇｆｅｔの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS6184867A (fr) |
| DE (1) | DE3533808A1 (fr) |
| FR (1) | FR2570880A1 (fr) |
| GB (1) | GB2165091B (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01181571A (ja) * | 1988-01-11 | 1989-07-19 | Nippon Denso Co Ltd | 導電変調型ｍｏｓｆｅｔ |
| JPH01235277A (ja) * | 1988-03-15 | 1989-09-20 | Nec Corp | 縦型電界効果トランジスタ |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2193597A (en) * | 1986-08-08 | 1988-02-10 | Philips Electronic Associated | Method of manufacturing a vertical DMOS transistor |
| JPS63302535A (ja) * | 1987-06-03 | 1988-12-09 | Mitsubishi Electric Corp | ガリウム砒素集積回路 |
| JP2510710B2 (ja) * | 1988-12-13 | 1996-06-26 | 三菱電機株式会社 | 絶縁体基板上の半導体層に形成されたｍｏｓ型電界効果トランジスタ |
| KR20100135521A (ko) * | 2009-06-17 | 2010-12-27 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| CN106206300A (zh) * | 2015-04-29 | 2016-12-07 | 北大方正集团有限公司 | 垂直双扩散金属-氧化物半导体场效应晶体管及加工方法 |
| CN109817707A (zh) * | 2019-01-15 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | Rc-igbt结构及其制造方法 |
| CN117238969A (zh) * | 2023-11-13 | 2023-12-15 | 深圳基本半导体有限公司 | 碳化硅mosfet器件及其制备方法与应用 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363983A (en) * | 1976-11-19 | 1978-06-07 | Toshiba Corp | Semiconductor device |
| JPS543480A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE2930780C2 (de) * | 1979-07-28 | 1982-05-27 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Verfahren zur Herstellung eines VMOS-Transistors |
| DE3240162C2 (de) * | 1982-01-04 | 1996-08-01 | Gen Electric | Verfahren zum Herstellen eines doppelt-diffundierten Leistungs-MOSFET mit Source-Basis-Kurzschluß |
| US4503598A (en) * | 1982-05-20 | 1985-03-12 | Fairchild Camera & Instrument Corporation | Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques |
| JPS5957477A (ja) * | 1982-09-27 | 1984-04-03 | Fujitsu Ltd | 半導体装置 |
| CA1216968A (fr) * | 1983-09-06 | 1987-01-20 | Victor A.K. Temple | Dispositif a semiconducteur a grille isolee a court-circuit base-source ameliore et methode de fabrication de ce court-circuit |
-
1985
- 1985-09-19 FR FR8513907A patent/FR2570880A1/fr active Pending
- 1985-09-21 DE DE19853533808 patent/DE3533808A1/de not_active Withdrawn
- 1985-09-25 GB GB08523651A patent/GB2165091B/en not_active Expired
- 1985-09-26 JP JP60214398A patent/JPS6184867A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01181571A (ja) * | 1988-01-11 | 1989-07-19 | Nippon Denso Co Ltd | 導電変調型ｍｏｓｆｅｔ |
| JPH01235277A (ja) * | 1988-03-15 | 1989-09-20 | Nec Corp | 縦型電界効果トランジスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8523651D0 (en) | 1985-10-30 |
| GB2165091B (en) | 1988-04-20 |
| FR2570880A1 (fr) | 1986-03-28 |
| GB2165091A (en) | 1986-04-03 |
| DE3533808A1 (de) | 1986-04-03 |
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