GB8523651D0 - Igfet - Google Patents

Igfet

Info

Publication number
GB8523651D0
GB8523651D0 GB858523651A GB8523651A GB8523651D0 GB 8523651 D0 GB8523651 D0 GB 8523651D0 GB 858523651 A GB858523651 A GB 858523651A GB 8523651 A GB8523651 A GB 8523651A GB 8523651 D0 GB8523651 D0 GB 8523651D0
Authority
GB
United Kingdom
Prior art keywords
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB858523651A
Other versions
GB2165091B (en
GB2165091A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB8523651D0 publication Critical patent/GB8523651D0/en
Publication of GB2165091A publication Critical patent/GB2165091A/en
Application granted granted Critical
Publication of GB2165091B publication Critical patent/GB2165091B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
GB08523651A 1984-09-27 1985-09-25 Igfet and method for fabricating same Expired GB2165091B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65510984A 1984-09-27 1984-09-27

Publications (3)

Publication Number Publication Date
GB8523651D0 true GB8523651D0 (en) 1985-10-30
GB2165091A GB2165091A (en) 1986-04-03
GB2165091B GB2165091B (en) 1988-04-20

Family

ID=24627549

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08523651A Expired GB2165091B (en) 1984-09-27 1985-09-25 Igfet and method for fabricating same

Country Status (4)

Country Link
JP (1) JPS6184867A (en)
DE (1) DE3533808A1 (en)
FR (1) FR2570880A1 (en)
GB (1) GB2165091B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117238969A (en) * 2023-11-13 2023-12-15 深圳基本半导体有限公司 Silicon carbide MOSFET device and preparation method and application thereof

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2193597A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated Method of manufacturing a vertical DMOS transistor
JPS63302535A (en) * 1987-06-03 1988-12-09 Mitsubishi Electric Corp Gallium arsenide integrated circuit
JP2526960B2 (en) * 1988-01-11 1996-08-21 日本電装株式会社 Conduction modulation type MOSFET
JPH01235277A (en) * 1988-03-15 1989-09-20 Nec Corp Vertical field-effect transistor
JP2510710B2 (en) * 1988-12-13 1996-06-26 三菱電機株式会社 MOS field effect transistor formed in semiconductor layer on insulator substrate
KR20100135521A (en) * 2009-06-17 2010-12-27 주식회사 하이닉스반도체 Semiconductor device and method for manufacturing the same
CN106206300A (en) * 2015-04-29 2016-12-07 北大方正集团有限公司 Vertical double diffused metal-oxide semiconductor field effect transistor and processing method
CN109817707A (en) * 2019-01-15 2019-05-28 上海华虹宏力半导体制造有限公司 RC-IGBT structure and its manufacturing method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363983A (en) * 1976-11-19 1978-06-07 Toshiba Corp Semiconductor device
JPS543480A (en) * 1977-06-09 1979-01-11 Fujitsu Ltd Manufacture of semiconductor device
DE2930780C2 (en) * 1979-07-28 1982-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Method of manufacturing a VMOS transistor
DE3240162C2 (en) * 1982-01-04 1996-08-01 Gen Electric Method of fabricating a double-diffused source-based short-circuit power MOSFET
US4503598A (en) * 1982-05-20 1985-03-12 Fairchild Camera & Instrument Corporation Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques
JPS5957477A (en) * 1982-09-27 1984-04-03 Fujitsu Ltd Semiconductor device
CA1216968A (en) * 1983-09-06 1987-01-20 Victor A.K. Temple Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117238969A (en) * 2023-11-13 2023-12-15 深圳基本半导体有限公司 Silicon carbide MOSFET device and preparation method and application thereof

Also Published As

Publication number Publication date
JPS6184867A (en) 1986-04-30
DE3533808A1 (en) 1986-04-03
GB2165091B (en) 1988-04-20
GB2165091A (en) 1986-04-03
FR2570880A1 (en) 1986-03-28

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee