GB2165091B - Igfet and method for fabricating same - Google Patents
Igfet and method for fabricating sameInfo
- Publication number
- GB2165091B GB2165091B GB08523651A GB8523651A GB2165091B GB 2165091 B GB2165091 B GB 2165091B GB 08523651 A GB08523651 A GB 08523651A GB 8523651 A GB8523651 A GB 8523651A GB 2165091 B GB2165091 B GB 2165091B
- Authority
- GB
- United Kingdom
- Prior art keywords
- igfet
- fabricating same
- fabricating
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65510984A | 1984-09-27 | 1984-09-27 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8523651D0 GB8523651D0 (en) | 1985-10-30 |
| GB2165091A GB2165091A (en) | 1986-04-03 |
| GB2165091B true GB2165091B (en) | 1988-04-20 |
Family
ID=24627549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08523651A Expired GB2165091B (en) | 1984-09-27 | 1985-09-25 | Igfet and method for fabricating same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS6184867A (en) |
| DE (1) | DE3533808A1 (en) |
| FR (1) | FR2570880A1 (en) |
| GB (1) | GB2165091B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2193597A (en) * | 1986-08-08 | 1988-02-10 | Philips Electronic Associated | Method of manufacturing a vertical DMOS transistor |
| JPS63302535A (en) * | 1987-06-03 | 1988-12-09 | Mitsubishi Electric Corp | Gallium arsenide integrated circuit |
| JP2526960B2 (en) * | 1988-01-11 | 1996-08-21 | 日本電装株式会社 | Conduction modulation type MOSFET |
| JPH01235277A (en) * | 1988-03-15 | 1989-09-20 | Nec Corp | Vertical field-effect transistor |
| JP2510710B2 (en) * | 1988-12-13 | 1996-06-26 | 三菱電機株式会社 | MOS field effect transistor formed in semiconductor layer on insulator substrate |
| KR20100135521A (en) * | 2009-06-17 | 2010-12-27 | 주식회사 하이닉스반도체 | Semiconductor device and method for manufacturing the same |
| CN106206300A (en) * | 2015-04-29 | 2016-12-07 | 北大方正集团有限公司 | Vertical double diffused metal-oxide semiconductor field effect transistor and processing method |
| CN109817707A (en) * | 2019-01-15 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | RC-IGBT structure and its manufacturing method |
| CN117238969A (en) * | 2023-11-13 | 2023-12-15 | 深圳基本半导体有限公司 | Silicon carbide MOSFET device and preparation method and application thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5363983A (en) * | 1976-11-19 | 1978-06-07 | Toshiba Corp | Semiconductor device |
| JPS543480A (en) * | 1977-06-09 | 1979-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE2930780C2 (en) * | 1979-07-28 | 1982-05-27 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Method of manufacturing a VMOS transistor |
| DE3240162C2 (en) * | 1982-01-04 | 1996-08-01 | Gen Electric | Method of fabricating a double-diffused source-based short-circuit power MOSFET |
| US4503598A (en) * | 1982-05-20 | 1985-03-12 | Fairchild Camera & Instrument Corporation | Method of fabricating power MOSFET structure utilizing self-aligned diffusion and etching techniques |
| JPS5957477A (en) * | 1982-09-27 | 1984-04-03 | Fujitsu Ltd | Semiconductor device |
| CA1216968A (en) * | 1983-09-06 | 1987-01-20 | Victor A.K. Temple | Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short |
-
1985
- 1985-09-19 FR FR8513907A patent/FR2570880A1/en active Pending
- 1985-09-21 DE DE19853533808 patent/DE3533808A1/en not_active Withdrawn
- 1985-09-25 GB GB08523651A patent/GB2165091B/en not_active Expired
- 1985-09-26 JP JP60214398A patent/JPS6184867A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2570880A1 (en) | 1986-03-28 |
| DE3533808A1 (en) | 1986-04-03 |
| JPS6184867A (en) | 1986-04-30 |
| GB2165091A (en) | 1986-04-03 |
| GB8523651D0 (en) | 1985-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |