JPS6184018A - Ｘ線露光装置 - Google Patents

Ｘ線露光装置

Info

Publication number
JPS6184018A
JPS6184018A JP59204160A JP20416084A JPS6184018A JP S6184018 A JPS6184018 A JP S6184018A JP 59204160 A JP59204160 A JP 59204160A JP 20416084 A JP20416084 A JP 20416084A JP S6184018 A JPS6184018 A JP S6184018A
Authority
JP
Japan
Prior art keywords
mask
wafer
gap
transfer
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59204160A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564452B2 (cs
Inventor
Yoshihiro Yoneyama
米山　義弘
Yukio Kenbo
行雄 見坊
Akira Inagaki
晃 稲垣
Minoru Ikeda
稔 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59204160A priority Critical patent/JPS6184018A/ja
Publication of JPS6184018A publication Critical patent/JPS6184018A/ja
Publication of JPH0564452B2 publication Critical patent/JPH0564452B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59204160A 1984-10-01 1984-10-01 Ｘ線露光装置 Granted JPS6184018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59204160A JPS6184018A (ja) 1984-10-01 1984-10-01 Ｘ線露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59204160A JPS6184018A (ja) 1984-10-01 1984-10-01 Ｘ線露光装置

Publications (2)

Publication Number Publication Date
JPS6184018A true JPS6184018A (ja) 1986-04-28
JPH0564452B2 JPH0564452B2 (cs) 1993-09-14

Family

ID=16485826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59204160A Granted JPS6184018A (ja) 1984-10-01 1984-10-01 Ｘ線露光装置

Country Status (1)

Country Link
JP (1) JPS6184018A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443932A (en) * 1988-09-30 1995-08-22 Canon Kabushiki Kaisha Exposure method
JP2011102834A (ja) * 2009-11-10 2011-05-26 Toppan Printing Co Ltd 基板露光装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219735A (ja) * 1982-06-16 1983-12-21 Hitachi Ltd ステップアンドリピート方式のプロキシミティ露光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219735A (ja) * 1982-06-16 1983-12-21 Hitachi Ltd ステップアンドリピート方式のプロキシミティ露光装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443932A (en) * 1988-09-30 1995-08-22 Canon Kabushiki Kaisha Exposure method
EP0361934B1 (en) * 1988-09-30 1998-11-25 Canon Kabushiki Kaisha Exposure method
JP2011102834A (ja) * 2009-11-10 2011-05-26 Toppan Printing Co Ltd 基板露光装置

Also Published As

Publication number Publication date
JPH0564452B2 (cs) 1993-09-14

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