JPS6169171A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS6169171A
JPS6169171A JP60181701A JP18170185A JPS6169171A JP S6169171 A JPS6169171 A JP S6169171A JP 60181701 A JP60181701 A JP 60181701A JP 18170185 A JP18170185 A JP 18170185A JP S6169171 A JPS6169171 A JP S6169171A
Authority
JP
Japan
Prior art keywords
substrate
type
solid
imaging device
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60181701A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0227820B2 (enExample
Inventor
Kayao Takemoto
一八男 竹本
Shinya Oba
大場　信彌
Masakazu Aoki
正和 青木
Seiji Kubo
征治 久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60181701A priority Critical patent/JPS6169171A/ja
Publication of JPS6169171A publication Critical patent/JPS6169171A/ja
Publication of JPH0227820B2 publication Critical patent/JPH0227820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP60181701A 1985-08-21 1985-08-21 固体撮像装置 Granted JPS6169171A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60181701A JPS6169171A (ja) 1985-08-21 1985-08-21 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60181701A JPS6169171A (ja) 1985-08-21 1985-08-21 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS6169171A true JPS6169171A (ja) 1986-04-09
JPH0227820B2 JPH0227820B2 (enExample) 1990-06-20

Family

ID=16105345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60181701A Granted JPS6169171A (ja) 1985-08-21 1985-08-21 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS6169171A (enExample)

Also Published As

Publication number Publication date
JPH0227820B2 (enExample) 1990-06-20

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