JPS6165441A - プラズマ窒化シリコン絶縁膜の処理方法 - Google Patents

プラズマ窒化シリコン絶縁膜の処理方法

Info

Publication number
JPS6165441A
JPS6165441A JP59188424A JP18842484A JPS6165441A JP S6165441 A JPS6165441 A JP S6165441A JP 59188424 A JP59188424 A JP 59188424A JP 18842484 A JP18842484 A JP 18842484A JP S6165441 A JPS6165441 A JP S6165441A
Authority
JP
Japan
Prior art keywords
silicon nitride
insulating film
plasma silicon
nitride insulating
processing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59188424A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329297B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Sunao Nishioka
西岡　直
Hiroshi Koyama
浩 小山
Yoji Masuko
益子　洋治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59188424A priority Critical patent/JPS6165441A/ja
Priority to US06/773,918 priority patent/US4636400A/en
Publication of JPS6165441A publication Critical patent/JPS6165441A/ja
Publication of JPH0329297B2 publication Critical patent/JPH0329297B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP59188424A 1984-09-07 1984-09-07 プラズマ窒化シリコン絶縁膜の処理方法 Granted JPS6165441A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59188424A JPS6165441A (ja) 1984-09-07 1984-09-07 プラズマ窒化シリコン絶縁膜の処理方法
US06/773,918 US4636400A (en) 1984-09-07 1985-09-09 Method of treating silicon nitride film formed by plasma deposition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59188424A JPS6165441A (ja) 1984-09-07 1984-09-07 プラズマ窒化シリコン絶縁膜の処理方法

Publications (2)

Publication Number Publication Date
JPS6165441A true JPS6165441A (ja) 1986-04-04
JPH0329297B2 JPH0329297B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-23

Family

ID=16223424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59188424A Granted JPS6165441A (ja) 1984-09-07 1984-09-07 プラズマ窒化シリコン絶縁膜の処理方法

Country Status (2)

Country Link
US (1) US4636400A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6165441A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307745A (ja) * 1987-06-09 1988-12-15 Sanyo Electric Co Ltd 窒化シリコン膜の製造方法
JPH02122528A (ja) * 1988-10-31 1990-05-10 Sony Corp 半導体素子の製法
US5312771A (en) * 1990-03-24 1994-05-17 Canon Kabushiki Kaisha Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer
JP2007189533A (ja) * 2006-01-13 2007-07-26 Canon Inc 撮像装置、当該装置の制御方法及び制御プログラム
JP2010517307A (ja) * 2007-01-24 2010-05-20 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体キャップ層

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910043A (en) * 1987-07-16 1990-03-20 Texas Instruments Incorporated Processing apparatus and method
US4933206A (en) * 1988-08-17 1990-06-12 Intel Corporation UV-vis characteristic writing in silicon nitride and oxynitride films
US5013692A (en) * 1988-12-08 1991-05-07 Sharp Kabushiki Kaisha Process for preparing a silicon nitride insulating film for semiconductor memory device
US4962065A (en) * 1989-02-13 1990-10-09 The University Of Arkansas Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
US5264724A (en) * 1989-02-13 1993-11-23 The University Of Arkansas Silicon nitride for application as the gate dielectric in MOS devices
US6274510B1 (en) 1998-07-15 2001-08-14 Texas Instruments Incorporated Lower temperature method for forming high quality silicon-nitrogen dielectrics
CN102652936B (zh) * 2012-04-26 2013-12-25 友达光电（苏州）有限公司 光固化方法与光固化装置
US10191215B2 (en) 2015-05-05 2019-01-29 Ecole Polytechnique Federale De Lausanne (Epfl) Waveguide fabrication method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497388A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-05-11 1974-01-23

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4181751A (en) * 1978-05-24 1980-01-01 Hughes Aircraft Company Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition
US4229502A (en) * 1979-08-10 1980-10-21 Rca Corporation Low-resistivity polycrystalline silicon film
US4277320A (en) * 1979-10-01 1981-07-07 Rockwell International Corporation Process for direct thermal nitridation of silicon semiconductor devices
US4469715A (en) * 1981-02-13 1984-09-04 Energy Conversion Devices, Inc. P-type semiconductor material having a wide band gap
JPS5958819A (ja) * 1982-09-29 1984-04-04 Hitachi Ltd 薄膜形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497388A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-05-11 1974-01-23

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307745A (ja) * 1987-06-09 1988-12-15 Sanyo Electric Co Ltd 窒化シリコン膜の製造方法
JPH02122528A (ja) * 1988-10-31 1990-05-10 Sony Corp 半導体素子の製法
US5312771A (en) * 1990-03-24 1994-05-17 Canon Kabushiki Kaisha Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer
JP2007189533A (ja) * 2006-01-13 2007-07-26 Canon Inc 撮像装置、当該装置の制御方法及び制御プログラム
JP2010517307A (ja) * 2007-01-24 2010-05-20 インターナショナル・ビジネス・マシーンズ・コーポレーション 誘電体キャップ層

Also Published As

Publication number Publication date
JPH0329297B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-23
US4636400A (en) 1987-01-13

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