JPS6163044A - 銀めつき導体 - Google Patents

銀めつき導体

Info

Publication number
JPS6163044A
JPS6163044A JP59184252A JP18425284A JPS6163044A JP S6163044 A JPS6163044 A JP S6163044A JP 59184252 A JP59184252 A JP 59184252A JP 18425284 A JP18425284 A JP 18425284A JP S6163044 A JPS6163044 A JP S6163044A
Authority
JP
Japan
Prior art keywords
copper
plated layer
silver
conductor
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59184252A
Other languages
English (en)
Other versions
JPH0123947B2 (ja
Inventor
Norio Okabe
則夫 岡部
Osamu Yoshioka
修 吉岡
Ryozo Yamagishi
山岸　良三
Sadao Nagayama
長山　定夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP59184252A priority Critical patent/JPS6163044A/ja
Publication of JPS6163044A publication Critical patent/JPS6163044A/ja
Publication of JPH0123947B2 publication Critical patent/JPH0123947B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、電子部品用り−Ｐ線またはリードフレーム等
に用いられる銀めっきを施した導体に関する。
従来の技術 従来、各種電子部品に用いられるり−ｒｓｔたはＩＪ　
　ｈ”−フレームには、目的に応じて銅導体表面に種々
のめっきを施したものが利用されている。
中でも、第２図にその断面図を示すように、銅導体ｌの
表面に銀めつき２を施した導体は耐酸化性に優れ、自然
酸化や高温酸化においても酸化皮膜が生成しにぐいとい
う特長があることから、他のめつき導体に比べ優れた半
田付性および電気特性を示し、信頼性の要求される分野
において広く使用されている。
しかし、銀めっき層が薄いと、酸化雰囲気での加熱処理
によって酸素は銀めっきを透過し易く、銀めっき層のピ
ンホールや結晶粒界等を介して素地の銅が銀めっき層の
表面に拡散するので、銅は酸化されて銅と銀めっきとの
界面に酸化皮膜が生成してしまう。このような現象は、
伸線や圧延などの加工により欠陥や加工変質層を有する
銅導体を素材とした場合に特に顕著に現われる。これは
銀めっきの電析組織が素地の表面状態に左右され易いの
でピンホール等の欠陥が生成し易く、さらにめっき結晶
が不均一となるので、加熱処理時の銀−銅界面での熱拡
散も不均一になるからである。
発明が解決しようとする問題点 そこで本発明の目的は、従来の問題点を解消し、熱処理
によっても銅と銀めっきとの界面に酸化皮膜が生ずるこ
となく、半田付性が良好な安価で製造できる銀めっき導
体を提供することにある。
問題点を解決するための手段および作用本発明は、銅ま
たは銅合金よりなる導体の全面に少なくとも０．５μの
厚さの光沢銅めっき層を設け、さらに該銅めつき層の全
面に銀めっき層を設けてなることを特徴とする銀めっき
導体である。
光沢鋼めっきは素地の銅導体の欠陥を保障し、銅めっき
上に設けられる銀めっきの結晶を緻密かつ均一な欠陥の
ないものにするとともに、銀めっきの密着性を高める作
用を成す。そして加熱処理時に銀−銅界面に均一な拡散
合金属を形成せしめることにより、半田付性低下の原因
となる不連続な銅の酸化膜の生成を防止する。
このようなことから、光沢銅めっきとしては微細結晶で
均一な平滑めっきの得られるものであればよぐ、めっき
浴の種類（硫酸銅浴、シアン化銅浴、ビロリン酸銅浴な
ど）や光沢剤の種類および電解方法（直流、ＰＲ法、交
流併用法）など、その製造方法には制限されない。
実施例 以下、図面に基づいて本発明の詳細な説明する。
実施例１ 第３図に示す形状のＩＣ用リードフレーム（錫入銅、厚
さ０．２５　ｒｔａｎ　）を用意し、アルカリ電解脱脂
および希硫酸洗浄を行なった後、光沢硫酸銅めっき浴（
ＣｕＳＯ４２００ｙ／　１１、Ｈ２ＳＯ４３０ｍｅ／　
Ｑ、荏原ニーシライト（株）社製光沢剤ニー・Ｚツク＃
１ｓ　ａｔ／　ｎ　）を用いて、室温、電流密度５Ａ／
ｄｍ２　の条件で光沢銅めっき下地を００．２〜２．０
μの厚さで設ける。さらにその上に銀ストライクめっき
（ＡｇＣＮ　５　ｐ／ｎ、ＫＣＮ７０り／２、室温、電
流密度４Ａ／ｄｍ２×５秒）および銀めっき（ＡｇＣＮ
　４０７／Ｉ、、ＫＣＮ　１００　ｙ／１．、ＫｚＣＯ
３２０ｐ　／　Ｉｌ　、室温、電流密度２　Ａ／ｄｍ２
）を３μおよび５μの厚さで設けた銀めっきり一１フレ
ームを作成した。第１図にその断面図を示してあり、１
は銅導体、２は光沢銅めっき、３は銀めっきである。
そしてこの銀めっきリードフレームと第２図に示した構
造の従来の銀めっきリードフレームの、加熱処理後の半
田付性を調べた結果を第１表に示した。ことで加熱処理
は空気恒温槽により３５０℃×５分の条件で行ない、Ｍ
ＩＬＳＴＤ２０２Ｄ２０８Ｂの試験方法に準拠してアラ
ターリ−ｒｓの半田付性を評価した。なお、試料は半田
付前にロジンフラックスを塗布し、半田付性の判定は半
田のぬれ面積の比率で行なった。
Ｋ１表 上記表から゛も明らかなように、光沢銅めっき下地を設
けることにより半田付性が向上し、特に０．５μ以上の
厚さで設けた場合には銀めっき厚を薄くしても良好な半
田付性を示すことがわかる。
実施例２ 直径０．８　ｍの純銅導線を素材とし、光沢シアン化鋼
めっき浴（ＣｕＣＮ　７０　ｙ／　ｎ　、遊離ＮａＣＮ
１３）／２、ロダンカリ１５ｙ／Ｉｔ、ロツセル塩２０
ｙ／ｎ、実計製薬（株）社製光沢剤ニューレアＣＲ−１
０，８ｄ／ｎ、ＣＲ−２１ｔｄ／Ｉｔ、ＰＨ１２，８）
を用いて６０℃、ＰＲ電解法（平均電流密度３Ａ／ｄｍ
２、ＰＲ比１５：３）により光沢銅めっき下地を設けた
後、実施例１と同様の方法で銀めっきを設は銀めっきリ
ード線を作成した。この断面図を第４図に示してあシ、
８は銅導線、２は光沢銅めっき、３は銀めっきである。
このリード線の加熱処理後の半田付性を調べた結果、実
施例１で得られた結果と同様に良好な半田付特性が得ら
れた。
なお本発明は上記実施例に限定されるものではな（、例
えば銀めっきの耐熱性や耐変色性を向上させるために銀
めっきを光沢化する等、目的に応じて他の処理を組み合
わせて施すことも可能であ発明の詳細 な説明したように、本発明によれば銀めっき厚を薄くし
ても加熱処理後の半田特性の低下がなく信頼性の高い銀
めっき導体を得ることができ、さらに銀の使用量が少な
いので低コストで装造できるという効果がある。
【図面の簡単な説明】
第１図は本発明の一実施例である銀めっきす＋１フレー
ムの断面図、第２図は従来の銀めっき導体の断面図、第
３図はＩ　Ｃ’Ｊ−１’フレームの平面図、第４図は本
発明の他の実施例である銀めっきり−ド線の断面図であ
る。 図中符号 １　・・銅導体、２・・・・・光沢銅めっき、３・・・
・・・銀めっき、４・・・・・・リードフレーム、５・
・・・・アラターリ−１，６・・・・・インナーリード
、７・・・・・タブ、８・・・・・・銅導線。 第　１図　　　　　　　　鴇　２　日 系　３図 革　４　ｚ

Claims (1)

    【特許請求の範囲】
  1. 　銅または銅合金よりなる導体の全面に少なくとも０．
    ５μの厚さの光沢銅めつき層を設け、さらに該銅めつき
    層の全面に銀めつき層を設けてなることを特徴とする銀
    めつき導体。
JP59184252A 1984-09-03 1984-09-03 銀めつき導体 Granted JPS6163044A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59184252A JPS6163044A (ja) 1984-09-03 1984-09-03 銀めつき導体

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59184252A JPS6163044A (ja) 1984-09-03 1984-09-03 銀めつき導体

Publications (2)

Publication Number Publication Date
JPS6163044A true JPS6163044A (ja) 1986-04-01
JPH0123947B2 JPH0123947B2 (ja) 1989-05-09

Family

ID=16150053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59184252A Granted JPS6163044A (ja) 1984-09-03 1984-09-03 銀めつき導体

Country Status (1)

Country Link
JP (1) JPS6163044A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03274756A (ja) * 1990-03-23 1991-12-05 Sharp Corp 固体撮像素子およびその製造方法
US6034422A (en) * 1995-09-29 2000-03-07 Dai Nippon Printing Co., Ltd. Lead frame, method for partial noble plating of said lead frame and semiconductor device having said lead frame

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101929169B1 (ko) 2010-08-31 2018-12-13 쓰리엠 이노베이티브 프로퍼티즈 컴파니 쌍축 구성의 차폐 전기 케이블
WO2012030365A1 (en) 2010-08-31 2012-03-08 3M Innovative Properties Company High density shielded electrical cable and other shielded cables, systems, and methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03274756A (ja) * 1990-03-23 1991-12-05 Sharp Corp 固体撮像素子およびその製造方法
US6034422A (en) * 1995-09-29 2000-03-07 Dai Nippon Printing Co., Ltd. Lead frame, method for partial noble plating of said lead frame and semiconductor device having said lead frame

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JPH0123947B2 (ja) 1989-05-09

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