JPS6161375B2 - - Google Patents
Info
- Publication number
- JPS6161375B2 JPS6161375B2 JP8059880A JP8059880A JPS6161375B2 JP S6161375 B2 JPS6161375 B2 JP S6161375B2 JP 8059880 A JP8059880 A JP 8059880A JP 8059880 A JP8059880 A JP 8059880A JP S6161375 B2 JPS6161375 B2 JP S6161375B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- photomask
- photosensitive resin
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000000872 buffer Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8059880A JPS576849A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8059880A JPS576849A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS576849A JPS576849A (en) | 1982-01-13 |
| JPS6161375B2 true JPS6161375B2 (enrdf_load_stackoverflow) | 1986-12-25 |
Family
ID=13722757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8059880A Granted JPS576849A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS576849A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2530833B2 (ja) * | 1987-02-07 | 1996-09-04 | 株式会社日立製作所 | ホトレジストパタ―ンの形成方法 |
| JP2710967B2 (ja) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
| JP2566048B2 (ja) * | 1990-04-19 | 1996-12-25 | シャープ株式会社 | 光露光用マスク及びその製造方法 |
| JP4977535B2 (ja) * | 2007-06-15 | 2012-07-18 | 信越化学工業株式会社 | パターン転写方法 |
| JP2008310092A (ja) * | 2007-06-15 | 2008-12-25 | Shin Etsu Chem Co Ltd | フォトマスク |
| JP4977794B2 (ja) * | 2011-09-21 | 2012-07-18 | 信越化学工業株式会社 | パターン転写方法およびフォトマスク |
-
1980
- 1980-06-13 JP JP8059880A patent/JPS576849A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS576849A (en) | 1982-01-13 |
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